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MTW33N10E-VB Product details
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MTW33N10E-VB Product Introduction
MTW33N10E-VB is a high-performance **single N-channel MOSFET**, using **TO-247 package**, designed for high current and high-efficiency switching and power management applications. Its maximum drain-source voltage (VDS) is **100V**, which is very suitable for use in applications requiring medium voltage. The gate-source voltage (VGS) of this device can reach **±20V**, and the on-resistance (RDS(ON)) is 35mΩ** at a gate voltage of **10V, providing low power consumption and high-efficiency current control. The maximum drain current (ID) of MTW33N10E-VB can reach **85A**, and it uses **Trench technology** to ensure stability and reliability in high-frequency and high-temperature environments, and is suitable for a wide range of applications such as power conversion and drive motors.
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MTW33N10E-VB is a high-performance **single N-channel MOSFET**, using **TO-247 package**, designed for high current and high-efficiency switching and power management applications. Its maximum drain-source voltage (VDS) is **100V**, which is very suitable for use in applications requiring medium voltage. The gate-source voltage (VGS) of this device can reach **±20V**, and the on-resistance (RDS(ON)) is 35mΩ** at a gate voltage of **10V, providing low power consumption and high-efficiency current control. The maximum drain current (ID) of MTW33N10E-VB can reach **85A**, and it uses **Trench technology** to ensure stability and reliability in high-frequency and high-temperature environments, and is suitable for a wide range of applications such as power conversion and drive motors.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 85A | 35mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 100V | 1.8V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
MTW33N10E-VB Detailed Parameter Description
| **Parameter** | **Description** | **Value** |
|------------------------|------------------------|------------------------|
| **Model** | - | MTW33N10E-VB |
| **Package Type** | - | TO-247 |
| **Configuration** | - | Single N-channel MOSFET |
| **Drain-Source Voltage (VDS)** | Maximum Allowable Drain-Source Voltage| 100V |
| **Gate-Source Voltage (VGS)** | Maximum Gate Drive Voltage| ±20V |
| **Turning Voltage (Vth)** | Voltage Required for Gate Turning On| 1.8V |
| **On-Resistance RDS(ON)** | Resistance at VGS = 10V| 35mΩ |
| **Drain Current (ID)** | Maximum Continuous Drain Current| 85A |
| **Technology** | - | Trench Technology|
| **Operating Temperature Range** | Ambient Operating Temperature| -55°C ~ +150°C |
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| **Parameter** | **Description** | **Value** |
|------------------------|------------------------|------------------------|
| **Model** | - | MTW33N10E-VB |
| **Package Type** | - | TO-247 |
| **Configuration** | - | Single N-channel MOSFET |
| **Drain-Source Voltage (VDS)** | Maximum Allowable Drain-Source Voltage| 100V |
| **Gate-Source Voltage (VGS)** | Maximum Gate Drive Voltage| ±20V |
| **Turning Voltage (Vth)** | Voltage Required for Gate Turning On| 1.8V |
| **On-Resistance RDS(ON)** | Resistance at VGS = 10V| 35mΩ |
| **Drain Current (ID)** | Maximum Continuous Drain Current| 85A |
| **Technology** | - | Trench Technology|
| **Operating Temperature Range** | Ambient Operating Temperature| -55°C ~ +150°C |
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Domain and module applications：
MTW33N10E-VB Applications and Module Examples
1. **Power Adapter**
MTW33N10E-VB can be used in power adapters for efficient power conversion, capable of withstanding high currents and keeping heat dissipation low, ensuring stable operation under high loads.
2. **Motor Drive**
In motor drive circuits, this MOSFET can be used to control the start and operation of DC and AC motors, suitable for motor control in industrial automation, home appliances, and electric vehicles.
3. **Switching Power Supply**
This device plays a key role in switching power supply modules, enabling efficient power conversion, suitable for a variety of consumer electronics and power electronics.
4. **Inverter**
In solar inverters, MTW33N10E-VB can achieve efficient DC to AC power conversion, suitable for power management in renewable energy systems.
5. **LED Driver**
This MOSFET can also be used in LED driver circuits to provide stable current control, ensuring high efficiency and long life of LED lighting systems.
Through these application examples, the MTW33N10E-VB demonstrates its wide applicability in a variety of high current and medium voltage applications, suitable for power management systems that require high efficiency and reliability.
1. **Power Adapter**
MTW33N10E-VB can be used in power adapters for efficient power conversion, capable of withstanding high currents and keeping heat dissipation low, ensuring stable operation under high loads.
2. **Motor Drive**
In motor drive circuits, this MOSFET can be used to control the start and operation of DC and AC motors, suitable for motor control in industrial automation, home appliances, and electric vehicles.
3. **Switching Power Supply**
This device plays a key role in switching power supply modules, enabling efficient power conversion, suitable for a variety of consumer electronics and power electronics.
4. **Inverter**
In solar inverters, MTW33N10E-VB can achieve efficient DC to AC power conversion, suitable for power management in renewable energy systems.
5. **LED Driver**
This MOSFET can also be used in LED driver circuits to provide stable current control, ensuring high efficiency and long life of LED lighting systems.
Through these application examples, the MTW33N10E-VB demonstrates its wide applicability in a variety of high current and medium voltage applications, suitable for power management systems that require high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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