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N10L16-VB TO263 Product details
Back to previous pageProduct introduction：
1. N10L16-VB Product Introduction
N10L16-VB is a high-performance **single N-channel MOSFET** in **TO263** package, designed for high current and high efficiency applications. The **drain-source voltage (VDS)** of the device is rated at **100V**, which is suitable for medium and high voltage applications. The **turn-on threshold voltage (Vth)** of N10L16-VB is **2.5V**, which enables it to turn on quickly at a lower gate voltage, thereby increasing the switching speed of the system. The MOSFET has an extremely low on-resistance of **10mΩ** at **VGS=10V**, which significantly reduces energy loss and maintains good thermal stability under higher loads. The maximum drain current of N10L16-VB is **100A**, making it very suitable for occasions requiring high power handling. Manufactured using Trench Technology, the N10L16-VB has better switching characteristics and higher efficiency, meeting the needs of modern power management and drive applications.
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N10L16-VB is a high-performance **single N-channel MOSFET** in **TO263** package, designed for high current and high efficiency applications. The **drain-source voltage (VDS)** of the device is rated at **100V**, which is suitable for medium and high voltage applications. The **turn-on threshold voltage (Vth)** of N10L16-VB is **2.5V**, which enables it to turn on quickly at a lower gate voltage, thereby increasing the switching speed of the system. The MOSFET has an extremely low on-resistance of **10mΩ** at **VGS=10V**, which significantly reduces energy loss and maintains good thermal stability under higher loads. The maximum drain current of N10L16-VB is **100A**, making it very suitable for occasions requiring high power handling. Manufactured using Trench Technology, the N10L16-VB has better switching characteristics and higher efficiency, meeting the needs of modern power management and drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description of N10L16-VB
| **Parameter** | **Symbol** | **Value** | **Unit** | **Description** |
|---------------------|--------------|----------------------------|------------------|-----------------------------------|
| **Drain-Source voltage** | VDS | 100 | V | Maximum withstand voltage between drain and source|
| **Gate-Source voltage** | VGS | ±20 | V | Maximum rated voltage between gate and source|
| **Turn-on threshold voltage** | Vth | 2.5 | V | Gate voltage required for MOSFET to turn on|
| **On-resistance** | RDS(on) | 23 (VGS=4.5V) | mΩ | Resistance value of drain-source path|
| | RDS(on) | 10 (VGS=10V) | mΩ | Drain-source resistance|
| **Continuous drain current** | ID | 100 | A | Maximum continuous drain current allowed|
| **Technology** | - | Trench process | - | Provides efficient switching performance and thermal management|
| **Package** | - | TO263 | - | Suitable package design for high current applications|
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| **Parameter** | **Symbol** | **Value** | **Unit** | **Description** |
|---------------------|--------------|----------------------------|------------------|-----------------------------------|
| **Drain-Source voltage** | VDS | 100 | V | Maximum withstand voltage between drain and source|
| **Gate-Source voltage** | VGS | ±20 | V | Maximum rated voltage between gate and source|
| **Turn-on threshold voltage** | Vth | 2.5 | V | Gate voltage required for MOSFET to turn on|
| **On-resistance** | RDS(on) | 23 (VGS=4.5V) | mΩ | Resistance value of drain-source path|
| | RDS(on) | 10 (VGS=10V) | mΩ | Drain-source resistance|
| **Continuous drain current** | ID | 100 | A | Maximum continuous drain current allowed|
| **Technology** | - | Trench process | - | Provides efficient switching performance and thermal management|
| **Package** | - | TO263 | - | Suitable package design for high current applications|
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Domain and module applications：
III. Application fields and module examples
1. **Power management system**
N10L16-VB is suitable for high-efficiency DC-DC converters and power management modules, which can effectively control the switching and regulation of power supplies to meet various high-power power supply requirements.
2. **Electric vehicles**
In the drive control and battery management system of electric vehicles, this MOSFET can handle high currents, support fast power conversion and motor control, and improve energy efficiency.
3. **Industrial equipment**
N10L16-VB can be used in industrial automation equipment such as servo drives and inverters. Its high current handling capability and good thermal performance are very suitable for heavy-duty applications.
4. **LED lighting**
In LED drive circuits, N10L16-VB can achieve efficient current control to ensure the stability and energy efficiency of LED lighting.
5. **Household appliances**
This MOSFET can be used for motor drive and power switch control in household appliances, such as microwave ovens and washing machines, to improve the operating efficiency of the equipment.
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The high conduction capability, low on-resistance and excellent switching characteristics of N10L16-VB make it an ideal choice for modern power management and high-power applications. As electronic products continue to improve power and efficiency, this device has a wide range of potential and market demand in various applications.
1. **Power management system**
N10L16-VB is suitable for high-efficiency DC-DC converters and power management modules, which can effectively control the switching and regulation of power supplies to meet various high-power power supply requirements.
2. **Electric vehicles**
In the drive control and battery management system of electric vehicles, this MOSFET can handle high currents, support fast power conversion and motor control, and improve energy efficiency.
3. **Industrial equipment**
N10L16-VB can be used in industrial automation equipment such as servo drives and inverters. Its high current handling capability and good thermal performance are very suitable for heavy-duty applications.
4. **LED lighting**
In LED drive circuits, N10L16-VB can achieve efficient current control to ensure the stability and energy efficiency of LED lighting.
5. **Household appliances**
This MOSFET can be used for motor drive and power switch control in household appliances, such as microwave ovens and washing machines, to improve the operating efficiency of the equipment.
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The high conduction capability, low on-resistance and excellent switching characteristics of N10L16-VB make it an ideal choice for modern power management and high-power applications. As electronic products continue to improve power and efficiency, this device has a wide range of potential and market demand in various applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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