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MTD6N20ET4-VB Product details
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Product Introduction
**MTD6N20ET4-VB** is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high power applications. The device has a maximum drain-source voltage (VDS) of 200V, which can withstand higher voltage applications, while the gate-source voltage (VGS) range is ±20V, which is suitable for a variety of drive circuits. Its threshold voltage (Vth) is 3V, ensuring fast turn-on capability. The on-resistance (RDS(ON)) is 245mΩ (@ VGS=10V), showing good conductivity at a maximum drain current (ID) of 10A. MTD6N20ET4-VB uses Trench technology, has low conduction loss and good switching characteristics, and is widely used in power management, inverters and other high-efficiency power supply designs.
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**MTD6N20ET4-VB** is a high-performance single N-channel MOSFET in TO252 package, designed for high voltage and high power applications. The device has a maximum drain-source voltage (VDS) of 200V, which can withstand higher voltage applications, while the gate-source voltage (VGS) range is ±20V, which is suitable for a variety of drive circuits. Its threshold voltage (Vth) is 3V, ensuring fast turn-on capability. The on-resistance (RDS(ON)) is 245mΩ (@ VGS=10V), showing good conductivity at a maximum drain current (ID) of 10A. MTD6N20ET4-VB uses Trench technology, has low conduction loss and good switching characteristics, and is widely used in power management, inverters and other high-efficiency power supply designs.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| **Parameter** | **Value** |
|-------------------------|------------------|
| **Model** | MTD6N20ET4-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 200V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 245mΩ @ VGS=10V |
| **Drain current (ID)** | 10A |
| **Technology** | Trench |
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| **Parameter** | **Value** |
|-------------------------|------------------|
| **Model** | MTD6N20ET4-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 200V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 245mΩ @ VGS=10V |
| **Drain current (ID)** | 10A |
| **Technology** | Trench |
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Domain and module applications：
Applications and Module Examples
1. **Power Management**
The MTD6N20ET4-VB plays an important role in power management systems and is widely used in switching power supplies and DC-DC converters. Its high voltage carrying capability and low conduction loss ensure high-efficiency energy conversion to meet various power supply requirements.
2. **Inverter**
This MOSFET performs well in inverter applications and is suitable for use in solar inverters and electric vehicle inverters. Its low on-resistance and fast switching characteristics enable it to perform well in high-power inverter processes, improving the overall efficiency of the system.
3. **LED Drive**
In LED lighting design, the MTD6N20ET4-VB can effectively control the LED current to ensure high brightness and stability. Its high voltage and current capabilities make it an ideal choice for high-power LED drive circuits.
4. **Motor Control**
This device is also widely used in motor control circuits, such as DC motor and stepper motor drives. Its good conductivity and high voltage tolerance enable it to operate reliably in harsh environments and meet various motor control requirements.
5. **Industrial Application**
In industrial power supply equipment, MTD6N20ET4-VB can be used for the design of high-voltage power supplies to ensure the stability and safety of the equipment during high-voltage operation. It is suitable for various industrial automation equipment and control systems, improving production efficiency and reliability.
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In summary, **MTD6N20ET4-VB** is an efficient N-channel MOSFET suitable for power management, inverters, LED drivers, motor control and industrial applications. Its superior electrical characteristics and reliability make it outstanding in high-voltage and high-power applications.
1. **Power Management**
The MTD6N20ET4-VB plays an important role in power management systems and is widely used in switching power supplies and DC-DC converters. Its high voltage carrying capability and low conduction loss ensure high-efficiency energy conversion to meet various power supply requirements.
2. **Inverter**
This MOSFET performs well in inverter applications and is suitable for use in solar inverters and electric vehicle inverters. Its low on-resistance and fast switching characteristics enable it to perform well in high-power inverter processes, improving the overall efficiency of the system.
3. **LED Drive**
In LED lighting design, the MTD6N20ET4-VB can effectively control the LED current to ensure high brightness and stability. Its high voltage and current capabilities make it an ideal choice for high-power LED drive circuits.
4. **Motor Control**
This device is also widely used in motor control circuits, such as DC motor and stepper motor drives. Its good conductivity and high voltage tolerance enable it to operate reliably in harsh environments and meet various motor control requirements.
5. **Industrial Application**
In industrial power supply equipment, MTD6N20ET4-VB can be used for the design of high-voltage power supplies to ensure the stability and safety of the equipment during high-voltage operation. It is suitable for various industrial automation equipment and control systems, improving production efficiency and reliability.
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In summary, **MTD6N20ET4-VB** is an efficient N-channel MOSFET suitable for power management, inverters, LED drivers, motor control and industrial applications. Its superior electrical characteristics and reliability make it outstanding in high-voltage and high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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