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N303AS-VB TO263 Product details

Product introduction:

Product Introduction

**N303AS-VB** is a single N-channel MOSFET in **TO263** package with low on-resistance and high current carrying capacity, designed for low-voltage and high-current applications. Its drain-source voltage (VDS) is **30V**, gate-source voltage (VGS) is ±20V, and threshold voltage (Vth) is **1.7V**. The on-resistance of the device is **3.2mΩ** at VGS = 4.5V and only **2.3mΩ** at VGS = 10V, and it can carry a high drain current of **150A**. With **Trench technology**, N303AS-VB can achieve fast switching and extremely low conduction losses, making it ideal for high-efficiency power conversion and current control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 30V 1.7V 150A 2.3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 30V 1.7V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 30V 1.7V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description

- **Model**: N303AS-VB
- **Package type**: TO263
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @ VGS = 4.5V: 3.2mΩ
- @ VGS = 10V: 2.3mΩ
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench

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Domain and module applications:

Applications and modules

**N303AS-VB**’s low on-resistance and high current capability make it widely used in a variety of power and electronic applications, including:

1. **Server and data center power management**
N303AS-VB is ideal for server power modules and data center power distribution systems. Its low on-resistance and high current capability ensure efficient load management, reduce energy loss and improve system reliability.

2. **Electric vehicle and charging pile module**
In electric vehicle (EV) and charging pile applications, this MOSFET can be used in DC charging modules and battery management systems to provide efficient and fast power conversion for vehicles.

3. **DC-DC converter**
N303AS-VB is suitable for buck converters and power adapters, especially in high current applications, helping to achieve compact and efficient power design.

4. **Motor Drive and Industrial Control**
Its high current carrying capacity enables its application in industrial motor drive systems and intelligent control modules, such as inverters and power tools. It can provide stable power support and improve the durability and control performance of the equipment.

5. **High-Performance Computing and Graphics Processing Unit (GPU) Power Management**
In the field of high-performance computing and graphics processing, this MOSFET can be used in the power management circuits of GPUs and CPUs to support fast-response power distribution and reduce system heating.

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With its excellent electrical characteristics, the N303AS-VB is an ideal choice for a variety of high-current, low-voltage applications. In fields such as servers, electric vehicles, industrial control, and computing systems, this device can provide excellent performance and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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