Product introduction：
1. MTNK1N3-VB Product Introduction
MTNK1N3-VB is a **single N-channel power MOSFET**, and its package type is **SOT23-3**, which is very suitable for space-constrained applications. The device has a maximum drain-source voltage (**VDS**) of 60V, a gate-source voltage (**VGS**) range of ±20V, and can operate stably under a variety of operating conditions. The turn-on voltage (**Vth**) is 1.7V, showing good conduction characteristics when driven by low voltage. At VGS=4.5V and VGS=10V, the on-resistance (**RDS(ON)**) is 3100mΩ and 2800mΩ respectively, which means that the device has moderate conduction losses at the corresponding gate voltage. The **Trench technology** of MTNK1N3-VB makes it perform well in high-frequency switching applications and is suitable for a variety of modern electronic devices.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
60V |
20（±V） |
1.7V |
0.3A |
|
|
2800mΩ |
|
2. MTNK1N3-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-------------------------|---------------------------|------------------------------------|
| **Package type** | SOT23-3 | Surface mount package, suitable for miniaturized design|
| **Configuration** | Single N-channel | Single N-channel configuration|
| **VDS (drain-source voltage)** | 60V | Maximum drain-source voltage that can be tolerated|
| **VGS (gate-source voltage)** | ±20V | Maximum gate voltage range allowed|
| **Vth (turn-on voltage)** | 1.7V | MOSFET turns on when the gate voltage reaches this value|
| **RDS(ON)@VGS=4.5V** | 3100mΩ | On-resistance at 4.5V gate voltage|
| **RDS(ON)@VGS=10V** | 2800mΩ | On-resistance at 10V gate voltage|
| **ID(Drain Current)** | 0.3A | Maximum continuous drain current|
| **Technology** | Trench | Trench technology for low voltage and high efficiency applications|
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Domain and module applications：
III. MTNK1N3-VB Application Fields and Module Examples
1. **Low-power switching circuit**
MTDK1N3-VB is suitable for **low-power switching circuit**. Due to its low turn-on voltage and moderate on-resistance, it can effectively provide reliable switching function at low voltage and is suitable for application in battery-powered devices.
2. **Portable devices**
In **portable devices**, MTNK1N3-VB can be used for power management and power switching to help extend the battery life of the device and provide a stable current supply to ensure the normal operation of the device.
3. **LED drive circuit**
This MOSFET can be used as a switching element in the **LED drive circuit** to control the LED on and off and dimming functions. It is suitable for various lighting applications, such as indoor lamps and automotive lights.
4. **Consumer Electronics**
MTDK1N3-VB performs well in **Consumer Electronics** and can be used in power management modules for audio devices, Bluetooth headsets and smartphones to provide stable current and efficient energy conversion.
5. **Home Appliance Control Systems**
The device can also be widely used in **Home Appliance Control Systems** as a power switch and driver element to ensure high efficiency and reliability of home appliances, such as microwave ovens, washing machines and other equipment.
In short, MTNK1N3-VB is a high-performance single N-channel power MOSFET suitable for a variety of high-efficiency power management and switching applications, meeting the needs of modern electronic devices for high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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