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N306AS-VB Product details
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**N306AS-VB Product Introduction**
N306AS-VB is a **single N-channel MOSFET**, which adopts **TO263 package** and is suitable for use in compact circuit design. Its **drain-source voltage (VDS) is 30V**, which enables it to handle moderate voltage applications, and **gate voltage (VGS) is ±20V**, providing flexible driving options. **The threshold voltage (Vth) is 1.7V**, which can be effectively turned on at a lower gate voltage. The device has an on-resistance (RDS(ON)) of 2.7mΩ** at **VGS=4.5V, and 2.4mΩ** at **VGS=10V, ensuring extremely low conduction losses. This performance enables the N306AS-VB to support drain currents (ID) up to **98A**, which is suitable for applications requiring high power. The N306AS-VB with **Trench technology** not only improves switching efficiency, but also reduces heat dissipation, making it an ideal choice for various power management and drive circuits.
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N306AS-VB is a **single N-channel MOSFET**, which adopts **TO263 package** and is suitable for use in compact circuit design. Its **drain-source voltage (VDS) is 30V**, which enables it to handle moderate voltage applications, and **gate voltage (VGS) is ±20V**, providing flexible driving options. **The threshold voltage (Vth) is 1.7V**, which can be effectively turned on at a lower gate voltage. The device has an on-resistance (RDS(ON)) of 2.7mΩ** at **VGS=4.5V, and 2.4mΩ** at **VGS=10V, ensuring extremely low conduction losses. This performance enables the N306AS-VB to support drain currents (ID) up to **98A**, which is suitable for applications requiring high power. The N306AS-VB with **Trench technology** not only improves switching efficiency, but also reduces heat dissipation, making it an ideal choice for various power management and drive circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
**N306AS-VB Parameter Description**
| **Parameter** | **Value** | **Description** |
|--------------------------|-------------------------|----------------------------------------|
| **Package Type** | TO263 | Compact surface mount package, suitable for circuit design with limited space|
| **Channel Type** | Single N-channel (Single-N) | Suitable for common power switches and load drivers|
| **VDS (drain-source voltage)** | 30V | Suitable for low and medium voltage power applications|
| **VGS (gate voltage)** | ±20V | Provides flexible gate drive options|
| **Vth (threshold voltage)** | 1.7V | Minimum gate voltage for MOSFET to turn on|
| **RDS(ON)** | 2.7mΩ @ VGS=4.5V | On-resistance at 4.5V gate voltage|
| **RDS(ON)** | 2.4mΩ @ VGS=10V | On-resistance at 10V gate voltage|
| **ID (drain current)** | 98A | Maximum drain current|
| **Technology** | Trench | Trench technology optimizes conduction performance and power loss|
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| **Parameter** | **Value** | **Description** |
|--------------------------|-------------------------|----------------------------------------|
| **Package Type** | TO263 | Compact surface mount package, suitable for circuit design with limited space|
| **Channel Type** | Single N-channel (Single-N) | Suitable for common power switches and load drivers|
| **VDS (drain-source voltage)** | 30V | Suitable for low and medium voltage power applications|
| **VGS (gate voltage)** | ±20V | Provides flexible gate drive options|
| **Vth (threshold voltage)** | 1.7V | Minimum gate voltage for MOSFET to turn on|
| **RDS(ON)** | 2.7mΩ @ VGS=4.5V | On-resistance at 4.5V gate voltage|
| **RDS(ON)** | 2.4mΩ @ VGS=10V | On-resistance at 10V gate voltage|
| **ID (drain current)** | 98A | Maximum drain current|
| **Technology** | Trench | Trench technology optimizes conduction performance and power loss|
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Domain and module applications：
**Application fields and applicable modules**
1. **Power management system**
N306AS-VB plays a key role in various **power management modules**, such as DC-DC converters and high-efficiency regulators. Due to its ultra-low RDS(ON) characteristics, it is able to reduce power consumption during the conversion process and improve overall efficiency, especially in mobile devices and portable power devices.
2. **Motor drive**
This MOSFET is suitable for **motor drive circuits**, such as the control of DC motors and stepper motors. N306AS-VB is able to provide up to 98A of current, ensuring that the motor has sufficient drive capability during startup and load changes, and is widely used in industrial automation and robotics.
3. **Switching power supply and adapter**
In **switching power supply** and adapter designs, N306AS-VB can be used as an efficient switching element to handle voltage conversion between input and output. Due to its lower conduction loss, it is able to improve power conversion efficiency and reduce heat generation, suitable for high-density power modules.
4. **LED driver circuit**
This MOSFET is also an ideal choice in **LED driver circuit**, which can effectively control the brightness of LEDs at lower voltages. Its high current handling capability and low on-resistance enable efficient driving in various lighting applications.
5. **Smart home and IoT devices**
In **smart home** and **Internet of Things (IoT) devices**, the N306AS-VB can be used as a load switch to control the power supply. Its low power consumption makes it ideal for devices that need to run for a long time and are sensitive to energy consumption, such as sensors and smart sockets.
Through these application examples, the N306AS-VB demonstrates its importance in power management and control systems, especially in electronic devices with high efficiency and high power requirements.
1. **Power management system**
N306AS-VB plays a key role in various **power management modules**, such as DC-DC converters and high-efficiency regulators. Due to its ultra-low RDS(ON) characteristics, it is able to reduce power consumption during the conversion process and improve overall efficiency, especially in mobile devices and portable power devices.
2. **Motor drive**
This MOSFET is suitable for **motor drive circuits**, such as the control of DC motors and stepper motors. N306AS-VB is able to provide up to 98A of current, ensuring that the motor has sufficient drive capability during startup and load changes, and is widely used in industrial automation and robotics.
3. **Switching power supply and adapter**
In **switching power supply** and adapter designs, N306AS-VB can be used as an efficient switching element to handle voltage conversion between input and output. Due to its lower conduction loss, it is able to improve power conversion efficiency and reduce heat generation, suitable for high-density power modules.
4. **LED driver circuit**
This MOSFET is also an ideal choice in **LED driver circuit**, which can effectively control the brightness of LEDs at lower voltages. Its high current handling capability and low on-resistance enable efficient driving in various lighting applications.
5. **Smart home and IoT devices**
In **smart home** and **Internet of Things (IoT) devices**, the N306AS-VB can be used as a load switch to control the power supply. Its low power consumption makes it ideal for devices that need to run for a long time and are sensitive to energy consumption, such as sensors and smart sockets.
Through these application examples, the N306AS-VB demonstrates its importance in power management and control systems, especially in electronic devices with high efficiency and high power requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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