MTD6N20T4G-VB Product details
Product introduction:
MTD6N20T4G-VB is a high-performance **single N-channel** MOSFET in **TO252 package**, designed for high voltage applications. The device has a **200V** drain-source voltage (VDS) and **±20V** gate-source voltage (VGS), and its threshold voltage is **3V**. At **VGS = 10V**, the on-resistance (RDS(ON)) of this MOSFET is **245mΩ**, and the maximum drain current (ID) is **10A**. MTD6N20T4G-VB uses **Trench technology**, with its low on-resistance and high switching speed, it is very suitable for power management, lighting and other high power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| Parameters | Specifications |
|--------------------|--------------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-Channel |
| **Drain-Source Voltage (VDS)** | 200 V |
| **Gate-Source Voltage (VGS)** | ±20 V |
| **Threshold Voltage (Vth)** | 3 V |
| **On-Resistance (RDS(ON))** | 245 mΩ @ VGS = 10 V |
| **Drain Current (ID)** | 10 A |
| **Technology** | Trench |
MTD6N20T4G-VB is suitable for a variety of high voltage applications with its good conductive properties and reliability, ensuring the performance and efficiency of the equipment.
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Domain and module applications:
1. **Power management**
MTD6N20T4G-VB is widely used in the field of power management, especially in high voltage DC-DC converters and power regulation modules, which can effectively convert and regulate voltage to ensure the stability and efficiency of the power system.
2. **Switching power supply (SMPS)**
This MOSFET is suitable for the design of switching power supplies, especially in high-frequency switching applications, which can achieve efficient energy conversion and is widely used in computer power supplies, chargers and other consumer electronic products.
3. **LED drive circuit**
MTD6N20T4G-VB is suitable for LED lighting drive circuits, which can efficiently regulate the current of LEDs and provide stable brightness output. It is widely used in commercial lighting, outdoor lighting and home lighting systems.
4. **Motor drive**
This MOSFET can be used for motor drive applications, suitable for the control of DC motors and stepper motors, and can provide sufficient current support. It is widely used in power tools, automation equipment and robotics.
5. **Industrial Control**
MTD6N20T4G-VB is also used in the field of industrial control, including power management and signal conditioning in various industrial equipment to ensure the efficiency and reliability of the system.
Through its superior performance, MTD6N20T4G-VB becomes an ideal choice in high voltage applications, providing support for the efficient operation of various electronic devices.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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