中文
English
MTP658G6-VB Product details
Back to previous pageProduct introduction：
1. MTP658G6-VB Product Introduction
MTP658G6-VB is a high-performance P-channel power MOSFET in a **SOT23-6 package**, designed for low-voltage, high-performance applications. Its **drain-source voltage (VDS)** can reach **-30V**, and its maximum continuous drain current is **-4.8A**, making it suitable for use in applications that require negative voltage. Based on **Trench technology**, this MOSFET has a low on-resistance of **54mΩ** at **VGS = 4.5V**, and can be reduced to **49mΩ** at **VGS = 10V**. The high performance and compact package design of the MTP658G6-VB make it an ideal choice for a variety of power management and switching applications.
---
MTP658G6-VB is a high-performance P-channel power MOSFET in a **SOT23-6 package**, designed for low-voltage, high-performance applications. Its **drain-source voltage (VDS)** can reach **-30V**, and its maximum continuous drain current is **-4.8A**, making it suitable for use in applications that require negative voltage. Based on **Trench technology**, this MOSFET has a low on-resistance of **54mΩ** at **VGS = 4.5V**, and can be reduced to **49mΩ** at **VGS = 10V**. The high performance and compact package design of the MTP658G6-VB make it an ideal choice for a variety of power management and switching applications.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
II. Detailed parameter description of MTP658G6-VB
| **Parameter** | **Symbol** | **Value** | **Description** |
|------------------------|-----------|-----------------------------|-------------------------------|
| **Drain-source voltage** | VDS | -30V | Maximum withstand voltage|
| **Gate-source voltage** | VGS | ±20V | Maximum gate-to-source voltage range|
| **Turn-on threshold voltage** | Vth | -1.7V | Minimum voltage required for MOSFET to start conducting|
| **On-resistance** | RDS(ON) | 54mΩ @ VGS = 4.5V | MOSFET on resistance|
| | RDS(ON) | 49mΩ @ VGS = 10V | MOSFET on resistance|
| **Maximum drain current** | ID | -4.8A | Maximum current during continuous conduction|
| **Peak pulse current** | IDM | -12A | Maximum current carried during short-duration pulses|
| **Power dissipation** | Ptot | 36W | Maximum power dissipation|
| **Operating junction temperature range** | Tj | -55°C ~ 150°C | Safe operating temperature range|
| **Package type** | - | SOT23-6 | Compact package with good heat dissipation|
| **Technology type** | - | Trench | Structure that provides lower on-resistance|
---
| **Parameter** | **Symbol** | **Value** | **Description** |
|------------------------|-----------|-----------------------------|-------------------------------|
| **Drain-source voltage** | VDS | -30V | Maximum withstand voltage|
| **Gate-source voltage** | VGS | ±20V | Maximum gate-to-source voltage range|
| **Turn-on threshold voltage** | Vth | -1.7V | Minimum voltage required for MOSFET to start conducting|
| **On-resistance** | RDS(ON) | 54mΩ @ VGS = 4.5V | MOSFET on resistance|
| | RDS(ON) | 49mΩ @ VGS = 10V | MOSFET on resistance|
| **Maximum drain current** | ID | -4.8A | Maximum current during continuous conduction|
| **Peak pulse current** | IDM | -12A | Maximum current carried during short-duration pulses|
| **Power dissipation** | Ptot | 36W | Maximum power dissipation|
| **Operating junction temperature range** | Tj | -55°C ~ 150°C | Safe operating temperature range|
| **Package type** | - | SOT23-6 | Compact package with good heat dissipation|
| **Technology type** | - | Trench | Structure that provides lower on-resistance|
---
Domain and module applications：
III. Application fields and module examples
1. **Power management system**
- MTP658G6-VB is widely used in **switching power supplies** and **DC-DC converters**, which can effectively control the conversion and distribution of electric energy. It is suitable for scenarios that require negative voltage to ensure high efficiency and low power consumption.
2. **Consumer electronics**
- This MOSFET is suitable for **smartphone chargers** and **portable power management**. Its compact package design and high efficiency performance can meet the needs of compact electronic devices.
3. **Automotive electronics**
- In **electric vehicles** and **hybrid vehicles**, MTP658G6-VB can be used in **battery management systems**, which can efficiently control the battery charging and discharging process to ensure the safety and reliability of vehicle operation.
4. **LED lighting control**
- Suitable for dimming and switching control in **LED lighting**, the low on-resistance of MOSFET can reduce energy loss and improve overall lighting efficiency.
5. **Industrial Automation**
- In **Programmable Logic Controller (PLC)**, MTP658G6-VB can be used as a switching element to control motors, sensors and other loads to achieve efficient automation control.
The high performance and wide application of MTP658G6-VB make it have important market value in power management, consumer electronics and automotive electronics.
1. **Power management system**
- MTP658G6-VB is widely used in **switching power supplies** and **DC-DC converters**, which can effectively control the conversion and distribution of electric energy. It is suitable for scenarios that require negative voltage to ensure high efficiency and low power consumption.
2. **Consumer electronics**
- This MOSFET is suitable for **smartphone chargers** and **portable power management**. Its compact package design and high efficiency performance can meet the needs of compact electronic devices.
3. **Automotive electronics**
- In **electric vehicles** and **hybrid vehicles**, MTP658G6-VB can be used in **battery management systems**, which can efficiently control the battery charging and discharging process to ensure the safety and reliability of vehicle operation.
4. **LED lighting control**
- Suitable for dimming and switching control in **LED lighting**, the low on-resistance of MOSFET can reduce energy loss and improve overall lighting efficiency.
5. **Industrial Automation**
- In **Programmable Logic Controller (PLC)**, MTP658G6-VB can be used as a switching element to control motors, sensors and other loads to achieve efficient automation control.
The high performance and wide application of MTP658G6-VB make it have important market value in power management, consumer electronics and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
