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MTD6N10RL-VB Product details
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**Product Introduction: MTD6N10RL-VB MOSFET**
MTD6N10RL-VB is a high-performance **single N-channel MOSFET** in **TO252 package**, designed for high voltage applications. Its **drain-source voltage (VDS) can reach 100V**, suitable for circuits that need to withstand high voltage. Within the **±20V gate-source voltage (VGS)** range, the MOSFET can operate stably to ensure the safety and reliability of the circuit.
The **threshold voltage (Vth) of the device is 1.8V**, which can be turned on quickly at a lower gate voltage, suitable for high-frequency switching operations. Its on-resistance (RDS(ON)) is 114mΩ** at **VGS=10V**, and it can withstand a maximum drain current (ID) of up to **15A**, and performs well in a variety of application scenarios. The use of **trench technology** (Trench) not only improves the conduction efficiency, but also enhances the thermal management capability, enabling it to operate reliably in a variety of application environments.
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MTD6N10RL-VB is a high-performance **single N-channel MOSFET** in **TO252 package**, designed for high voltage applications. Its **drain-source voltage (VDS) can reach 100V**, suitable for circuits that need to withstand high voltage. Within the **±20V gate-source voltage (VGS)** range, the MOSFET can operate stably to ensure the safety and reliability of the circuit.
The **threshold voltage (Vth) of the device is 1.8V**, which can be turned on quickly at a lower gate voltage, suitable for high-frequency switching operations. Its on-resistance (RDS(ON)) is 114mΩ** at **VGS=10V**, and it can withstand a maximum drain current (ID) of up to **15A**, and performs well in a variety of application scenarios. The use of **trench technology** (Trench) not only improves the conduction efficiency, but also enhances the thermal management capability, enabling it to operate reliably in a variety of application environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**Detailed parameter description**
| **Parameter** | **Value** | **Description** |
|------------------------|------------------------|----------|
| **Package type** | TO252 | Surface mount package, suitable for high power density applications|
| **Configuration** | Single-N-Channel | Single channel design, suitable for a variety of power switching applications|
| **VDS (drain-source voltage)** | 100V | Maximum drain-source voltage that can be tolerated|
| **VGS (gate-source voltage)** | ±20V | Maximum gate drive voltage|
| **Vth (threshold voltage)** | 1.8V | Minimum gate voltage required to turn on|
| **RDS(ON)@VGS=10V** | 114mΩ | On-resistance at 10V gate drive voltage|
| **ID (drain current)** | 15A | Maximum continuous drain current|
| **Technology** | Trench | Trench technology provides excellent electrical performance and thermal management |
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| **Parameter** | **Value** | **Description** |
|------------------------|------------------------|----------|
| **Package type** | TO252 | Surface mount package, suitable for high power density applications|
| **Configuration** | Single-N-Channel | Single channel design, suitable for a variety of power switching applications|
| **VDS (drain-source voltage)** | 100V | Maximum drain-source voltage that can be tolerated|
| **VGS (gate-source voltage)** | ±20V | Maximum gate drive voltage|
| **Vth (threshold voltage)** | 1.8V | Minimum gate voltage required to turn on|
| **RDS(ON)@VGS=10V** | 114mΩ | On-resistance at 10V gate drive voltage|
| **ID (drain current)** | 15A | Maximum continuous drain current|
| **Technology** | Trench | Trench technology provides excellent electrical performance and thermal management |
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Domain and module applications：
**Application fields and module examples**
1. **Power management**
MTD6N10RL-VB is widely used in power management circuits, especially in switching power supplies. As a high-side or low-side switch, it can efficiently adjust the output of the power supply and improve the energy efficiency and stability of the system.
2. **LED drive**
This MOSFET is suitable for LED drive circuits and can control the brightness of LEDs. It is widely used in intelligent lighting systems and backlight modules to ensure efficient use and long life of light sources.
3. **Motor control**
MTD6N10RL-VB can be used as a switching element in motor drive circuits to achieve precise control of motors. It is suitable for power tools, household appliances and industrial automation equipment to improve the working efficiency of motors.
4. **DC-DC converter**
In DC-DC converters, MTD6N10RL-VB is used as a switching element to achieve voltage conversion and current regulation, meeting the needs of various electronic devices for stable power supply, and is widely used in consumer electronics and power systems.
5. **Charger and Battery Management System**
This MOSFET can be used as a switch in the charger circuit to control the battery charging and discharging process, ensuring safe and efficient current control in the battery management system, suitable for the management of lithium batteries and other rechargeable batteries.
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With its excellent electrical performance and wide range of applications, MTD6N10RL-VB is an indispensable key component in modern power and control systems, suitable for a variety of power and load management design requirements.
1. **Power management**
MTD6N10RL-VB is widely used in power management circuits, especially in switching power supplies. As a high-side or low-side switch, it can efficiently adjust the output of the power supply and improve the energy efficiency and stability of the system.
2. **LED drive**
This MOSFET is suitable for LED drive circuits and can control the brightness of LEDs. It is widely used in intelligent lighting systems and backlight modules to ensure efficient use and long life of light sources.
3. **Motor control**
MTD6N10RL-VB can be used as a switching element in motor drive circuits to achieve precise control of motors. It is suitable for power tools, household appliances and industrial automation equipment to improve the working efficiency of motors.
4. **DC-DC converter**
In DC-DC converters, MTD6N10RL-VB is used as a switching element to achieve voltage conversion and current regulation, meeting the needs of various electronic devices for stable power supply, and is widely used in consumer electronics and power systems.
5. **Charger and Battery Management System**
This MOSFET can be used as a switch in the charger circuit to control the battery charging and discharging process, ensuring safe and efficient current control in the battery management system, suitable for the management of lithium batteries and other rechargeable batteries.
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With its excellent electrical performance and wide range of applications, MTD6N10RL-VB is an indispensable key component in modern power and control systems, suitable for a variety of power and load management design requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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