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MTP12N18-VB Product details

Product introduction:

1. MTP12N18-VB Product Introduction

MTP12N18-VB is a **single N-channel power MOSFET**, using **TO220 package**, suitable for high voltage and high current applications. This device has a maximum drain-source voltage (**VDS**) of 200V, a gate-source voltage (**VGS**) of ±20V, and a turn-on voltage (**Vth**) of 3V. When **VGS=10V**, its on-resistance (**RDS(ON)**) is 110mΩ, and it supports a maximum continuous drain current (**ID**) of 30A. Using **Trench technology**, MTP12N18-VB provides excellent switching characteristics and low power consumption, suitable for power management and current control in a variety of industrial and consumer electronic products.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 200V 3V 30A 110mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 200V 3V 30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 200V 3V 30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
II. Detailed parameter description of MTP12N18-VB

| **Parameter** | **Value** | **Description** |
|-------------------------|-------------------------|------------------------------------|
| **Package type** | TO220 | Suitable for circuits with high power heat dissipation requirements|
| **Configuration** | Single N-channel | Single N-channel device|
| **VDS (drain-source voltage)** | 200V | Maximum drain-source voltage that can be tolerated|
| **VGS (gate-source voltage)** | ±20V | Maximum gate voltage range allowed|
| **Vth (turn-on voltage)** | 3V | MOSFET turns on when the gate voltage reaches this value|
| **RDS(ON)@VGS=10V** | 110mΩ | On-resistance at 10V gate voltage|
| **ID (drain current)** | 30A | Maximum continuous drain current |
| **Technology** | Trench | Trench technology reduces switching losses and improves efficiency |

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Domain and module applications:

III. Application fields and module examples of MTP12N18-VB

1. **Power converter (DC-DC Converter)**
MTP12N18-VB is suitable for **DC-DC converter**. Its low on-resistance and high current capability enable it to effectively reduce energy loss during power conversion and improve overall conversion efficiency. It is widely used in industrial power supplies and telecommunications equipment.

2. **Motor drive circuit**
This MOSFET performs well in **motor control modules** and can handle large currents. It is suitable for motor drive systems of power tools and electric vehicles, providing efficient current switching and control.

3. **Battery management system (BMS)**
In **battery management** applications, MTP12N18-VB can be used for current monitoring and protection circuits to ensure safe and efficient operation of lithium batteries, suitable for electric vehicles and energy storage systems.

4. **Inverter**
This device can be used as the main switching element in **inverter** to handle high-frequency current and achieve efficient DC/AC conversion. It is widely used in photovoltaic power generation systems and uninterruptible power supplies (UPS).

5. **Automotive electronics**
MTP12N18-VB is widely used in **automotive electronics**, including car light control, power steering and air conditioning systems, and can maintain stable performance in harsh environments.

6. **Switching mode power supply (SMPS)**
In **switching mode power supply** applications, this MOSFET is used as the main switching device to achieve efficient AC/DC conversion. It is suitable for various household appliances, computers and communication equipment.

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MTP12N18-VB is a high-efficiency N-channel power MOSFET. With its excellent voltage and current characteristics, low conduction loss and high-speed switching capability, it is widely used in various industrial and consumer electronic devices. It is an ideal choice for high-performance power management and current control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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