N1NF10-VB Product details
Product introduction:
N1NF10-VB is a high-efficiency single N-channel MOSFET in a SOT223 package, designed for medium voltage and medium current applications. Its maximum drain-source voltage (VDS) is 100V, suitable for a variety of power management and switching applications. The gate-source voltage (VGS) range of the device is ±20V, ensuring its stability in different operating environments. The threshold voltage (Vth) of N1NF10-VB is 1.8V, enabling it to be turned on at a lower gate-source voltage. Its low on-resistance (RDS(ON)) of 120mΩ (@VGS=4.5V) and 100mΩ (@VGS=10V) provides excellent conduction efficiency, making it ideal for use in applications requiring high efficiency and low power consumption.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 100V | 1.8V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
| Parameter | Value|
|----------------------|--------------------------|
| **Model** | N1NF10-VB |
| **Package** | SOT223 |
| **Configuration** | Single N-channel|
| **VDS** | 100V |
| **VGS** | ±20V |
| **Vth** | 1.8V |
| **RDS(ON)** | 120mΩ @ VGS=4.5V |
| **RDS(ON)** | 100mΩ @ VGS=10V |
| **ID** | 5A |
| **Technology** | Trench technology (Trench) |
Domain and module applications:
1. **Power management system**
N1NF10-VB is widely used in power management systems such as switching power supplies (SMPS) and DC-DC converters. Its low on-resistance and high voltage withstand capability enable it to reduce power consumption and improve overall efficiency in efficient power conversion.
2. **LED drive circuit**
This MOSFET performs well in LED drive circuits and can provide stable current control for LEDs. In various LED lighting and display applications, the high efficiency of N1NF10-VB can significantly increase the brightness and extend the life of LEDs.
3. **Motor drive circuit**
N1NF10-VB is suitable for low-power motor drive circuits, including DC motors and stepper motors. Its high current carrying capacity ensures stable operation of the motor under different loads and improves the efficiency of motor control.
4. **Mobile devices**
In mobile devices and portable electronic products, N1NF10-VB can be used for power switches and battery management systems. Its small SOT223 package makes it suitable for designs with limited space while providing high efficiency and low heat.
5. **Wireless Communication Equipment**
The device is also suitable for power amplifiers and signal conditioning circuits in wireless communication equipment. The fast switching characteristics of N1NF10-VB can meet the needs of high-frequency applications and ensure signal stability and reliability.
Through these application examples, it can be seen that N1NF10-VB has a wide range of application potential in multiple fields such as power management, LED driving and motor control, which can effectively meet the needs of modern electronic equipment for high efficiency and reliability.
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