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N1HNK60-VB Product details
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**N1HNK60-VB Product Introduction**
N1HNK60-VB is a high voltage single N-channel MOSFET in a **SOT223** package, designed for applications that require high voltage resistance and compact space. The device's **maximum drain-source voltage (VDS) is 650V**, enabling it to handle high voltage application scenarios. Its **gate drive voltage (VGS) is ±30V**, providing reliable performance under a variety of operating conditions. **The threshold voltage (Vth) is 3.5V**, ensuring effective conduction under appropriate gate voltage. Although its **on-resistance (RDS(ON)) is 10Ω** at VGS=4.5V and 8Ω at VGS=10V, it is suitable for lower current applications (**maximum drain current ID is 1A**). Using **planar technology (Plannar)**, N1HNK60-VB performs well in switching speed and thermal performance, making it an ideal choice for high voltage control circuits.
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N1HNK60-VB is a high voltage single N-channel MOSFET in a **SOT223** package, designed for applications that require high voltage resistance and compact space. The device's **maximum drain-source voltage (VDS) is 650V**, enabling it to handle high voltage application scenarios. Its **gate drive voltage (VGS) is ±30V**, providing reliable performance under a variety of operating conditions. **The threshold voltage (Vth) is 3.5V**, ensuring effective conduction under appropriate gate voltage. Although its **on-resistance (RDS(ON)) is 10Ω** at VGS=4.5V and 8Ω at VGS=10V, it is suitable for lower current applications (**maximum drain current ID is 1A**). Using **planar technology (Plannar)**, N1HNK60-VB performs well in switching speed and thermal performance, making it an ideal choice for high voltage control circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 1A | 8000mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 1A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 650V | 3.5V | 1A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
**N1HNK60-VB Parameter Description**
| **Parameter** | **Value** | **Description** |
|--------------------------|-------------------------|----------------------------------------|
| **Package Type** | SOT223 | Compact package, suitable for small circuit design|
| **Channel Type** | Single N-channel | Suitable for positive power supply and high-side switch control|
| **VDS (Drain-Source Voltage)** | 650V | Maximum drain-source voltage, suitable for high voltage applications|
| **VGS (Gate Voltage)** | ±30V | Gate drive voltage range|
| **Vth (Threshold Voltage)** | 3.5V | Minimum gate voltage required for MOSFET to turn on|
| **RDS(ON)** | 10000mΩ @ VGS=4.5V | On-resistance at 4.5V gate voltage|
| **RDS(ON)** | 8000mΩ @ VGS=10V | On-resistance at 10V gate voltage|
| **ID (drain current)** | 1A | Maximum drain current|
| **Technology** | Plannar | Planar technology, optimized conduction performance and switching characteristics|
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| **Parameter** | **Value** | **Description** |
|--------------------------|-------------------------|----------------------------------------|
| **Package Type** | SOT223 | Compact package, suitable for small circuit design|
| **Channel Type** | Single N-channel | Suitable for positive power supply and high-side switch control|
| **VDS (Drain-Source Voltage)** | 650V | Maximum drain-source voltage, suitable for high voltage applications|
| **VGS (Gate Voltage)** | ±30V | Gate drive voltage range|
| **Vth (Threshold Voltage)** | 3.5V | Minimum gate voltage required for MOSFET to turn on|
| **RDS(ON)** | 10000mΩ @ VGS=4.5V | On-resistance at 4.5V gate voltage|
| **RDS(ON)** | 8000mΩ @ VGS=10V | On-resistance at 10V gate voltage|
| **ID (drain current)** | 1A | Maximum drain current|
| **Technology** | Plannar | Planar technology, optimized conduction performance and switching characteristics|
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Domain and module applications：
**Application fields and applicable modules**
1. **High-voltage power converter**
N1HNK60-VB can be used in **high-voltage power converter**, such as AC-DC power supply and DC-DC converter, which can operate stably at a high voltage of 650V and is suitable for power management of power systems and equipment.
2. **Switching power supply**
In **switching power supply**, this MOSFET can be used as the main switching element, and its high withstand voltage characteristics are suitable for current switching and current limiting circuits, ensuring safety and reliability under various working conditions.
3. **Motor control**
N1HNK60-VB is also widely used in **motor control systems**, and can be used as a switching controller for high-voltage DC motors to provide efficient power transmission for motors.
4. **Household appliances**
This MOSFET is suitable for power management modules in various **household appliances**, such as washing machines, air conditioners and other equipment, to improve the overall performance of the equipment by optimizing energy efficiency and reducing power consumption.
5. **Inverter and Uninterruptible Power Supply (UPS)**
N1HNK60-VB is also suitable for **inverter** and UPS systems, where DC power needs to be converted to AC power to ensure stability and reliability under high voltage.
Through these applications, N1HNK60-VB demonstrates its wide applicability in high-voltage and high-efficiency occasions, becoming an important choice in the field of power management and control.
1. **High-voltage power converter**
N1HNK60-VB can be used in **high-voltage power converter**, such as AC-DC power supply and DC-DC converter, which can operate stably at a high voltage of 650V and is suitable for power management of power systems and equipment.
2. **Switching power supply**
In **switching power supply**, this MOSFET can be used as the main switching element, and its high withstand voltage characteristics are suitable for current switching and current limiting circuits, ensuring safety and reliability under various working conditions.
3. **Motor control**
N1HNK60-VB is also widely used in **motor control systems**, and can be used as a switching controller for high-voltage DC motors to provide efficient power transmission for motors.
4. **Household appliances**
This MOSFET is suitable for power management modules in various **household appliances**, such as washing machines, air conditioners and other equipment, to improve the overall performance of the equipment by optimizing energy efficiency and reducing power consumption.
5. **Inverter and Uninterruptible Power Supply (UPS)**
N1HNK60-VB is also suitable for **inverter** and UPS systems, where DC power needs to be converted to AC power to ensure stability and reliability under high voltage.
Through these applications, N1HNK60-VB demonstrates its wide applicability in high-voltage and high-efficiency occasions, becoming an important choice in the field of power management and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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