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MTW54N05E-VB Product details
Back to previous pageProduct introduction：
1. MTW54N05E-VB Product Introduction
MTW54N05E-VB is a high-performance **N-channel power MOSFET** in a **TO-247 package**, designed for high-power applications. The device has a **drain-source voltage (VDS)** of up to **60V** and a continuous current carrying capacity of up to **150A**. Utilizing advanced **Trench technology**, the MTW54N05E-VB achieves an extremely low on-resistance of only **7mΩ** (at **VGS = 10V**), greatly reducing energy loss and heat generation. Its high performance and reliability make it suitable for a wide range of power management and switching applications.
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MTW54N05E-VB is a high-performance **N-channel power MOSFET** in a **TO-247 package**, designed for high-power applications. The device has a **drain-source voltage (VDS)** of up to **60V** and a continuous current carrying capacity of up to **150A**. Utilizing advanced **Trench technology**, the MTW54N05E-VB achieves an extremely low on-resistance of only **7mΩ** (at **VGS = 10V**), greatly reducing energy loss and heat generation. Its high performance and reliability make it suitable for a wide range of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. MTW54N05E-VB Detailed Parameters
| **Parameter** | **Symbol** | **Value** | **Description** |
|------------------------|-----------|-----------------------------|-------------------------------|
| **Drain-Source Voltage** | VDS | 60V | Maximum Withstand Voltage|
| **Gate-Source Voltage** | VGS | ±20V | Maximum Gate-Source Voltage Range|
| **Turning Threshold Voltage** | Vth | 2.5V | Minimum Voltage for MOSFET to Start Conducting|
| **On-Resistance** | RDS(ON) | 7mΩ @ VGS = 10V | On-Resistance in On State|
| **Maximum Drain Current** | ID | 150A | Maximum Current in Continuous Conducting|
| **Peak Pulse Current** | IDM | 300A | Maximum Current Carried in Short-Time Pulse|
| **Power consumption** | Ptot | 150W | Maximum power consumption|
| **Operating junction temperature range** | Tj | -55°C ~ 150°C | Safe operating temperature range|
| **Package type** | - | TO-247 | Package that provides good heat dissipation|
| **Technology type** | - | Trench | Structure that provides low conduction loss|
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| **Parameter** | **Symbol** | **Value** | **Description** |
|------------------------|-----------|-----------------------------|-------------------------------|
| **Drain-Source Voltage** | VDS | 60V | Maximum Withstand Voltage|
| **Gate-Source Voltage** | VGS | ±20V | Maximum Gate-Source Voltage Range|
| **Turning Threshold Voltage** | Vth | 2.5V | Minimum Voltage for MOSFET to Start Conducting|
| **On-Resistance** | RDS(ON) | 7mΩ @ VGS = 10V | On-Resistance in On State|
| **Maximum Drain Current** | ID | 150A | Maximum Current in Continuous Conducting|
| **Peak Pulse Current** | IDM | 300A | Maximum Current Carried in Short-Time Pulse|
| **Power consumption** | Ptot | 150W | Maximum power consumption|
| **Operating junction temperature range** | Tj | -55°C ~ 150°C | Safe operating temperature range|
| **Package type** | - | TO-247 | Package that provides good heat dissipation|
| **Technology type** | - | Trench | Structure that provides low conduction loss|
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Domain and module applications：
III. Applications and module examples
1. **Power management system**
- MTW54N05E-VB is very suitable for **power converter** and **DC-DC converter**. Its high conduction capability and low on-resistance enable it to effectively convert high power current, thereby improving overall system efficiency.
2. **Electric drive system**
- In **motor drive** and **industrial automation control system**, this MOSFET can be used for motor control and drive, supporting efficient switching of high current to ensure efficient operation and response speed of the motor.
3. **Renewable energy**
- MTW54N05E-VB is suitable for **solar inverter** and **wind energy conversion system**. It can work under high voltage conditions, provide stable and reliable energy conversion, and meet the needs of efficient utilization of renewable energy.
4. **Automotive electronics**
- In chargers and power management systems for **electric vehicles**, this MOSFET enables efficient power control, supports fast charging, and meets the stringent charging efficiency requirements of modern electric vehicles.
5. **High-power switching applications**
- The MTW54N05E-VB is also suitable for **high-frequency switching power supplies** and **power electronic conversion devices**, where its fast switching characteristics and high current carrying capability enable it to provide reliable performance in a variety of high-power applications.
The superior performance and versatility of the MTW54N05E-VB make it an ideal choice for high-voltage, high-power applications, meeting electrical performance requirements in a variety of harsh environments.
1. **Power management system**
- MTW54N05E-VB is very suitable for **power converter** and **DC-DC converter**. Its high conduction capability and low on-resistance enable it to effectively convert high power current, thereby improving overall system efficiency.
2. **Electric drive system**
- In **motor drive** and **industrial automation control system**, this MOSFET can be used for motor control and drive, supporting efficient switching of high current to ensure efficient operation and response speed of the motor.
3. **Renewable energy**
- MTW54N05E-VB is suitable for **solar inverter** and **wind energy conversion system**. It can work under high voltage conditions, provide stable and reliable energy conversion, and meet the needs of efficient utilization of renewable energy.
4. **Automotive electronics**
- In chargers and power management systems for **electric vehicles**, this MOSFET enables efficient power control, supports fast charging, and meets the stringent charging efficiency requirements of modern electric vehicles.
5. **High-power switching applications**
- The MTW54N05E-VB is also suitable for **high-frequency switching power supplies** and **power electronic conversion devices**, where its fast switching characteristics and high current carrying capability enable it to provide reliable performance in a variety of high-power applications.
The superior performance and versatility of the MTW54N05E-VB make it an ideal choice for high-voltage, high-power applications, meeting electrical performance requirements in a variety of harsh environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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