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N1033-VB Product details
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1. N1033-VB Product Introduction
N1033-VB is a high-performance N-type MOSFET in a **TO263** package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is **100V** and its maximum drain current (ID) is **45A**, which is very suitable for power management and drive circuits that require high switching efficiency and low conduction loss. The device has a low on-resistance (RDS(ON)) of **30mΩ** at a gate voltage of **10V**, and only **35mΩ** at **4.5V**, ensuring its efficiency when working at high current. N1033-VB uses **Trench technology** to improve current density and switching performance, and is widely used in power conversion, motor drive, LED drive and other fields.
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N1033-VB is a high-performance N-type MOSFET in a **TO263** package, designed for high voltage and high current applications. Its maximum drain-source voltage (VDS) is **100V** and its maximum drain current (ID) is **45A**, which is very suitable for power management and drive circuits that require high switching efficiency and low conduction loss. The device has a low on-resistance (RDS(ON)) of **30mΩ** at a gate voltage of **10V**, and only **35mΩ** at **4.5V**, ensuring its efficiency when working at high current. N1033-VB uses **Trench technology** to improve current density and switching performance, and is widely used in power conversion, motor drive, LED drive and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description of N1033-VB
| **Parameter** | **Value** | **Description** |
|-----------------------------|----------------------------|-------------------------------------------|
| **Package type** | TO263 | Compact package, suitable for high power and high density applications|
| **Channel type** | Single N-Channel | Control current flows from drain to source|
| **Drain-source voltage VDS** | 100V | Maximum withstand voltage, suitable for high voltage applications|
| **Gate-source voltage VGS** | ±20V | Maximum gate-to-source voltage|
| **Turn-on threshold Vth** | 1.8V | Minimum gate voltage required to turn on MOSFET|
| **On-resistance RDS(ON)** | 35mΩ @ VGS = 4.5V | On-resistance at gate voltage 4.5V|
| **On-resistance RDS(ON)** | 30mΩ @ VGS = 10V | On-resistance at gate voltage 10V|
| **Continuous drain current ID** | 45A | Maximum continuous current capability|
| **Transient peak current** | 90A | Supports high current surges for short periods of time|
| **Technology type** | Trench | Improves conductivity and reduces switching losses|
| **Operating temperature range** | -55°C ~ +150°C | Able to work stably in extreme temperature environments|
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| **Parameter** | **Value** | **Description** |
|-----------------------------|----------------------------|-------------------------------------------|
| **Package type** | TO263 | Compact package, suitable for high power and high density applications|
| **Channel type** | Single N-Channel | Control current flows from drain to source|
| **Drain-source voltage VDS** | 100V | Maximum withstand voltage, suitable for high voltage applications|
| **Gate-source voltage VGS** | ±20V | Maximum gate-to-source voltage|
| **Turn-on threshold Vth** | 1.8V | Minimum gate voltage required to turn on MOSFET|
| **On-resistance RDS(ON)** | 35mΩ @ VGS = 4.5V | On-resistance at gate voltage 4.5V|
| **On-resistance RDS(ON)** | 30mΩ @ VGS = 10V | On-resistance at gate voltage 10V|
| **Continuous drain current ID** | 45A | Maximum continuous current capability|
| **Transient peak current** | 90A | Supports high current surges for short periods of time|
| **Technology type** | Trench | Improves conductivity and reduces switching losses|
| **Operating temperature range** | -55°C ~ +150°C | Able to work stably in extreme temperature environments|
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Domain and module applications：
III. Application fields and module examples
N1033-VB is widely used in many fields and modules due to its superior performance, including:
1. **Switching power supply**
- N1033-VB is used as a switching element in the switching power supply (SMPS), which can efficiently convert voltage and reduce energy loss, ensuring high efficiency and stability of the power supply.
2. **Motor drive**
- This MOSFET can be used in motor control circuits to provide efficient current management, suitable for use in industrial automation and home appliances, and improve the control accuracy and efficiency of the motor.
3. **LED drive**
- N1033-VB can achieve efficient current control in LED drive circuits, suitable for various lighting applications, optimize energy efficiency and extend the service life of lamps.
4. **Power management IC**
- This device is widely used in power management integrated circuits to provide stable power output, suitable for mobile phones, laptops and other consumer electronic products.
5. **DC-DC Converters**
- N1033-VB is suitable for use in DC-DC converters, providing efficient voltage conversion, and is widely used in mobile devices and portable power solutions.
6. **Inverters**
- In solar inverters and other energy conversion devices, this MOSFET can achieve efficient energy conversion and optimize the overall performance of the system.
Through these applications, N1033-VB provides an efficient and reliable solution to meet the power and efficiency needs of modern electronic devices.
N1033-VB is widely used in many fields and modules due to its superior performance, including:
1. **Switching power supply**
- N1033-VB is used as a switching element in the switching power supply (SMPS), which can efficiently convert voltage and reduce energy loss, ensuring high efficiency and stability of the power supply.
2. **Motor drive**
- This MOSFET can be used in motor control circuits to provide efficient current management, suitable for use in industrial automation and home appliances, and improve the control accuracy and efficiency of the motor.
3. **LED drive**
- N1033-VB can achieve efficient current control in LED drive circuits, suitable for various lighting applications, optimize energy efficiency and extend the service life of lamps.
4. **Power management IC**
- This device is widely used in power management integrated circuits to provide stable power output, suitable for mobile phones, laptops and other consumer electronic products.
5. **DC-DC Converters**
- N1033-VB is suitable for use in DC-DC converters, providing efficient voltage conversion, and is widely used in mobile devices and portable power solutions.
6. **Inverters**
- In solar inverters and other energy conversion devices, this MOSFET can achieve efficient energy conversion and optimize the overall performance of the system.
Through these applications, N1033-VB provides an efficient and reliable solution to meet the power and efficiency needs of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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