MTNK2N3-VB Product details
Product introduction:
**MTNK2N3-VB** is a small N-channel MOSFET in a SOT23-3 package, designed for low power and small electronic devices. The device has a maximum drain-source voltage (VDS) of 60V, suitable for medium voltage applications. The gate-source voltage (VGS) range is ±20V, ensuring compatibility with a variety of drive circuits. Its threshold voltage (Vth) is 1.7V, allowing it to be effectively turned on at a lower voltage. The on-resistance (RDS(ON)) is 3100mΩ (@ VGS=4.5V) and 2800mΩ (@ VGS=10V), and the maximum drain current (ID) is 0.3A. MTNK2N3-VB uses Trench technology to provide good switching performance and energy efficiency, suitable for use in space-constrained applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | 2800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N | 60V | 1.7V | 0.3A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N |
| **Parameter** | **Value** |
|-------------------------|------------------|
| **Model** | MTNK2N3-VB |
| **Package** | SOT23-3 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 3100mΩ @ VGS=4.5V, 2800mΩ @ VGS=10V |
| **Drain current (ID)** | 0.3A |
| **Technology** | Trench |
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Domain and module applications:
1. **Portable electronic devices**
MTNK2N3-VB is widely used in portable electronic products such as mobile phones, tablets and wearable devices due to its miniaturization and low power consumption. Its low on-resistance can effectively reduce power consumption and extend battery life.
2. **LED drive circuit**
This MOSFET can be used in the drive circuit of LED lighting equipment, which can efficiently control the switching of LEDs to ensure lighting effects and energy efficiency, and is suitable for use in home and commercial lighting systems.
3. **Power management**
In the power management module, MTNK2N3-VB can be used in applications such as switching power supplies, DC-DC converters and chargers. It can provide stable voltage and current to ensure system reliability and efficiency.
4. **Industrial control system**
The device can also be used in small industrial equipment and automation control systems, such as sensor drive and motor control. Its good switching performance makes it suitable for fast switching and precise control occasions.
5. **Computer peripherals**
In computer peripherals, MTNK2N3-VB can be used for power switches and load switches, such as in printers and external hard disks, to achieve efficient power management and ensure stable operation of the equipment.
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In summary, **MTNK2N3-VB** is an excellent N-channel MOSFET suitable for use in portable electronic devices, LED drivers, power management, industrial control, computer peripherals and other fields. Its miniaturized design and high efficiency make it an ideal choice for modern electronic products.
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