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MTW14N50E-VB Product details
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1. MTW14N50E-VB Product Introduction
The MTW14N50E-VB is a high-performance single N-channel MOSFET in a **TO247** package, designed for high-voltage applications. The device has a drain-source voltage (V_DS) of up to **500V**, enabling it to operate stably in harsh working environments. Its gate-source voltage (V_GS) can reach a maximum of ±30V, ensuring reliable turn-on under a variety of driving conditions. The turn-on voltage (V_th) of the MTW14N50E-VB is **3.8V**, which can effectively conduct under relatively high driving voltages. The device's on-resistance (R_DS(ON)) is **80mΩ** at V_GS = 10V, which helps reduce conduction losses and thus improve overall efficiency. Its maximum drain current (I_D) is **40A**, making it suitable for a variety of high-load applications. MTW14N50E-VB adopts **SJ_Multi-EPI technology**, which excels in improving switching speed and reducing switching loss, and is widely used in industrial and consumer electronic devices.
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The MTW14N50E-VB is a high-performance single N-channel MOSFET in a **TO247** package, designed for high-voltage applications. The device has a drain-source voltage (V_DS) of up to **500V**, enabling it to operate stably in harsh working environments. Its gate-source voltage (V_GS) can reach a maximum of ±30V, ensuring reliable turn-on under a variety of driving conditions. The turn-on voltage (V_th) of the MTW14N50E-VB is **3.8V**, which can effectively conduct under relatively high driving voltages. The device's on-resistance (R_DS(ON)) is **80mΩ** at V_GS = 10V, which helps reduce conduction losses and thus improve overall efficiency. Its maximum drain current (I_D) is **40A**, making it suitable for a variety of high-load applications. MTW14N50E-VB adopts **SJ_Multi-EPI technology**, which excels in improving switching speed and reducing switching loss, and is widely used in industrial and consumer electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. MTW14N50E-VB Detailed Parameters
| **Parameter** | **Value** | **Description** |
|-----------------------------|------------------------------|---------------------------------|
| **Package Type** | TO247 | Package suitable for high power heat dissipation|
| **Configuration** | Single N-Channel | Single-channel N-type MOSFET |
| **Drain-Source Voltage (V_DS)** | 500V | Maximum voltage between drain and source|
| **Gate-Source Voltage (V_GS)** | ±30V | Maximum voltage between gate and source|
| **Turning On Voltage (V_th)** | 3.8V | Gate-Source Voltage when MOSFET is turned on|
| **On-Resistance (R_DS(ON))** | 80mΩ @ V_GS=10V | Drain-Source Resistance in On State, Affects Conducting Efficiency|
| **Maximum drain current (I_D)** | 40A | Maximum current supported during continuous operation|
| **Technology** | SJ_Multi-EPI | Technology to reduce switching losses and improve conduction performance|
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| **Parameter** | **Value** | **Description** |
|-----------------------------|------------------------------|---------------------------------|
| **Package Type** | TO247 | Package suitable for high power heat dissipation|
| **Configuration** | Single N-Channel | Single-channel N-type MOSFET |
| **Drain-Source Voltage (V_DS)** | 500V | Maximum voltage between drain and source|
| **Gate-Source Voltage (V_GS)** | ±30V | Maximum voltage between gate and source|
| **Turning On Voltage (V_th)** | 3.8V | Gate-Source Voltage when MOSFET is turned on|
| **On-Resistance (R_DS(ON))** | 80mΩ @ V_GS=10V | Drain-Source Resistance in On State, Affects Conducting Efficiency|
| **Maximum drain current (I_D)** | 40A | Maximum current supported during continuous operation|
| **Technology** | SJ_Multi-EPI | Technology to reduce switching losses and improve conduction performance|
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Domain and module applications：
III. MTW14N50E-VB Application Fields and Module Examples
1. **Power Converter**
- MTW14N50E-VB can be widely used in switching power supplies and DC-DC converters. As the main switching element, it provides efficient energy conversion and voltage regulation to meet the power supply requirements of various electronic devices.
- In high-voltage power modules, this MOSFET can effectively reduce power loss and improve the efficiency of the power system.
2. **Industrial Automation**
- This device is suitable for drive and switch applications in industrial automation control systems. It can reliably control loads such as motors, sensors and actuators to ensure stable operation of equipment.
- In inverters, MTW14N50E-VB can be used to adjust motor speed and torque to improve the flexibility and efficiency of industrial production.
3. **Home Appliances and Consumer Electronics**
- In home appliances, the MTW14N50E-VB can be used for high-power power management to control loads such as heating elements, compressors and fans to ensure efficient energy utilization.
- In LED lighting systems, this MOSFET can help control the switching and brightness of lights, improve user experience and save energy.
4. **Automotive Electronics**
- The MTW14N50E-VB is suitable for use in automotive electronic systems, such as battery management systems and power converters, to ensure efficient battery charging and discharging and energy management.
- In hybrid and electric vehicles, this MOSFET helps achieve efficient power conversion and motor drive, improving the energy efficiency and performance of the entire vehicle.
MTW14N50E-VB
1. **Power Converter**
- MTW14N50E-VB can be widely used in switching power supplies and DC-DC converters. As the main switching element, it provides efficient energy conversion and voltage regulation to meet the power supply requirements of various electronic devices.
- In high-voltage power modules, this MOSFET can effectively reduce power loss and improve the efficiency of the power system.
2. **Industrial Automation**
- This device is suitable for drive and switch applications in industrial automation control systems. It can reliably control loads such as motors, sensors and actuators to ensure stable operation of equipment.
- In inverters, MTW14N50E-VB can be used to adjust motor speed and torque to improve the flexibility and efficiency of industrial production.
3. **Home Appliances and Consumer Electronics**
- In home appliances, the MTW14N50E-VB can be used for high-power power management to control loads such as heating elements, compressors and fans to ensure efficient energy utilization.
- In LED lighting systems, this MOSFET can help control the switching and brightness of lights, improve user experience and save energy.
4. **Automotive Electronics**
- The MTW14N50E-VB is suitable for use in automotive electronic systems, such as battery management systems and power converters, to ensure efficient battery charging and discharging and energy management.
- In hybrid and electric vehicles, this MOSFET helps achieve efficient power conversion and motor drive, improving the energy efficiency and performance of the entire vehicle.
MTW14N50E-VB
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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