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MTW7N80E-VB Product details
Back to previous pageProduct introduction：
1. MTW7N80E-VB Product Introduction
MTW7N80E-VB is a high voltage N-type MOSFET in a **TO247** package, designed for applications requiring high voltage and high current. The device's maximum drain-source voltage (VDS) can reach **800V**, making it ideal for power conversion, motor drive and high-voltage switching circuits. Its maximum drain current (ID) is **11A**, and at a gate voltage of **10V**, the on-resistance (RDS(ON)) is **500mΩ**, showing low power consumption and high efficiency. MTW7N80E-VB uses **SJ_Multi-EPI technology**, which can work stably under high voltage and high temperature conditions, making it very suitable for use in industrial control and power management fields.
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MTW7N80E-VB is a high voltage N-type MOSFET in a **TO247** package, designed for applications requiring high voltage and high current. The device's maximum drain-source voltage (VDS) can reach **800V**, making it ideal for power conversion, motor drive and high-voltage switching circuits. Its maximum drain current (ID) is **11A**, and at a gate voltage of **10V**, the on-resistance (RDS(ON)) is **500mΩ**, showing low power consumption and high efficiency. MTW7N80E-VB uses **SJ_Multi-EPI technology**, which can work stably under high voltage and high temperature conditions, making it very suitable for use in industrial control and power management fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. MTW7N80E-VB Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|-----------------------------|----------------------------|------------------------------------------|
| **Package Type** | TO247 | Suitable for high power and high temperature environments, providing good heat dissipation performance|
| **Channel Type** | Single N-Channel | Control current flows from drain to source|
| **Drain-Source Voltage VDS** | 800V | Maximum withstand voltage, suitable for high voltage applications|
| **Gate-Source Voltage VGS** | ±30V | Maximum gate-to-source voltage|
| **Turn-On Threshold Vth** | 3.5V | Minimum gate voltage required to turn on MOSFET|
| **On-Resistance RDS(ON)** | 500mΩ @ VGS = 10V | On-resistance at gate voltage 10V|
| **Continuous drain current ID** | 11A | Maximum continuous current capability|
| **Transient peak current** | 22A | Supports high current surge in a short period of time|
| **Technology type** | SJ_Multi-EPI | Suitable for high voltage and high temperature environments, with good conductivity and heat dissipation|
| **Operating temperature range** | -55°C ~ +150°C | Able to work stably in extreme temperature environments|
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| **Parameter** | **Value** | **Description** |
|-----------------------------|----------------------------|------------------------------------------|
| **Package Type** | TO247 | Suitable for high power and high temperature environments, providing good heat dissipation performance|
| **Channel Type** | Single N-Channel | Control current flows from drain to source|
| **Drain-Source Voltage VDS** | 800V | Maximum withstand voltage, suitable for high voltage applications|
| **Gate-Source Voltage VGS** | ±30V | Maximum gate-to-source voltage|
| **Turn-On Threshold Vth** | 3.5V | Minimum gate voltage required to turn on MOSFET|
| **On-Resistance RDS(ON)** | 500mΩ @ VGS = 10V | On-resistance at gate voltage 10V|
| **Continuous drain current ID** | 11A | Maximum continuous current capability|
| **Transient peak current** | 22A | Supports high current surge in a short period of time|
| **Technology type** | SJ_Multi-EPI | Suitable for high voltage and high temperature environments, with good conductivity and heat dissipation|
| **Operating temperature range** | -55°C ~ +150°C | Able to work stably in extreme temperature environments|
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Domain and module applications：
III. Application fields and module examples
MTW7N80E-VB is widely used in the following fields and modules due to its excellent performance and high voltage capability:
1. **Switching power supply**
- In the switching power supply (SMPS), MTW7N80E-VB can be used as an efficient switching element, which can withstand high voltage and provide stable current output, ensuring high efficiency and low loss in the power conversion process.
2. **Inverter**
- This MOSFET is suitable for inverter design to convert DC power to AC power. It is widely used in solar inverters and wind power generation systems, helping to improve the efficiency and stability of power conversion.
3. **Motor drive**
- In the motor control system, MTW7N80E-VB can be used as a switching device to drive high-voltage DC motors or AC motors, providing efficient control and better power output.
4. **Industrial Automation**
- This device plays an important role in the control circuit of industrial equipment and is suitable for power management and control systems to ensure efficient operation and safety of equipment.
5. **High-voltage Power Module**
- In high-voltage power modules, MTW7N80E-VB provides reliable current management capabilities and is suitable for power modules in test equipment and communication systems.
6. **LED Driver**
- In LED driver circuits, using MTW7N80E-VB can achieve efficient current control, improve the energy efficiency of lighting systems, and extend the service life of LED lamps.
Through the above applications, MTW7N80E-VB can provide stable and reliable solutions in various high-voltage, high-efficiency power electronic devices to meet the stringent requirements of modern electronic devices for power and efficiency.
MTW7N80E-VB is widely used in the following fields and modules due to its excellent performance and high voltage capability:
1. **Switching power supply**
- In the switching power supply (SMPS), MTW7N80E-VB can be used as an efficient switching element, which can withstand high voltage and provide stable current output, ensuring high efficiency and low loss in the power conversion process.
2. **Inverter**
- This MOSFET is suitable for inverter design to convert DC power to AC power. It is widely used in solar inverters and wind power generation systems, helping to improve the efficiency and stability of power conversion.
3. **Motor drive**
- In the motor control system, MTW7N80E-VB can be used as a switching device to drive high-voltage DC motors or AC motors, providing efficient control and better power output.
4. **Industrial Automation**
- This device plays an important role in the control circuit of industrial equipment and is suitable for power management and control systems to ensure efficient operation and safety of equipment.
5. **High-voltage Power Module**
- In high-voltage power modules, MTW7N80E-VB provides reliable current management capabilities and is suitable for power modules in test equipment and communication systems.
6. **LED Driver**
- In LED driver circuits, using MTW7N80E-VB can achieve efficient current control, improve the energy efficiency of lighting systems, and extend the service life of LED lamps.
Through the above applications, MTW7N80E-VB can provide stable and reliable solutions in various high-voltage, high-efficiency power electronic devices to meet the stringent requirements of modern electronic devices for power and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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