MTD9N10E1-VB Product details
Product introduction:
**MTD9N10E1-VB** is a high-efficiency single N-channel MOSFET in a **TO252 package**, designed to meet the needs of high-voltage and high-current applications. Its **drain-source voltage (VDS)** can reach **100V**, making it ideal for high-voltage power management and switching applications. The device can withstand a maximum continuous drain current (ID) of **15A**, ensuring its stable operation under various load conditions. **MTD9N10E1-VB** has an on-resistance of **114mΩ** at **VGS=10V**, which means it has extremely low energy loss in the on state, greatly improving the energy efficiency of the system. Combined with its **Trench technology**, this MOSFET performs well in fast switching operations and is ideal for high-frequency applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 114mΩ @ VGS = 10V
- **Maximum continuous leakage current (ID)**: 15A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to 150°C
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Domain and module applications:
1. **Power management**: MTD9N10E1-VB can be widely used in switching power supplies and DC-DC converters. It can withstand input voltages up to **100V** and is very suitable for power management systems in industrial equipment, consumer electronics and communication equipment, improving energy conversion efficiency.
2. **Motor drive**: In motor control, this MOSFET can be used as a switching element and is suitable for driving DC motors and stepper motors to achieve precise control of motor speed and torque. It is widely used in automation equipment and household appliances to improve their working efficiency.
3. **LED lighting**: This MOSFET is suitable for high-power LED drive circuits and can work stably under high voltage and high current conditions. It is widely used in commercial lighting and automotive lighting systems to ensure high efficiency and long life of LEDs.
4. **Automotive electronics**: MTD9N10E1-VB can also be used as a power switch in automotive electronic systems, suitable for electric power steering, car audio and other smart car devices, providing reliable power management.
5. **Consumer electronics**: This MOSFET is suitable for various consumer electronic products, such as power management and load switching in mobile phones, tablets and notebook computers, which can improve the energy efficiency of products and extend battery life.
In summary, MTD9N10E1-VB is a powerful and efficient N-channel MOSFET, suitable for power management, motor drive and LED lighting and other fields, which can improve the overall performance and efficiency of electronic devices.
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