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N1033-VB TO262 Product details
Back to previous pageProduct introduction：
1. N1033-VB Product Introduction
N1033-VB is a high-efficiency **N-channel power MOSFET**, using **TO-262 package**, designed to meet the needs of various high-voltage and high-current applications. The **drain-source voltage (VDS)** of this device can reach **100V**, and the maximum continuous current **ID** is **50A**. Thanks to its **Trench technology**, the on-resistance of N1033-VB is very low, only **20mΩ** (at **VGS = 10V**), which significantly reduces switching losses and heat generation. This makes N1033-VB very suitable for high-efficiency power management and switching circuits, and can effectively improve the overall performance of the system.
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N1033-VB is a high-efficiency **N-channel power MOSFET**, using **TO-262 package**, designed to meet the needs of various high-voltage and high-current applications. The **drain-source voltage (VDS)** of this device can reach **100V**, and the maximum continuous current **ID** is **50A**. Thanks to its **Trench technology**, the on-resistance of N1033-VB is very low, only **20mΩ** (at **VGS = 10V**), which significantly reduces switching losses and heat generation. This makes N1033-VB very suitable for high-efficiency power management and switching circuits, and can effectively improve the overall performance of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2V | 50A | 20mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2V | 50A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 100V | 2V | 50A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
II. Detailed parameter description of N1033-VB
| **Parameter** | **Symbol** | **Value** | **Description** |
|------------------------|-----------|-----------------------------|-------------------------------|
| **Drain-source voltage** | VDS | 100V | Maximum withstand voltage|
| **Gate-source voltage** | VGS | ±20V | Maximum gate-to-source voltage range|
| **Turning threshold voltage** | Vth | 2V | Minimum voltage required for MOSFET to start conducting|
| **On-resistance** | RDS(ON) | 20mΩ @ VGS = 10V | On-resistance in the on state|
| **Maximum drain current** | ID | 50A | Maximum current during continuous conduction|
| **Peak pulse current** | IDM | 100A | Maximum current carried during short-term pulse|
| **Power consumption** | Ptot | 75W | Maximum power dissipation|
| **Operating junction temperature range** | Tj | -55°C ~ 150°C | Safe operating temperature range|
| **Package type** | - | TO-262 | Package that provides good heat dissipation|
| **Technology type** | - | Trench | Structure that provides low conduction loss|
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| **Parameter** | **Symbol** | **Value** | **Description** |
|------------------------|-----------|-----------------------------|-------------------------------|
| **Drain-source voltage** | VDS | 100V | Maximum withstand voltage|
| **Gate-source voltage** | VGS | ±20V | Maximum gate-to-source voltage range|
| **Turning threshold voltage** | Vth | 2V | Minimum voltage required for MOSFET to start conducting|
| **On-resistance** | RDS(ON) | 20mΩ @ VGS = 10V | On-resistance in the on state|
| **Maximum drain current** | ID | 50A | Maximum current during continuous conduction|
| **Peak pulse current** | IDM | 100A | Maximum current carried during short-term pulse|
| **Power consumption** | Ptot | 75W | Maximum power dissipation|
| **Operating junction temperature range** | Tj | -55°C ~ 150°C | Safe operating temperature range|
| **Package type** | - | TO-262 | Package that provides good heat dissipation|
| **Technology type** | - | Trench | Structure that provides low conduction loss|
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Domain and module applications：
III. Application fields and module examples
1. **Power converter**
- N1033-VB is widely used in **switching power supplies** and **DC-DC converters**. Its low on-resistance and high current carrying capacity can achieve efficient power conversion, reduce energy loss and improve system efficiency.
2. **Motor drive**
- In **motor control systems**, N1033-VB can be used to drive and control motors to achieve efficient power output. Its fast switching characteristics and high current carrying capacity ensure fast response and precise control of the motor.
3. **Industrial automation**
- This MOSFET is suitable for **industrial automation equipment**, such as automation control and process control systems. N1033-VB can be used to drive relays, valves and other electrical components to improve the reliability and response speed of the entire system.
4. **LED drive circuit**
- In **LED lighting** and **display drive circuit**, N1033-VB can be used to provide stable current and voltage to ensure high efficiency and long life of LED, especially in high-power LED applications.
5. **Electric Vehicle**
- N1033-VB is also suitable for **electric vehicle** power management system, including battery management and charging circuit, which can work efficiently and stably at high voltage to meet the power needs of modern electric vehicles.
The superior performance and versatility of N1033-VB enable it to show excellent electrical performance in a variety of application scenarios, and it is an ideal choice for high voltage and high current applications.
1. **Power converter**
- N1033-VB is widely used in **switching power supplies** and **DC-DC converters**. Its low on-resistance and high current carrying capacity can achieve efficient power conversion, reduce energy loss and improve system efficiency.
2. **Motor drive**
- In **motor control systems**, N1033-VB can be used to drive and control motors to achieve efficient power output. Its fast switching characteristics and high current carrying capacity ensure fast response and precise control of the motor.
3. **Industrial automation**
- This MOSFET is suitable for **industrial automation equipment**, such as automation control and process control systems. N1033-VB can be used to drive relays, valves and other electrical components to improve the reliability and response speed of the entire system.
4. **LED drive circuit**
- In **LED lighting** and **display drive circuit**, N1033-VB can be used to provide stable current and voltage to ensure high efficiency and long life of LED, especially in high-power LED applications.
5. **Electric Vehicle**
- N1033-VB is also suitable for **electric vehicle** power management system, including battery management and charging circuit, which can work efficiently and stably at high voltage to meet the power needs of modern electric vehicles.
The superior performance and versatility of N1033-VB enable it to show excellent electrical performance in a variety of application scenarios, and it is an ideal choice for high voltage and high current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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