MTW26N15E-VB Product details
Product introduction:
MTW26N15E-VB is a high-performance **single N-channel MOSFET**, using **TO-247 package**, which can operate efficiently at **150V** drain-source voltage (V_DS), suitable for applications requiring high current and high voltage. Its gate turn-on voltage (V_th) is **3V**, and when the gate voltage (V_GS) is **10V**, the on-resistance (R_DS(ON)) is **12mΩ**, which makes the MOSFET have extremely low conduction loss and efficient energy transfer during operation. The maximum drain current (I_D) can reach **150A**, which is very suitable for use in high-power applications. MTW26N15E-VB adopts **Trench technology** to ensure its reliability and stability under high temperature and high-frequency operation, and is widely used in power management, inverters, motor drives and other fields.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 150V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
| **Parameter** | **Description** | **Value** |
|-------------------------|------------------------------------------------|--------------------|
| **Package Type** | TO-247 Package| - |
| **Polarity** | Single N-channel| - |
| **V_DS** | Drain-Source Voltage| 150V |
| **V_GS** | Gate-Source Voltage Range| ±20V |
| **V_th** | Gate Turn-On Voltage| 3V |
| **R_DS(ON)** | On-Resistance (V_GS = 10V) | 12mΩ |
| **I_D** | Maximum Drain Current| 150A |
| **Power Dissipation (P_D)** | Maximum Power Dissipation Capability (at 25°C) | 100W |
| **Operating temperature range** | Allowable junction temperature range| -55°C ~ 150°C |
| **Technology** | Trench technology| - |
| **Package pins** | 3 pins, suitable for soldering and heat sink mounting| - |
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Domain and module applications:
1. **Power conversion and management**
MTW26N15E-VB is widely used in **switching power supplies (SMPS)** and **DC-DC converters** to improve conversion efficiency and reduce energy loss. Its high current carrying capacity and low on-resistance make it very suitable for use in high-efficiency power modules to improve the efficiency of the overall system.
2. **Inverters and renewable energy systems**
In **solar inverters** and wind energy systems, this MOSFET can be used as the main switching element to effectively manage and control the conversion of DC to AC, ensuring stability and reliability under high voltage and high current conditions.
3. **Motor drive and control**
MTW26N15E-VB is suitable for **motor control** systems such as inverters and servo motor drives, providing efficient current control and reverse current management to ensure smooth operation of motors under various load conditions.
4. **High-power amplifiers and audio systems**
In high-power audio amplifiers, the MTW26N15E-VB can effectively manage signal current, reduce signal distortion, and improve the overall performance of the audio system, making it an ideal choice for audio equipment.
5. **Automotive electronics and high-voltage applications**
This MOSFET can also be used in power management systems for **electric vehicles** and **hybrid vehicles**, capable of handling high voltage and high current to ensure safe operation under extreme conditions.
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