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MTD8N06ET4G-VB Product details
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MTD8N06ET4G-VB Product Introduction
MTD8N06ET4G-VB is a high-efficiency N-channel MOSFET in TO252 package, designed for high current and medium voltage applications. The MOSFET has a maximum drain-source voltage (VDS) of 60V and supports a gate-source voltage (VGS) of ±20V, making it perform well in a variety of power management and switching applications. The threshold voltage (Vth) of the MTD8N06ET4G-VB is 1.7V, ensuring fast turn-on at a lower voltage. At the same time, its on-resistance (RDS(ON)) is 85mΩ at VGS=4.5V and 73mΩ at VGS=10V, providing excellent current conduction capability and suitable for high-efficiency applications.
MTD8N06ET4G-VB is a high-efficiency N-channel MOSFET in TO252 package, designed for high current and medium voltage applications. The MOSFET has a maximum drain-source voltage (VDS) of 60V and supports a gate-source voltage (VGS) of ±20V, making it perform well in a variety of power management and switching applications. The threshold voltage (Vth) of the MTD8N06ET4G-VB is 1.7V, ensuring fast turn-on at a lower voltage. At the same time, its on-resistance (RDS(ON)) is 85mΩ at VGS=4.5V and 73mΩ at VGS=10V, providing excellent current conduction capability and suitable for high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: MTD8N06ET4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 60V
- **VGS**: ±20V
- **Vth**: 1.7V
- **RDS(ON)**:
- 85mΩ (at VGS=4.5V)
- 73mΩ (at VGS=10V)
- **ID**: 18A
- **Technology**: Trench
- **Model**: MTD8N06ET4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 60V
- **VGS**: ±20V
- **Vth**: 1.7V
- **RDS(ON)**:
- 85mΩ (at VGS=4.5V)
- 73mΩ (at VGS=10V)
- **ID**: 18A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
MTD8N06ET4G-VB is widely used in many fields, including:
1. **Power management**: This MOSFET is used as the main switching element in DC-DC converters and switching power supplies, which can effectively reduce energy loss and improve power conversion efficiency.
2. **Motor drive**: In motor control applications, MTD8N06ET4G-VB can provide high current support and is suitable for use as a drive switch for DC motors or stepper motors, ensuring fast response and stable performance.
3. **LED lighting**: In LED drive circuits, this MOSFET can effectively control the switching of LEDs and provide stable brightness, and is widely used in lighting control and dimming systems.
4. **Portable electronic devices**: In the charging and battery management systems of mobile phones, tablets and other devices, MTD8N06ET4G-VB is used as a switching element to achieve an efficient charging process.
5. **Automotive electronics**: This MOSFET is also widely used in automotive power management, such as battery management and motor drive, to ensure efficient and stable operation of automotive electronic systems.
In summary, MTD8N06ET4G-VB has become an ideal choice for many application fields due to its high performance and adaptability.
MTD8N06ET4G-VB is widely used in many fields, including:
1. **Power management**: This MOSFET is used as the main switching element in DC-DC converters and switching power supplies, which can effectively reduce energy loss and improve power conversion efficiency.
2. **Motor drive**: In motor control applications, MTD8N06ET4G-VB can provide high current support and is suitable for use as a drive switch for DC motors or stepper motors, ensuring fast response and stable performance.
3. **LED lighting**: In LED drive circuits, this MOSFET can effectively control the switching of LEDs and provide stable brightness, and is widely used in lighting control and dimming systems.
4. **Portable electronic devices**: In the charging and battery management systems of mobile phones, tablets and other devices, MTD8N06ET4G-VB is used as a switching element to achieve an efficient charging process.
5. **Automotive electronics**: This MOSFET is also widely used in automotive power management, such as battery management and motor drive, to ensure efficient and stable operation of automotive electronic systems.
In summary, MTD8N06ET4G-VB has become an ideal choice for many application fields due to its high performance and adaptability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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