MTW8N60E-VB Product details
Product introduction:
MTW8N60E-VB is a high-performance **single N-channel MOSFET**, using **TO-247 package**, designed for high voltage applications, capable of withstanding **650V** drain-source voltage (V_DS). The device has a high gate-source voltage range (V_GS ±30V), suitable for a variety of power management and control applications. Its turn-on voltage (V_th) is **3.5V**, and its on-resistance (R_DS(ON)) is **430mΩ** at a gate voltage of **10V**, which makes it have low conduction loss during operation. The maximum drain current (I_D) is **18A**. The product adopts **Plannar technology** to ensure its stability and reliability under high temperature and high frequency operation, and is widely used in power converters, inverters and motor drives.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 18A | 430mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
| **Parameter** | **Description** | **Value** |
|-------------------------|------------------------------------------------|--------------------|
| **Package Type** | TO-247 Package| - |
| **Polarity** | Single N-Channel| - |
| **V_DS** | Drain-Source Voltage| 650V |
| **V_GS** | Gate-Source Voltage Range| ±30V |
| **V_th** | Gate Turn-On Voltage| 3.5V |
| **R_DS(ON)** | On-Resistance (V_GS = 10V) | 430mΩ |
| **I_D** | Maximum Drain Current| 18A |
| **Power Dissipation (P_D)** | Maximum Power Dissipation Capability (at 25°C) | 75W |
| **Operating temperature range** | Allowable junction temperature range| -55°C ~ 150°C |
| **Technology** | Plannar technology| - |
| **Package pins** | 3 pins, suitable for soldering and heat sink mounting| - |
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Domain and module applications:
1. **Power conversion and management**
MTW8N60E-VB is widely used in **switching power supplies (SMPS)** and **DC-DC converters**. Its high drain voltage and high current handling capability enable this MOSFET to maintain efficient energy management during the conversion process and reduce the heat loss of the system.
2. **Inverter and renewable energy system**
This MOSFET is suitable for power converters in **solar inverter** and other renewable energy applications, helping to improve energy conversion efficiency and system stability, and ensure reliable operation under different working conditions.
3. **Motor drive and control**
MTW8N60E-VB is suitable for **motor drive** systems, especially in inverter and servo motor control, which can effectively control the speed and torque of the motor and improve the drive efficiency.
4. **High-voltage switches in electrical equipment**
This MOSFET can be used for high-voltage switches in **industrial equipment** and **electrical control systems**, and can maintain good performance under extreme working conditions to ensure the safety and stability of the system.
5. **Automotive electronics and high-voltage applications**
MTW8N60E-VB is also suitable for power management systems in **electric vehicles** and hybrid vehicles, capable of handling high voltages and high currents, providing reliable support for the power systems of electric vehicles.
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Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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