N303AS-VB TO263 Product details
Product introduction:
**N303AS-VB** is a single N-channel MOSFET in **TO263** package with low on-resistance and high current carrying capacity, designed for low-voltage and high-current applications. Its drain-source voltage (VDS) is **30V**, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) is **1.7V**. The on-resistance of the device is **3.2mΩ** at VGS = 4.5V and only **2.3mΩ** at VGS = 10V, and it can carry a high drain current of **150A**. With **Trench technology**, N303AS-VB can achieve fast switching and extremely low conduction losses, making it ideal for high-efficiency power conversion and current control applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Model**: N303AS-VB
- **Package type**: TO263
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 3.2mΩ
- @ VGS = 10V: 2.3mΩ
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
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Domain and module applications:
**N303AS-VB**’s low on-resistance and high current capability make it widely used in a variety of power and electronic applications, including:
1. **Server and data center power management**
N303AS-VB is ideal for server power modules and data center power distribution systems. Its low on-resistance and high current capability ensure efficient load management, reduce energy loss and improve system reliability.
2. **Electric vehicle and charging pile module**
In electric vehicle (EV) and charging pile applications, this MOSFET can be used in DC charging modules and battery management systems to provide efficient and fast power conversion for vehicles.
3. **DC-DC converter**
N303AS-VB is suitable for buck converters and power adapters, especially in high current applications, helping to achieve compact and efficient power design.
4. **Motor Drive and Industrial Control**
Its high current carrying capacity enables its application in industrial motor drive systems and intelligent control modules, such as inverters and power tools. It can provide stable power support and improve the durability and control performance of the equipment.
5. **High-Performance Computing and Graphics Processing Unit (GPU) Power Management**
In the field of high-performance computing and graphics processing, this MOSFET can be used in the power management circuits of GPUs and CPUs to support fast-response power distribution and reduce system heating.
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With its excellent electrical characteristics, the N303AS-VB is an ideal choice for a variety of high-current, low-voltage applications. In fields such as servers, electric vehicles, industrial control, and computing systems, this device can provide excellent performance and stability.
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