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MTD9N10ET4G-VB Product details
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**Product Introduction: MTD9N10ET4G-VB MOSFET**
MTD9N10ET4G-VB is a high-performance **single N-channel MOSFET**, in **TO252 package**, designed for applications requiring high voltage and high current. Its **drain-source voltage (VDS) can reach 100V**, which is very suitable for use in high-voltage power management and switching circuits. Within the **±20V gate-source voltage (VGS)** range, the MOSFET can operate stably and efficiently to ensure the safety and reliability of the circuit.
The **threshold voltage (Vth) of the device is 1.8V**, which can be turned on quickly at a lower gate voltage, thereby improving switching efficiency. Its on-resistance (RDS(ON)) is 114mΩ** at **VGS=10V**, and it can withstand a maximum drain current (ID) of up to **15A**, which is suitable for a variety of power and load management applications. The use of **Trench technology** further improves its conduction performance and enhances its heat dissipation capability, enabling it to operate reliably in a variety of environments.
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MTD9N10ET4G-VB is a high-performance **single N-channel MOSFET**, in **TO252 package**, designed for applications requiring high voltage and high current. Its **drain-source voltage (VDS) can reach 100V**, which is very suitable for use in high-voltage power management and switching circuits. Within the **±20V gate-source voltage (VGS)** range, the MOSFET can operate stably and efficiently to ensure the safety and reliability of the circuit.
The **threshold voltage (Vth) of the device is 1.8V**, which can be turned on quickly at a lower gate voltage, thereby improving switching efficiency. Its on-resistance (RDS(ON)) is 114mΩ** at **VGS=10V**, and it can withstand a maximum drain current (ID) of up to **15A**, which is suitable for a variety of power and load management applications. The use of **Trench technology** further improves its conduction performance and enhances its heat dissipation capability, enabling it to operate reliably in a variety of environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**Detailed parameter description**
| **Parameter** | **Value** | **Description** |
|------------------------|------------------------|----------|
| **Package type** | TO252 | Surface mount package, suitable for high power density applications|
| **Configuration** | Single-N-Channel | Single channel design, suitable for a variety of power switching applications|
| **VDS (drain-source voltage)** | 100V | Maximum drain-source voltage that can be tolerated|
| **VGS (gate-source voltage)** | ±20V | Maximum gate drive voltage|
| **Vth (threshold voltage)** | 1.8V | Minimum gate voltage required to turn on|
| **RDS(ON)@VGS=10V** | 114mΩ | On-resistance at 10V gate drive voltage|
| **ID (drain current)** | 15A | Maximum continuous drain current|
| **Technology** | Trench | Trench technology provides excellent electrical performance and thermal management |
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| **Parameter** | **Value** | **Description** |
|------------------------|------------------------|----------|
| **Package type** | TO252 | Surface mount package, suitable for high power density applications|
| **Configuration** | Single-N-Channel | Single channel design, suitable for a variety of power switching applications|
| **VDS (drain-source voltage)** | 100V | Maximum drain-source voltage that can be tolerated|
| **VGS (gate-source voltage)** | ±20V | Maximum gate drive voltage|
| **Vth (threshold voltage)** | 1.8V | Minimum gate voltage required to turn on|
| **RDS(ON)@VGS=10V** | 114mΩ | On-resistance at 10V gate drive voltage|
| **ID (drain current)** | 15A | Maximum continuous drain current|
| **Technology** | Trench | Trench technology provides excellent electrical performance and thermal management |
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Domain and module applications：
**Application fields and module examples**
1. **Power management**
MTD9N10ET4G-VB is widely used in switching power supplies and DC-DC converters as an efficient switching element to adjust voltage and current output to ensure high efficiency and stability of the power supply.
2. **Power tools**
This MOSFET is very suitable for the power management system of power tools, which can provide high current control to ensure efficient operation of the tools under various loads and enhance their performance and safety.
3. **LED drive**
MTD9N10ET4G-VB can be used in LED drive circuits to accurately control the working state of LEDs. It is suitable for smart lighting and backlight applications to improve the service life and efficiency of LEDs.
4. **Motor control**
In motor control applications, the device can be precisely controlled as a switching element. It is suitable for motor drive systems such as home appliances and industrial automation equipment to provide efficient motor control and operation stability.
5. **Charger and battery management system**
This MOSFET can be used as a switch in the charger circuit to ensure efficient and safe battery charging. It is suitable for the management system of lithium batteries and other rechargeable batteries, and meets the needs of various electronic devices for stable power supply.
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With its excellent electrical performance and wide range of applications, MTD9N10ET4G-VB is an indispensable key component in modern power supply and control systems, and is suitable for a variety of power supply and load management design requirements.
1. **Power management**
MTD9N10ET4G-VB is widely used in switching power supplies and DC-DC converters as an efficient switching element to adjust voltage and current output to ensure high efficiency and stability of the power supply.
2. **Power tools**
This MOSFET is very suitable for the power management system of power tools, which can provide high current control to ensure efficient operation of the tools under various loads and enhance their performance and safety.
3. **LED drive**
MTD9N10ET4G-VB can be used in LED drive circuits to accurately control the working state of LEDs. It is suitable for smart lighting and backlight applications to improve the service life and efficiency of LEDs.
4. **Motor control**
In motor control applications, the device can be precisely controlled as a switching element. It is suitable for motor drive systems such as home appliances and industrial automation equipment to provide efficient motor control and operation stability.
5. **Charger and battery management system**
This MOSFET can be used as a switch in the charger circuit to ensure efficient and safe battery charging. It is suitable for the management system of lithium batteries and other rechargeable batteries, and meets the needs of various electronic devices for stable power supply.
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With its excellent electrical performance and wide range of applications, MTD9N10ET4G-VB is an indispensable key component in modern power supply and control systems, and is suitable for a variety of power supply and load management design requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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