中文
English
MTW16N40E-VB Product details
Back to previous pageProduct introduction：
1. MTW16N40E-VB Product Introduction
MTW16N40E-VB is a high-voltage **N-channel power MOSFET** in a **TO-247 package**, designed for high-voltage power management and switching applications. Its **drain-source voltage (VDS)** is as high as **500V** and can carry **40A** of continuous current. The device utilizes advanced **SJ_Multi-EPI technology** to provide excellent current carrying capability and low on-resistance, **80mΩ** (at **VGS = 10V**), thereby significantly reducing switching losses. The high reliability and efficiency of the MTW16N40E-VB make it suitable for high-voltage and high-power applications.
---
MTW16N40E-VB is a high-voltage **N-channel power MOSFET** in a **TO-247 package**, designed for high-voltage power management and switching applications. Its **drain-source voltage (VDS)** is as high as **500V** and can carry **40A** of continuous current. The device utilizes advanced **SJ_Multi-EPI technology** to provide excellent current carrying capability and low on-resistance, **80mΩ** (at **VGS = 10V**), thereby significantly reducing switching losses. The high reliability and efficiency of the MTW16N40E-VB make it suitable for high-voltage and high-power applications.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. MTW16N40E-VB Detailed Parameters
| **Parameter** | **Symbol** | **Value** | **Description** |
|------------------------|-----------|-----------------------------|-------------------------------|
| **Drain-Source Voltage** | VDS | 500V | Maximum Withstand Voltage|
| **Gate-Source Voltage** | VGS | ±30V | Maximum Gate-Source Voltage Range|
| **Turning Threshold Voltage** | Vth | 3.8V | Minimum Voltage for MOSFET to Start Conducting|
| **On-Resistance** | RDS(ON) | 80mΩ @ VGS = 10V | On-Resistance in On State|
| **Maximum Drain Current** | ID | 40A | Maximum Current in Continuous Conducting|
| **Peak Pulse Current** | IDM | 80A | Maximum Current Carried in Short-Time Pulse|
| **Power dissipation** | Ptot | 100W | Maximum power dissipation|
| **Operating junction temperature range** | Tj | -55°C ~ 150°C | Safe operating temperature range|
| **Package type** | - | TO-247 | Package that provides good heat dissipation|
| **Technology type** | - | SJ_Multi-EPI | Structure that provides high current and low conduction loss|
---
| **Parameter** | **Symbol** | **Value** | **Description** |
|------------------------|-----------|-----------------------------|-------------------------------|
| **Drain-Source Voltage** | VDS | 500V | Maximum Withstand Voltage|
| **Gate-Source Voltage** | VGS | ±30V | Maximum Gate-Source Voltage Range|
| **Turning Threshold Voltage** | Vth | 3.8V | Minimum Voltage for MOSFET to Start Conducting|
| **On-Resistance** | RDS(ON) | 80mΩ @ VGS = 10V | On-Resistance in On State|
| **Maximum Drain Current** | ID | 40A | Maximum Current in Continuous Conducting|
| **Peak Pulse Current** | IDM | 80A | Maximum Current Carried in Short-Time Pulse|
| **Power dissipation** | Ptot | 100W | Maximum power dissipation|
| **Operating junction temperature range** | Tj | -55°C ~ 150°C | Safe operating temperature range|
| **Package type** | - | TO-247 | Package that provides good heat dissipation|
| **Technology type** | - | SJ_Multi-EPI | Structure that provides high current and low conduction loss|
---
Domain and module applications：
3. Application fields and module examples
1. **High-voltage power supply**
- MTW16N40E-VB is widely used in **high-voltage power supply**. Its high drain-source voltage and low conduction loss make it an ideal choice for DC-DC converters and AC-DC adapters, providing stable output under high voltage conditions.
2. **Industrial equipment**
- In **industrial automation and control systems**, MTW16N40E-VB is suitable for motor control and drive, and can efficiently switch high-power motors to ensure high efficiency and reliability.
3. **Renewable energy system**
- In **solar inverters** and **wind energy conversion systems**, this MOSFET can be used for efficient current control, capable of withstanding the high voltage output of photovoltaic panels or wind turbines, thereby improving the efficiency of the entire energy system.
4. **Power Electronic Conversion**
- MTW16N40E-VB is suitable for various **power electronic applications**, such as **inverters** and **rectifiers**, where its high voltage capability and fast switching characteristics ensure efficient and accurate power conversion.
5. **Electric Vehicles**
- In **electric vehicle** chargers and power management systems, the high voltage and high current capabilities of this MOSFET make it an ideal choice for efficient charging, supporting fast charging functions and improving charging efficiency.
The high performance and wide applicability of the MTW16N40E-VB make it a key component in high voltage, high power applications, meeting electrical performance requirements in a variety of harsh environments.
1. **High-voltage power supply**
- MTW16N40E-VB is widely used in **high-voltage power supply**. Its high drain-source voltage and low conduction loss make it an ideal choice for DC-DC converters and AC-DC adapters, providing stable output under high voltage conditions.
2. **Industrial equipment**
- In **industrial automation and control systems**, MTW16N40E-VB is suitable for motor control and drive, and can efficiently switch high-power motors to ensure high efficiency and reliability.
3. **Renewable energy system**
- In **solar inverters** and **wind energy conversion systems**, this MOSFET can be used for efficient current control, capable of withstanding the high voltage output of photovoltaic panels or wind turbines, thereby improving the efficiency of the entire energy system.
4. **Power Electronic Conversion**
- MTW16N40E-VB is suitable for various **power electronic applications**, such as **inverters** and **rectifiers**, where its high voltage capability and fast switching characteristics ensure efficient and accurate power conversion.
5. **Electric Vehicles**
- In **electric vehicle** chargers and power management systems, the high voltage and high current capabilities of this MOSFET make it an ideal choice for efficient charging, supporting fast charging functions and improving charging efficiency.
The high performance and wide applicability of the MTW16N40E-VB make it a key component in high voltage, high power applications, meeting electrical performance requirements in a variety of harsh environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
