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MTD6N10T4G-VB Product details
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Product Introduction
MTD6N10T4G-VB is a high-performance single N-channel MOSFET in TO252 package, designed for various electronic applications. The maximum drain-source voltage (VDS) of this MOSFET is 100V, the gate-source voltage (VGS) can reach ±20V, and the threshold voltage (Vth) is 1.8V. Its on-resistance RDS(ON) is 114mΩ when VGS is 10V, and the maximum leakage current (ID) can reach 15A. The device adopts advanced Trench technology, which can provide low power consumption and high-efficiency switching performance, and is widely used in fields such as high-efficiency power management and motor drive.
MTD6N10T4G-VB is a high-performance single N-channel MOSFET in TO252 package, designed for various electronic applications. The maximum drain-source voltage (VDS) of this MOSFET is 100V, the gate-source voltage (VGS) can reach ±20V, and the threshold voltage (Vth) is 1.8V. Its on-resistance RDS(ON) is 114mΩ when VGS is 10V, and the maximum leakage current (ID) can reach 15A. The device adopts advanced Trench technology, which can provide low power consumption and high-efficiency switching performance, and is widely used in fields such as high-efficiency power management and motor drive.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: MTD6N10T4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 100V (drain-source voltage)
- **VGS**: ±20V (gate-source voltage)
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 114mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 15A
- **Technology**: Trench
- **Model**: MTD6N10T4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 100V (drain-source voltage)
- **VGS**: ±20V (gate-source voltage)
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 114mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 15A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power management**:
MTD6N10T4G-VB can be widely used in switching power supplies (SMPS) and DC-DC converters to optimize the energy conversion process, provide stable power output, reduce energy loss, and improve overall system efficiency.
2. **Motor drive**:
This MOSFET has excellent performance in motor drive applications and is suitable for DC motor and stepper motor control circuits to meet the high efficiency requirements of industrial automation, robots, and power tools.
3. **LED drive**:
MTD6N10T4G-VB is suitable for LED drive circuits, especially in high-power lighting applications. It can drive high-brightness LEDs with low on-resistance and is widely used in lighting equipment and automotive lighting systems.
4. **Consumer electronics**:
In mobile devices, smart homes, and wearable devices, this MOSFET can be used in battery management systems to optimize the charging and discharging process, extend the battery life of the device, and improve user experience.
5. **Chargers and Adapters**:
MTD6N10T4G-VB is suitable for switch control in various chargers and adapters. It can handle higher load currents and support fast charging technology to ensure the high efficiency of modern electronic devices.
With its excellent performance and flexible application scenarios, MTD6N10T4G-VB has become a key component in modern electronic design and is widely used in high-efficiency circuits.
1. **Power management**:
MTD6N10T4G-VB can be widely used in switching power supplies (SMPS) and DC-DC converters to optimize the energy conversion process, provide stable power output, reduce energy loss, and improve overall system efficiency.
2. **Motor drive**:
This MOSFET has excellent performance in motor drive applications and is suitable for DC motor and stepper motor control circuits to meet the high efficiency requirements of industrial automation, robots, and power tools.
3. **LED drive**:
MTD6N10T4G-VB is suitable for LED drive circuits, especially in high-power lighting applications. It can drive high-brightness LEDs with low on-resistance and is widely used in lighting equipment and automotive lighting systems.
4. **Consumer electronics**:
In mobile devices, smart homes, and wearable devices, this MOSFET can be used in battery management systems to optimize the charging and discharging process, extend the battery life of the device, and improve user experience.
5. **Chargers and Adapters**:
MTD6N10T4G-VB is suitable for switch control in various chargers and adapters. It can handle higher load currents and support fast charging technology to ensure the high efficiency of modern electronic devices.
With its excellent performance and flexible application scenarios, MTD6N10T4G-VB has become a key component in modern electronic design and is widely used in high-efficiency circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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