MTW4N80-VB Product details
Product introduction:
The MTW4N80-VB is a high voltage single N-channel MOSFET in a TO247 package, designed for power management applications that require high voltage resistance and high efficiency. The device has a maximum drain-source voltage (VDS) of 850V, suitable for high-voltage DC converters and motor drive circuits. Its gate-source voltage (VGS) is ±30V, ensuring stability under different operating environments. In addition, the threshold voltage (Vth) of the MTW4N80-VB is 3.3V, which has excellent switching performance. The low on-resistance (RDS(ON)) is 1150mΩ@VGS=10V, providing excellent conduction efficiency and suitable for operation under high load conditions.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 850V | 3.3V | 10A | 1150mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 850V | 3.3V | 10A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 850V | 3.3V | 10A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
| Parameter | Value|
|---------------------------|--------------------------|
| **Model** | MTW4N80-VB |
| **Package** | TO247 |
| **Configuration** | Single N-channel|
| **VDS** | 850V |
| **VGS** | ±30V |
| **Vth** | 3.3V |
| **RDS(ON)** | 1150mΩ @ VGS=10V |
| **ID** | 10A |
| **Technology** | Plannar |
Domain and module applications:
1. **Power management system**
MTW4N80-VB is suitable for various power converters such as switching power supplies (SMPS) and DC-DC converters. High voltage and high efficiency switching elements are required in these applications to reduce energy consumption and improve the overall performance of the system.
2. **Motor drive circuit**
This MOSFET can be widely used in motor drivers, such as drive circuits for DC motors and stepper motors. In these applications, the high withstand voltage and low on-resistance of MTW4N80-VB enable it to withstand high loads and improve the efficiency of motor control.
3. **Welding equipment**
MTW4N80-VB is also suitable for high power welding applications such as spot welders and laser welding equipment. Its high voltage withstand capability and excellent switching characteristics enable it to perform well in welding environments with high transient currents.
4. **Inverter**
In solar inverters and other inverter applications, this MOSFET can be used to convert DC to AC. Its high VDS and low RDS(ON) characteristics can effectively improve energy conversion efficiency and reduce heat generation.
5. **Power Electronics Modules**
MTW4N80-VB is suitable for various power electronic modules such as inverters and power conditioning devices. These modules require stable switching performance and high voltage tolerance for efficient power conversion and control.
Through these application examples, we can see the importance of MTW4N80-VB in high voltage and high-efficiency circuit design to meet the growing needs of modern power electronics products.
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