Product introduction：
MTP1N50E-VB Product Introduction
MTP1N50E-VB is a high voltage N-channel MOSFET in TO220 package, designed for power electronics applications. The device has a drain-to-source voltage (VDS) of 650V and a gate drive voltage (VGS) of ±30V, which enables stable operation under high voltage environments. Its gate threshold voltage (Vth) is 3.5V, and it has a low on-resistance (RDS(ON)), which is 3900mΩ (VGS=4.5V) and 3120mΩ (VGS=10V), respectively, which can effectively reduce switching losses and heat generation when the maximum current (ID) is 2A. MTP1N50E-VB adopts planar process technology (Planar Technology), which makes it have high reliability and good thermal performance.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
2A |
|
|
3120mΩ |
Plannar |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
2A |
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
2A |
|
Plannar |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: MTP1N50E-VB
- **Package**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate drive voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 3900mΩ @ VGS = 4.5V
- 3120mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Technology**: Planar process
Domain and module applications：
Applications and Module Examples
MTP1N50E-VB is widely used in a variety of fields and modules, including:
1. **Switching Power Supply**: This MOSFET is suitable for high-efficiency switching power supplies (SMPS), and can work effectively under high voltage and medium current conditions to ensure efficient energy conversion.
2. **Motor Drive**: In motor control applications, MTP1N50E-VB can be used as a switching element, suitable for the drive circuit of small motors, improving the reliability and performance of the system.
3. **Inverter**: Used in applications such as solar inverters, it can operate in high-voltage environments, adapt to complex load conditions, and achieve efficient energy conversion.
4. **LED Drive**: MTP1N50E-VB can also be used in LED drive circuits to provide stable current to ensure long-term stable operation of LEDs.
5. **Power Electronic Switch**: This MOSFET is suitable for use in a variety of power electronic switch applications. It can quickly switch and handle high voltage power supplies to meet the needs of modern power equipment.
With its excellent performance parameters and wide application potential, the MTP1N50E-VB is an ideal choice for designing efficient power electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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