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MTW35N15E-VB Product details
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**MTW35N15E-VB Product Introduction**
MTW35N15E-VB is a high-performance single N-channel MOSFET in a **TO247** package, designed for high current and high efficiency applications. The device has a **maximum drain-source voltage (VDS) of 150V**, suitable for a variety of electrical environments. Its **gate drive voltage (VGS) is ±20V**, ensuring stability and reliability under different conditions. **The threshold voltage (Vth) is 3V**, enabling it to be effectively turned on at a lower gate voltage. The **on-resistance (RDS(ON)) of this MOSFET is 12mΩ** at VGS=10V, and the extremely low on-resistance significantly reduces power consumption and improves power efficiency. The maximum drain current is **150A**, and it uses **Trench technology**, which has excellent switching speed and thermal performance, making it suitable for a variety of high-power applications.
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MTW35N15E-VB is a high-performance single N-channel MOSFET in a **TO247** package, designed for high current and high efficiency applications. The device has a **maximum drain-source voltage (VDS) of 150V**, suitable for a variety of electrical environments. Its **gate drive voltage (VGS) is ±20V**, ensuring stability and reliability under different conditions. **The threshold voltage (Vth) is 3V**, enabling it to be effectively turned on at a lower gate voltage. The **on-resistance (RDS(ON)) of this MOSFET is 12mΩ** at VGS=10V, and the extremely low on-resistance significantly reduces power consumption and improves power efficiency. The maximum drain current is **150A**, and it uses **Trench technology**, which has excellent switching speed and thermal performance, making it suitable for a variety of high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
**MTW35N15E-VB Parameter Description**
| **Parameter** | **Value** | **Description** |
|--------------------------|-------------------------|----------------------------------------|
| **Package Type** | TO247 | Rugged package for high power applications|
| **Channel Type** | Single N-channel | Suitable for positive supply and high-side switch control|
| **VDS (Drain-Source Voltage)** | 150V | Maximum drain-source voltage for high voltage applications|
| **VGS (Gate Voltage)** | ±20V | Gate drive voltage range|
| **Vth (Threshold Voltage)** | 3V | Minimum gate voltage required for MOSFET to turn on|
| **RDS(ON)** | 12mΩ @VGS=10V | On resistance at 10V gate voltage|
| **ID (Drain Current)** | 150A | Maximum drain current|
| **Technology** | Trench | Trench technology, optimized conduction performance and switching characteristics|
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| **Parameter** | **Value** | **Description** |
|--------------------------|-------------------------|----------------------------------------|
| **Package Type** | TO247 | Rugged package for high power applications|
| **Channel Type** | Single N-channel | Suitable for positive supply and high-side switch control|
| **VDS (Drain-Source Voltage)** | 150V | Maximum drain-source voltage for high voltage applications|
| **VGS (Gate Voltage)** | ±20V | Gate drive voltage range|
| **Vth (Threshold Voltage)** | 3V | Minimum gate voltage required for MOSFET to turn on|
| **RDS(ON)** | 12mΩ @VGS=10V | On resistance at 10V gate voltage|
| **ID (Drain Current)** | 150A | Maximum drain current|
| **Technology** | Trench | Trench technology, optimized conduction performance and switching characteristics|
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Domain and module applications：
**Applications and Applicable Modules**
1. **Power Converters**
The MTW35N15E-VB is widely used in **power converters**, especially in switching power supplies and DC-DC converters, where it can achieve efficient energy conversion due to its high drain current and low on-resistance.
2. **Motor Drive**
In **motor drive systems**, this MOSFET is suitable for controlling high-power motors, such as industrial motors, fans and pumps, and can operate stably under high voltage and high current environments.
3. **Power Management**
The MTW35N15E-VB is suitable for use in **power management modules**, where it can be used as a switching element in power switch controllers and battery management systems to ensure efficient power distribution and management.
4. **Inverters**
This MOSFET also has important applications in **inverters**, such as solar inverters and UPS systems, where its high current carrying capacity can improve system reliability and efficiency.
5. **Automotive Electronics**
In **automotive electrical systems**, the MTW35N15E-VB can be used in a variety of high-power applications such as electric power steering systems, powertrain control, and battery management systems to ensure stable performance under harsh conditions.
Through these application scenarios, the MTW35N15E-VB demonstrates its wide applicability in high-power and high-voltage applications, making it an ideal choice for high-efficiency power management and control.
1. **Power Converters**
The MTW35N15E-VB is widely used in **power converters**, especially in switching power supplies and DC-DC converters, where it can achieve efficient energy conversion due to its high drain current and low on-resistance.
2. **Motor Drive**
In **motor drive systems**, this MOSFET is suitable for controlling high-power motors, such as industrial motors, fans and pumps, and can operate stably under high voltage and high current environments.
3. **Power Management**
The MTW35N15E-VB is suitable for use in **power management modules**, where it can be used as a switching element in power switch controllers and battery management systems to ensure efficient power distribution and management.
4. **Inverters**
This MOSFET also has important applications in **inverters**, such as solar inverters and UPS systems, where its high current carrying capacity can improve system reliability and efficiency.
5. **Automotive Electronics**
In **automotive electrical systems**, the MTW35N15E-VB can be used in a variety of high-power applications such as electric power steering systems, powertrain control, and battery management systems to ensure stable performance under harsh conditions.
Through these application scenarios, the MTW35N15E-VB demonstrates its wide applicability in high-power and high-voltage applications, making it an ideal choice for high-efficiency power management and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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