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MTD6N10-VB Product details
Back to previous pageProduct introduction：
1. MTD6N10-VB Product Introduction
MTD6N10-VB is a high-performance **N-Channel MOSFET**, using **TO252 package**, designed for medium voltage applications. The device has a maximum drain-source voltage (**VDS**) of up to **100V**, suitable for a variety of power management and switch control occasions. Its gate-source voltage (**VGS**) is **±20V** at most, and it can turn on quickly when **Vth** is **1.8V**, showing excellent switching performance. The **on-resistance (RDS(ON))** of MTD6N10-VB is **114mΩ** at **VGS=10V**, which makes it have lower conduction loss in the application and improves system efficiency. The maximum drain current (**ID**) is **15A**, suitable for a variety of medium-power switching power supplies and drive circuits.
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MTD6N10-VB is a high-performance **N-Channel MOSFET**, using **TO252 package**, designed for medium voltage applications. The device has a maximum drain-source voltage (**VDS**) of up to **100V**, suitable for a variety of power management and switch control occasions. Its gate-source voltage (**VGS**) is **±20V** at most, and it can turn on quickly when **Vth** is **1.8V**, showing excellent switching performance. The **on-resistance (RDS(ON))** of MTD6N10-VB is **114mΩ** at **VGS=10V**, which makes it have lower conduction loss in the application and improves system efficiency. The maximum drain current (**ID**) is **15A**, suitable for a variety of medium-power switching power supplies and drive circuits.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. MTD6N10-VB Detailed Parameter Description
| **Parameter** | **Description and Value** |
|-------------------------|---------------------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-channel MOSFET |
| **Drain-Source Voltage(VDS)** | 100V |
| **Gate-Source Voltage(VGS)** | ±20V |
| **Throwing Voltage(Vth)** | 1.8V |
| **On-Resistance(RDS(ON))** | 114mΩ @ VGS = 10V |
| **Drain Current(ID)** | 15A |
| **Technology** | Trench |
| **Maximum Power Dissipation(Pd)** | 40W (depending on heat dissipation conditions) |
| **Operating Temperature Range** | -55°C to 150°C |
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| **Parameter** | **Description and Value** |
|-------------------------|---------------------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-channel MOSFET |
| **Drain-Source Voltage(VDS)** | 100V |
| **Gate-Source Voltage(VGS)** | ±20V |
| **Throwing Voltage(Vth)** | 1.8V |
| **On-Resistance(RDS(ON))** | 114mΩ @ VGS = 10V |
| **Drain Current(ID)** | 15A |
| **Technology** | Trench |
| **Maximum Power Dissipation(Pd)** | 40W (depending on heat dissipation conditions) |
| **Operating Temperature Range** | -55°C to 150°C |
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Domain and module applications：
III. MTD6N10-VB Application Fields and Modules
The characteristics of MTD6N10-VB make it widely used in many fields and modules. The following are some application examples suitable for this MOSFET:
1. **Switching Power Supply**
- MTD6N10-VB can be used for **Switching Power Supply (SMPS)** and **DC-DC Converter**. It can achieve power conversion through efficient switching control and is widely used in power management of various electronic devices.
2. **LED Drive**
- This device is suitable for **LED lighting control**, which can effectively adjust the brightness of LEDs and is used in commercial lighting, home lighting, and automotive lighting control.
3. **Motor Control**
- MTD6N10-VB can be used in **motor drive circuits**, which can respond quickly and provide stable current, and is suitable for motor control of household appliances and industrial equipment.
4. **Battery Management System (BMS)**
- In the battery management system, MTD6N10-VB can be used as a switching element to manage the battery charging and discharging process, improve the safety and efficiency of the battery, and is widely used in electric vehicles and energy storage systems.
5. **Inverter**
- This MOSFET can be used in the design of **inverter** to convert DC power into AC power, and is widely used in renewable energy solutions such as solar power generation systems and wind power generation systems.
6. **Consumer Electronics**
- MTD6N10-VB is suitable for various **consumer electronic devices**, such as power management modules for smartphones, tablets and portable devices, to help improve the overall performance and reliability of the product.
Through these application examples, MTD6N10-VB demonstrates its wide applicability to high efficiency, low loss and high reliability in modern electronic devices.
The characteristics of MTD6N10-VB make it widely used in many fields and modules. The following are some application examples suitable for this MOSFET:
1. **Switching Power Supply**
- MTD6N10-VB can be used for **Switching Power Supply (SMPS)** and **DC-DC Converter**. It can achieve power conversion through efficient switching control and is widely used in power management of various electronic devices.
2. **LED Drive**
- This device is suitable for **LED lighting control**, which can effectively adjust the brightness of LEDs and is used in commercial lighting, home lighting, and automotive lighting control.
3. **Motor Control**
- MTD6N10-VB can be used in **motor drive circuits**, which can respond quickly and provide stable current, and is suitable for motor control of household appliances and industrial equipment.
4. **Battery Management System (BMS)**
- In the battery management system, MTD6N10-VB can be used as a switching element to manage the battery charging and discharging process, improve the safety and efficiency of the battery, and is widely used in electric vehicles and energy storage systems.
5. **Inverter**
- This MOSFET can be used in the design of **inverter** to convert DC power into AC power, and is widely used in renewable energy solutions such as solar power generation systems and wind power generation systems.
6. **Consumer Electronics**
- MTD6N10-VB is suitable for various **consumer electronic devices**, such as power management modules for smartphones, tablets and portable devices, to help improve the overall performance and reliability of the product.
Through these application examples, MTD6N10-VB demonstrates its wide applicability to high efficiency, low loss and high reliability in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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