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MTD6N10E-VB Product details
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MTD6N10E-VB Product Introduction
**MTD6N10E-VB** is a high-performance single N-channel MOSFET in a **TO252 package**, designed for high-voltage power management and switching applications. Its **drain-source voltage (VDS)** is as high as **100V**, enabling it to operate reliably in circuits requiring higher voltages. The device's maximum **15A** continuous drain current (ID) ensures that it can drive high-current loads and is suitable for a variety of applications. At **VGS=10V**, its on-resistance is **114mΩ**, providing low conduction losses and optimizing overall system efficiency. MTD6N10E-VB uses **Trench technology**, which enables it to excel in both switching speed and conduction characteristics, making it very suitable for high-frequency applications.
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**MTD6N10E-VB** is a high-performance single N-channel MOSFET in a **TO252 package**, designed for high-voltage power management and switching applications. Its **drain-source voltage (VDS)** is as high as **100V**, enabling it to operate reliably in circuits requiring higher voltages. The device's maximum **15A** continuous drain current (ID) ensures that it can drive high-current loads and is suitable for a variety of applications. At **VGS=10V**, its on-resistance is **114mΩ**, providing low conduction losses and optimizing overall system efficiency. MTD6N10E-VB uses **Trench technology**, which enables it to excel in both switching speed and conduction characteristics, making it very suitable for high-frequency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
MTD6N10E-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 114mΩ @ VGS = 10V
- **Maximum continuous leakage current (ID)**: 15A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to 150°C
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- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 114mΩ @ VGS = 10V
- **Maximum continuous leakage current (ID)**: 15A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to 150°C
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Domain and module applications：
Applications and module examples
1. **Power management**: The MTD6N10E-VB can be used in a variety of power management circuits, including power converters and switching power supplies. It can handle input voltages up to 100V and is suitable for industrial equipment and consumer electronics.
2. **Motor drive**: In motor control applications, this MOSFET can be used as an efficient switching element for DC motor and stepper motor drive circuits to achieve precise speed and torque control. It is widely used in power tools and household appliances.
3. **LED drive**: The MTD6N10E-VB can be used as a switching element in LED drive circuits. It is suitable for LED lighting systems that require high voltage and high current, ensuring efficient energy conversion and long life.
4. **Communication equipment**: This MOSFET is suitable for power amplification and switching applications in high-frequency communication equipment, such as base stations, routers and other wireless devices, which can effectively improve the working efficiency of the equipment.
5. **Automotive electronics**: In automotive electronic systems, MTD6N10E-VB can be used as power management and load switches, suitable for intelligent vehicle power systems and safety equipment to ensure reliability and performance.
In summary, MTD6N10E-VB is a high-efficiency N-channel MOSFET that is widely used in power management, motor drive, LED drive and other fields, and can significantly improve the performance and reliability of electronic equipment.
1. **Power management**: The MTD6N10E-VB can be used in a variety of power management circuits, including power converters and switching power supplies. It can handle input voltages up to 100V and is suitable for industrial equipment and consumer electronics.
2. **Motor drive**: In motor control applications, this MOSFET can be used as an efficient switching element for DC motor and stepper motor drive circuits to achieve precise speed and torque control. It is widely used in power tools and household appliances.
3. **LED drive**: The MTD6N10E-VB can be used as a switching element in LED drive circuits. It is suitable for LED lighting systems that require high voltage and high current, ensuring efficient energy conversion and long life.
4. **Communication equipment**: This MOSFET is suitable for power amplification and switching applications in high-frequency communication equipment, such as base stations, routers and other wireless devices, which can effectively improve the working efficiency of the equipment.
5. **Automotive electronics**: In automotive electronic systems, MTD6N10E-VB can be used as power management and load switches, suitable for intelligent vehicle power systems and safety equipment to ensure reliability and performance.
In summary, MTD6N10E-VB is a high-efficiency N-channel MOSFET that is widely used in power management, motor drive, LED drive and other fields, and can significantly improve the performance and reliability of electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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