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MTP29N15E-VB Product details

Product introduction:

1. MTP29N15E-VB Product Introduction
MTP29N15E-VB is a **single N-channel power MOSFET** in **TO220 package**, designed for high voltage and high current applications. Its **maximum drain-source voltage (VDS) is 150V**, with good switching performance and low on-resistance (RDS(ON) = 30mΩ @ VGS = 10V).
This device uses **trench MOSFET technology**, which makes it have low loss when turned on, suitable for high-efficiency power management systems. At the same time, the device's **maximum drain current (ID) is 50A**, which can cope with high current scene requirements, and its **gate voltage (VGS) can reach up to ±20V**, ensuring ample control margin. MTP29N15E-VB has demonstrated excellent performance in various switching power supplies, automotive electronics and industrial control fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 150V 3V 50A 30mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 150V 3V 50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 150V 3V 50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. MTP29N15E-VB Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|------------------------------|-----------------------------|--------------------------------------------|
| **Package Type** | TO220 | Suitable for applications with high heat dissipation requirements|
| **Channel Configuration** | Single N-channel | Only one N-channel MOSFET to improve system integration|
| **Drain-Source Voltage (VDS)** | 150V | Maximum Tolerable Drain-Source Voltage|
| **Gate-Source Voltage (VGS)** | ±20V | Maximum Voltage Range of Control Gate|
| **Turn-On Threshold Voltage (Vth)** | 3V | Minimum Gate-Source Voltage Required to Turn On MOSFET|
| **On-Resistance (RDS(ON))** | 30mΩ @ VGS = 10V | Resistance in the on state, affecting conduction loss|
| **Maximum drain current (ID)** | 50A | Maximum continuous current that the MOSFET can carry|
| **Operating temperature range** | -55°C ~ +175°C | Supports operation in harsh environments|
| **Technology** | Trench | Trench technology provides lower switching losses and higher efficiency|

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Domain and module applications:

III. Application fields and typical module examples of MTP29N15E-VB

1. **Switching Power Supply (SMPS)**
- MTP29N15E-VB is suitable for efficient switching power supply design, especially in DC-DC converters and AC-DC rectifiers. Its low RDS(ON) value reduces conduction losses and improves system efficiency.

2. **Automotive Electronic Systems**
- In automotive applications such as electric power steering systems (EPS), DC motor controllers, and battery management systems (BMS), this MOSFET can achieve stable transmission of large currents while ensuring reliability of high voltage and high temperature resistance.

3. **Industrial Control and Motor Drive**
- MTP29N15E-VB is commonly used in PLC control, industrial automation equipment, and servo motor drive modules. Its high current carrying capacity and high voltage resistance make it suitable for various complex industrial control environments.

4. **Photovoltaic inverters and energy storage**
- In the field of new energy, the device can be used for photovoltaic inverters and switch management of energy storage systems to ensure efficient energy conversion and storage.

5. **UPS (uninterruptible power supply) system**
- In UPS equipment, MOSFET is used in inverter circuits and battery switching modules. The performance of MTP29N15E-VB enables it to work stably in high current and sudden voltage scenarios.

In summary, MTP29N15E-VB has broad application prospects in multiple fields such as **power management, automotive electronics and industrial control** due to its **high voltage, high current and low loss characteristics**.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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