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MTD6N20ET4G-VB Product details
Back to previous pageProduct introduction：
1. MTD6N20ET4G-VB Product Introduction
MTD6N20ET4G-VB is a **single N-channel power MOSFET**, package type **TO252**. The device has a maximum drain-source voltage (**VDS**) of 200V, and a gate-source voltage (**VGS**) of ±20V, which enables it to perform well in medium and high voltage applications. Its turn-on voltage (**Vth**) is 3V, and the on-resistance (**RDS(ON)**) is 245mΩ at VGS=10V, providing good conduction performance and low power loss. With its advanced Trench technology, the MTD6N20ET4G-VB is particularly suitable for various power management and switching applications, and can effectively improve the energy efficiency of the circuit.
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MTD6N20ET4G-VB is a **single N-channel power MOSFET**, package type **TO252**. The device has a maximum drain-source voltage (**VDS**) of 200V, and a gate-source voltage (**VGS**) of ±20V, which enables it to perform well in medium and high voltage applications. Its turn-on voltage (**Vth**) is 3V, and the on-resistance (**RDS(ON)**) is 245mΩ at VGS=10V, providing good conduction performance and low power loss. With its advanced Trench technology, the MTD6N20ET4G-VB is particularly suitable for various power management and switching applications, and can effectively improve the energy efficiency of the circuit.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of MTD6N20ET4G-VB
| **Parameter** | **Value** | **Description** |
|-------------------------|---------------------------|------------------------------------|
| **Package type** | TO252 | Surface mount package, suitable for compact design|
| **Configuration** | Single N-channel | Suitable for low-side switching and power management|
| **VDS (drain-source voltage)** | 200V | Maximum drain-source voltage that can be tolerated|
| **VGS (gate-source voltage)** | ±20V | Maximum voltage range allowed by the gate|
| **Vth (turn-on voltage)** | 3V | MOSFET turns on when the gate voltage reaches this value|
| **RDS(ON)@VGS=10V** | 245mΩ | On-resistance at 10V gate voltage|
| **ID (drain current)** | 10A | Maximum continuous drain current |
| **Technology** | Trench | Trench technology for low voltage and high efficiency applications |
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| **Parameter** | **Value** | **Description** |
|-------------------------|---------------------------|------------------------------------|
| **Package type** | TO252 | Surface mount package, suitable for compact design|
| **Configuration** | Single N-channel | Suitable for low-side switching and power management|
| **VDS (drain-source voltage)** | 200V | Maximum drain-source voltage that can be tolerated|
| **VGS (gate-source voltage)** | ±20V | Maximum voltage range allowed by the gate|
| **Vth (turn-on voltage)** | 3V | MOSFET turns on when the gate voltage reaches this value|
| **RDS(ON)@VGS=10V** | 245mΩ | On-resistance at 10V gate voltage|
| **ID (drain current)** | 10A | Maximum continuous drain current |
| **Technology** | Trench | Trench technology for low voltage and high efficiency applications |
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Domain and module applications：
III. MTD6N20ET4G-VB Application Fields and Module Examples
1. **Switching Power Supply**
MTD6N20ET4G-VB can be widely used in **switching power supply**, as a switching element to control the flow of current, achieve high-efficiency power conversion, reduce heat loss, improve energy efficiency, and ensure stable power output.
2. **DC-DC Converter**
In **DC-DC Converter** design, the high voltage tolerance and low on-resistance of this MOSFET make it very suitable for boost and buck circuits to achieve stable output voltage and current.
3. **Motor Drive**
This MOSFET can be used in **motor drive** circuits as a switching element to control the start and stop and speed of the motor. It is widely used in various power tools and household appliances to ensure efficient motor control.
4. **LED driver**
In **LED driver** applications, MTD6N20ET4G-VB can be used as a switch to control the power supply of LED lighting, ensuring efficient power management and excellent light output performance, and is suitable for lighting systems.
5. **Consumer electronics**
This MOSFET performs well in **consumer electronics** and is suitable for use in power management modules to help improve the energy efficiency of devices and extend battery life, such as in mobile phones, tablets and portable devices.
In summary, MTD6N20ET4G-VB is an excellent N-channel power MOSFET suitable for a variety of efficient power management and switching applications, meeting the needs of modern electronic devices for high performance and reliability.
1. **Switching Power Supply**
MTD6N20ET4G-VB can be widely used in **switching power supply**, as a switching element to control the flow of current, achieve high-efficiency power conversion, reduce heat loss, improve energy efficiency, and ensure stable power output.
2. **DC-DC Converter**
In **DC-DC Converter** design, the high voltage tolerance and low on-resistance of this MOSFET make it very suitable for boost and buck circuits to achieve stable output voltage and current.
3. **Motor Drive**
This MOSFET can be used in **motor drive** circuits as a switching element to control the start and stop and speed of the motor. It is widely used in various power tools and household appliances to ensure efficient motor control.
4. **LED driver**
In **LED driver** applications, MTD6N20ET4G-VB can be used as a switch to control the power supply of LED lighting, ensuring efficient power management and excellent light output performance, and is suitable for lighting systems.
5. **Consumer electronics**
This MOSFET performs well in **consumer electronics** and is suitable for use in power management modules to help improve the energy efficiency of devices and extend battery life, such as in mobile phones, tablets and portable devices.
In summary, MTD6N20ET4G-VB is an excellent N-channel power MOSFET suitable for a variety of efficient power management and switching applications, meeting the needs of modern electronic devices for high performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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