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MTD6N20E-VB Product details
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MTD6N20E-VB Product Introduction
MTD6N20E-VB is a high-efficiency single N-channel power MOSFET in a **TO252 package**, designed for high voltage and medium current applications. Its drain-source voltage (**VDS**) is as high as **200V**, suitable for working in high voltage environments, and is widely used in power management and switching circuits. The gate-source voltage (**VGS**) of the device can reach ±20V, ensuring good switching performance under various driving conditions. The threshold voltage (**Vth**) is **3V**, which allows effective turn-on at a lower driving voltage. The on-resistance (**RDS(ON)**) is **245mΩ** when VGS is **10V**, which can effectively reduce conduction losses, thereby improving the energy efficiency and reliability of the system.
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MTD6N20E-VB is a high-efficiency single N-channel power MOSFET in a **TO252 package**, designed for high voltage and medium current applications. Its drain-source voltage (**VDS**) is as high as **200V**, suitable for working in high voltage environments, and is widely used in power management and switching circuits. The gate-source voltage (**VGS**) of the device can reach ±20V, ensuring good switching performance under various driving conditions. The threshold voltage (**Vth**) is **3V**, which allows effective turn-on at a lower driving voltage. The on-resistance (**RDS(ON)**) is **245mΩ** when VGS is **10V**, which can effectively reduce conduction losses, thereby improving the energy efficiency and reliability of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| **Parameter** | **Specification** |
|--------------------------|-------------------------------|
| **Model** | MTD6N20E-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 200V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 245mΩ @ VGS=10V |
| **Drain current (ID)** | 10A |
| **Technology** | Trench |
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| **Parameter** | **Specification** |
|--------------------------|-------------------------------|
| **Model** | MTD6N20E-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 200V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 245mΩ @ VGS=10V |
| **Drain current (ID)** | 10A |
| **Technology** | Trench |
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Domain and module applications：
Application fields and module examples
**MTD6N20E-VB** has a wide range of applications in multiple fields and modules, with specific examples as follows:
1. **Switching Power Supply (SMPS)**
- This MOSFET is commonly used in switching power supply design, and can efficiently convert power at high voltage. It is suitable for computer power supplies, LED driver power supplies, and other power modules to improve overall energy efficiency.
2. **Motor Drive**
- In motor control applications, MTD6N20E-VB can be used as an efficient switching device, suitable for driving DC motors and stepper motors, achieving smooth control and efficient power transfer, and is widely used in industrial automation equipment and household appliances.
3. **LED Lighting**
- This MOSFET is suitable for LED drive circuits, and can provide stable current output to ensure the consistency and brightness of LEDs. It is particularly suitable for commercial lighting and high-power LED applications.
4. **Power Management IC**
- MTD6N20E-VB can be used in the switching circuit of the power management IC, suitable for efficient energy scheduling in the battery management system and charger to optimize the battery charging and discharging process.
5. **Electrical Protection**
- In high voltage applications, this MOSFET can also be used as a circuit protection device, such as overvoltage protection and short circuit protection, to improve the safety and stability of the system through fast response and high reliability.
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MTD6N20E-VB is a powerful power MOSFET, with its high voltage and excellent conduction characteristics, it is an ideal choice in many applications.
**MTD6N20E-VB** has a wide range of applications in multiple fields and modules, with specific examples as follows:
1. **Switching Power Supply (SMPS)**
- This MOSFET is commonly used in switching power supply design, and can efficiently convert power at high voltage. It is suitable for computer power supplies, LED driver power supplies, and other power modules to improve overall energy efficiency.
2. **Motor Drive**
- In motor control applications, MTD6N20E-VB can be used as an efficient switching device, suitable for driving DC motors and stepper motors, achieving smooth control and efficient power transfer, and is widely used in industrial automation equipment and household appliances.
3. **LED Lighting**
- This MOSFET is suitable for LED drive circuits, and can provide stable current output to ensure the consistency and brightness of LEDs. It is particularly suitable for commercial lighting and high-power LED applications.
4. **Power Management IC**
- MTD6N20E-VB can be used in the switching circuit of the power management IC, suitable for efficient energy scheduling in the battery management system and charger to optimize the battery charging and discharging process.
5. **Electrical Protection**
- In high voltage applications, this MOSFET can also be used as a circuit protection device, such as overvoltage protection and short circuit protection, to improve the safety and stability of the system through fast response and high reliability.
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MTD6N20E-VB is a powerful power MOSFET, with its high voltage and excellent conduction characteristics, it is an ideal choice in many applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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