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MTW23N25E-VB Product details
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1. MTW23N25E-VB Product Introduction
MTW23N25E-VB is a high-efficiency single N-type MOSFET in a **TO247** package, designed for high voltage and high current applications. The device has a drain-source voltage (VDS) of up to **250V**, which is very suitable for power conversion and high-voltage switching applications. Its maximum drain current (ID) is **60A**, and its on-resistance is only **40mΩ** at a gate voltage of **10V**, which gives it excellent performance in high-power applications. In addition, the MTW23N25E-VB uses **Trench technology**, which provides lower switching losses and higher efficiency, making it an ideal choice for modern power electronic equipment, especially in the fields of power management and industrial control.
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MTW23N25E-VB is a high-efficiency single N-type MOSFET in a **TO247** package, designed for high voltage and high current applications. The device has a drain-source voltage (VDS) of up to **250V**, which is very suitable for power conversion and high-voltage switching applications. Its maximum drain current (ID) is **60A**, and its on-resistance is only **40mΩ** at a gate voltage of **10V**, which gives it excellent performance in high-power applications. In addition, the MTW23N25E-VB uses **Trench technology**, which provides lower switching losses and higher efficiency, making it an ideal choice for modern power electronic equipment, especially in the fields of power management and industrial control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 250V | 3.5V | 60A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 250V | 3.5V | 60A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. MTW23N25E-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-----------------------------|----------------------------|------------------------------------------|
| **Package type** | TO247 | Suitable for high power and high temperature environments, with good heat dissipation performance|
| **Channel type** | Single N-Channel | Control current flows from drain to source|
| **Drain-source voltage VDS** | 250V | Maximum withstand voltage, suitable for high voltage applications|
| **Gate-source voltage VGS** | ±20V | Maximum gate-to-source voltage|
| **Turn-on threshold Vth** | 3.5V | Minimum gate voltage required to turn on MOSFET|
| **On-resistance RDS(ON)** | 40mΩ @ VGS = 10V | On-resistance at gate voltage 10V|
| **Continuous drain current ID** | 60A | Maximum continuous current capability|
| **Transient peak current** | 120A | Supports high current surge for a short period of time|
| **Technology type** | Trench | Low conduction loss and high efficiency structure|
| **Operating temperature range** | -55°C ~ +150°C | Able to operate stably in extreme temperature environments|
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| **Parameter** | **Value** | **Description** |
|-----------------------------|----------------------------|------------------------------------------|
| **Package type** | TO247 | Suitable for high power and high temperature environments, with good heat dissipation performance|
| **Channel type** | Single N-Channel | Control current flows from drain to source|
| **Drain-source voltage VDS** | 250V | Maximum withstand voltage, suitable for high voltage applications|
| **Gate-source voltage VGS** | ±20V | Maximum gate-to-source voltage|
| **Turn-on threshold Vth** | 3.5V | Minimum gate voltage required to turn on MOSFET|
| **On-resistance RDS(ON)** | 40mΩ @ VGS = 10V | On-resistance at gate voltage 10V|
| **Continuous drain current ID** | 60A | Maximum continuous current capability|
| **Transient peak current** | 120A | Supports high current surge for a short period of time|
| **Technology type** | Trench | Low conduction loss and high efficiency structure|
| **Operating temperature range** | -55°C ~ +150°C | Able to operate stably in extreme temperature environments|
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Domain and module applications：
3. Application fields and module examples
MTW23N25E-VB is widely used in the following fields and modules due to its excellent performance:
1. **Switching power supply**
- In the design of switching power supply (SMPS), MTW23N25E-VB can be used as an efficient switching element to ensure high efficiency and low power consumption in the power conversion process, and is suitable for power management of various electronic devices.
2. **DC-DC converter**
- This MOSFET can be used as a switch in the DC-DC converter to help achieve high-efficiency voltage regulation, and is widely used in battery-powered devices and renewable energy systems.
3. **Motor control**
- In the motor drive system, MTW23N25E-VB can be used for current control to drive DC motors and stepper motors through efficient switching operations, improving the dynamic response and energy utilization of the system.
4. **Industrial Automation**
- The device plays an important role in the control circuits of industrial equipment, providing reliable switching and current management to ensure efficient operation and stability of the equipment.
5. **LED Lighting Control**
- In LED drive circuits, the MTW23N25E-VB can be used as a current control switch to improve the efficiency of lighting systems and extend the life of lamps.
6. **Inverter Applications**
- This MOSFET is suitable for use in inverter designs to convert DC to AC, supporting power conversion and energy storage solutions.
Through these applications, the MTW23N25E-VB provides an efficient and reliable solution to meet the power and performance needs of modern power electronics.
MTW23N25E-VB is widely used in the following fields and modules due to its excellent performance:
1. **Switching power supply**
- In the design of switching power supply (SMPS), MTW23N25E-VB can be used as an efficient switching element to ensure high efficiency and low power consumption in the power conversion process, and is suitable for power management of various electronic devices.
2. **DC-DC converter**
- This MOSFET can be used as a switch in the DC-DC converter to help achieve high-efficiency voltage regulation, and is widely used in battery-powered devices and renewable energy systems.
3. **Motor control**
- In the motor drive system, MTW23N25E-VB can be used for current control to drive DC motors and stepper motors through efficient switching operations, improving the dynamic response and energy utilization of the system.
4. **Industrial Automation**
- The device plays an important role in the control circuits of industrial equipment, providing reliable switching and current management to ensure efficient operation and stability of the equipment.
5. **LED Lighting Control**
- In LED drive circuits, the MTW23N25E-VB can be used as a current control switch to improve the efficiency of lighting systems and extend the life of lamps.
6. **Inverter Applications**
- This MOSFET is suitable for use in inverter designs to convert DC to AC, supporting power conversion and energy storage solutions.
Through these applications, the MTW23N25E-VB provides an efficient and reliable solution to meet the power and performance needs of modern power electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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