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MTW32N25-VB Product details
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Product Introduction
**MTW32N25-VB** is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage and high current applications. Its drain-source voltage (VDS) is up to 250V, the maximum gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 3.5V. Thanks to the advanced Trench technology, the device has an on-resistance (RDS(ON)) of only 40mΩ at VGS = 10V and can carry a drain current of up to 60A. This low on-resistance and high current capability give the MTW32N25-VB excellent performance in power conversion and switching applications.
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**MTW32N25-VB** is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage and high current applications. Its drain-source voltage (VDS) is up to 250V, the maximum gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 3.5V. Thanks to the advanced Trench technology, the device has an on-resistance (RDS(ON)) of only 40mΩ at VGS = 10V and can carry a drain current of up to 60A. This low on-resistance and high current capability give the MTW32N25-VB excellent performance in power conversion and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 250V | 3.5V | 60A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Detailed parameter description
- **Model**: MTW32N25-VB
- **Package type**: TO247
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- @ VGS = 10V: 40mΩ
- **Maximum drain current (ID)**: 60A
- **Technology**: Trench
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- **Model**: MTW32N25-VB
- **Package type**: TO247
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- @ VGS = 10V: 40mΩ
- **Maximum drain current (ID)**: 60A
- **Technology**: Trench
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Domain and module applications：
Applications and modules
The excellent performance of the MTW32N25-VB makes it widely used in multiple fields and modules, including:
1. **Switching Power Supply**: In a switching power supply (SMPS), this MOSFET can be used for efficient power conversion, providing high voltage and high current support for efficient energy management and reduced power consumption.
2. **Motor Drive**: With its high current carrying capacity, the MTW32N25-VB is suitable for motor drive circuits and is widely used in power tools, electric vehicles and industrial automation equipment to provide reliable power supply and control.
3. **Inverters and Power Electronics**: This MOSFET also performs well in inverters and other power electronic devices, capable of efficiently converting DC and AC, and is suitable for renewable energy systems such as solar inverters and wind turbines.
4. **LED lighting control**: Due to its high efficiency and low on-resistance, the MTW32N25-VB is suitable for driving and controlling LED lighting systems, helping to improve the energy efficiency and service life of lighting systems.
5. **Automotive electronics**: In modern automotive electronic systems, the MTW32N25-VB can be used in power management and control modules to support various automotive functions such as power steering, window control and electric seat adjustment, improving the electrical performance and reliability of the entire vehicle.
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As a high-performance N-channel MOSFET, the MTW32N25-VB has superior technical characteristics and wide applicability, making it of great value in various high-voltage and high-current applications, and is a key component in modern power electronics design.
The excellent performance of the MTW32N25-VB makes it widely used in multiple fields and modules, including:
1. **Switching Power Supply**: In a switching power supply (SMPS), this MOSFET can be used for efficient power conversion, providing high voltage and high current support for efficient energy management and reduced power consumption.
2. **Motor Drive**: With its high current carrying capacity, the MTW32N25-VB is suitable for motor drive circuits and is widely used in power tools, electric vehicles and industrial automation equipment to provide reliable power supply and control.
3. **Inverters and Power Electronics**: This MOSFET also performs well in inverters and other power electronic devices, capable of efficiently converting DC and AC, and is suitable for renewable energy systems such as solar inverters and wind turbines.
4. **LED lighting control**: Due to its high efficiency and low on-resistance, the MTW32N25-VB is suitable for driving and controlling LED lighting systems, helping to improve the energy efficiency and service life of lighting systems.
5. **Automotive electronics**: In modern automotive electronic systems, the MTW32N25-VB can be used in power management and control modules to support various automotive functions such as power steering, window control and electric seat adjustment, improving the electrical performance and reliability of the entire vehicle.
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As a high-performance N-channel MOSFET, the MTW32N25-VB has superior technical characteristics and wide applicability, making it of great value in various high-voltage and high-current applications, and is a key component in modern power electronics design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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