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MTP2603G6-VB Product details
Back to previous pageProduct introduction：
1. MTP2603G6-VB Product Introduction
The MTP2603G6-VB is a single P-channel MOSFET in a small SOT23-6 package, suitable for electronic designs with limited space. It supports a maximum drain-source voltage (V_DS) of **30V** and a gate-source voltage (V_GS) of ±20V, with a continuous drain current capability of -4.8A. This MOSFET is based on **Trench technology**, which gives it excellent performance in on-resistance (R_DS(ON)), ensuring efficient conduction and low power consumption. This makes it excel in applications such as power management and switching circuits.
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The MTP2603G6-VB is a single P-channel MOSFET in a small SOT23-6 package, suitable for electronic designs with limited space. It supports a maximum drain-source voltage (V_DS) of **30V** and a gate-source voltage (V_GS) of ±20V, with a continuous drain current capability of -4.8A. This MOSFET is based on **Trench technology**, which gives it excellent performance in on-resistance (R_DS(ON)), ensuring efficient conduction and low power consumption. This makes it excel in applications such as power management and switching circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
II. Detailed parameter description of MTP2603G6-VB
| **Parameter** | **Value** | **Description** |
|-----------------------------|------------------------------|---------------------------------|
| **Package type** | SOT23-6 | Small package, suitable for compact circuit design|
| **Configuration** | Single P-Channel | Single channel P-type MOSFET |
| **Drain-source voltage (V_DS)** | -30V | Maximum voltage between drain and source|
| **Gate-source voltage (V_GS)** | ±20V | Maximum voltage between gate and source|
| **Turning voltage (V_th)** | -1.7V | Gate-source voltage when MOSFET is turned on|
| **On-resistance (R_DS(ON))** | 54mΩ @ V_GS=4.5V
49mΩ @ V_GS=10V | Drain-source resistance in the on state affects conduction efficiency|
| **Maximum drain current (I_D)** | -4.8A | Maximum current supported during continuous operation|
| **Technology** | Trench | Technology to reduce on-resistance and switching loss|
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| **Parameter** | **Value** | **Description** |
|-----------------------------|------------------------------|---------------------------------|
| **Package type** | SOT23-6 | Small package, suitable for compact circuit design|
| **Configuration** | Single P-Channel | Single channel P-type MOSFET |
| **Drain-source voltage (V_DS)** | -30V | Maximum voltage between drain and source|
| **Gate-source voltage (V_GS)** | ±20V | Maximum voltage between gate and source|
| **Turning voltage (V_th)** | -1.7V | Gate-source voltage when MOSFET is turned on|
| **On-resistance (R_DS(ON))** | 54mΩ @ V_GS=4.5V
49mΩ @ V_GS=10V | Drain-source resistance in the on state affects conduction efficiency|
| **Maximum drain current (I_D)** | -4.8A | Maximum current supported during continuous operation|
| **Technology** | Trench | Technology to reduce on-resistance and switching loss|
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Domain and module applications：
III. MTP2603G6-VB Application Fields and Module Examples
1. **Battery Management System (BMS)**
- MTP2603G6-VB is suitable for charge and discharge management of lithium-ion battery packs, as a protection switch to prevent battery overcharge or over-discharge.
- In the battery protection circuit of mobile devices or power tools, it helps to achieve power control and battery life management.
2. **DC-DC Converter and Voltage Regulator Circuit**
- Suitable for synchronous rectification and low-dropout regulator (LDO), which can improve conversion efficiency and reduce heat loss.
- Applied in the power module of smart home devices to ensure stable voltage output.
3. **Load Switch and Power Distribution System**
- Used in load switch circuits of laptops, routers and consumer electronic devices to achieve power control and energy-saving management.
- Control auxiliary circuits in automotive power modules, such as the power supply of LED lights and in-vehicle infotainment systems.
4. **MOSFET Driver and Logic Level Translation**
- MOSFET driver circuits for logic level control, enabling efficient switching in low voltage logic systems.
- Commonly found in interface modules for microcontrollers and I/O devices to ensure signal integrity.
The compact package, low on-resistance and good current handling capability of the MTP2603G6-VB make it ideal for portable electronics, power management, automotive and industrial applications.
1. **Battery Management System (BMS)**
- MTP2603G6-VB is suitable for charge and discharge management of lithium-ion battery packs, as a protection switch to prevent battery overcharge or over-discharge.
- In the battery protection circuit of mobile devices or power tools, it helps to achieve power control and battery life management.
2. **DC-DC Converter and Voltage Regulator Circuit**
- Suitable for synchronous rectification and low-dropout regulator (LDO), which can improve conversion efficiency and reduce heat loss.
- Applied in the power module of smart home devices to ensure stable voltage output.
3. **Load Switch and Power Distribution System**
- Used in load switch circuits of laptops, routers and consumer electronic devices to achieve power control and energy-saving management.
- Control auxiliary circuits in automotive power modules, such as the power supply of LED lights and in-vehicle infotainment systems.
4. **MOSFET Driver and Logic Level Translation**
- MOSFET driver circuits for logic level control, enabling efficient switching in low voltage logic systems.
- Commonly found in interface modules for microcontrollers and I/O devices to ensure signal integrity.
The compact package, low on-resistance and good current handling capability of the MTP2603G6-VB make it ideal for portable electronics, power management, automotive and industrial applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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