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MTD6N10ET4G-VB Product details
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MTD6N10ET4G-VB Product Introduction
MTD6N10ET4G-VB is a high-performance N-channel MOSFET in TO252 package with excellent conductivity and low on-resistance. Its maximum drain-source voltage (VDS) is 100V, and it has a wide gate-source voltage (VGS) range of up to ±20V, which is suitable for a variety of power management applications. The threshold voltage (Vth) of this MOSFET is 1.8V, which allows it to be turned on under low voltage drive, making it suitable for drive circuits and switching power supplies.
MTD6N10ET4G-VB is a high-performance N-channel MOSFET in TO252 package with excellent conductivity and low on-resistance. Its maximum drain-source voltage (VDS) is 100V, and it has a wide gate-source voltage (VGS) range of up to ±20V, which is suitable for a variety of power management applications. The threshold voltage (Vth) of this MOSFET is 1.8V, which allows it to be turned on under low voltage drive, making it suitable for drive circuits and switching power supplies.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: MTD6N10ET4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 100V
- **VGS**: ±20V
- **Vth**: 1.8V
- **RDS(ON)**: 114mΩ (at VGS=10V)
- **ID**: 15A
- **Technology**: Trench
- **Model**: MTD6N10ET4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 100V
- **VGS**: ±20V
- **Vth**: 1.8V
- **RDS(ON)**: 114mΩ (at VGS=10V)
- **ID**: 15A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
MTD6N10ET4G-VB is widely used in many fields, mainly including:
1. **Power management**: In DC-DC converters and switching power supplies, MTD6N10ET4G-VB can be used as the main switching element to provide high-efficiency power conversion.
2. **Motor drive**: In motor control and drive circuits, this MOSFET can effectively control the switching state of the motor and provide a stable output current.
3. **Lighting control**: In LED drive and dimming circuits, MTD6N10ET4G-VB can be used for efficient LED driving to ensure stable brightness output.
4. **Charger design**: In portable electronic devices and battery management systems, as a switching element of the charger, it ensures a fast and efficient charging process.
5. **Automotive Electronics**: In automotive power management and drive control circuits, the high voltage and high current capabilities of this MOSFET make it ideal for use in the electronic control units of modern cars.
In summary, the MTD6N10ET4G-VB is an ideal choice for multiple industries and applications due to its efficient performance and versatility.
MTD6N10ET4G-VB is widely used in many fields, mainly including:
1. **Power management**: In DC-DC converters and switching power supplies, MTD6N10ET4G-VB can be used as the main switching element to provide high-efficiency power conversion.
2. **Motor drive**: In motor control and drive circuits, this MOSFET can effectively control the switching state of the motor and provide a stable output current.
3. **Lighting control**: In LED drive and dimming circuits, MTD6N10ET4G-VB can be used for efficient LED driving to ensure stable brightness output.
4. **Charger design**: In portable electronic devices and battery management systems, as a switching element of the charger, it ensures a fast and efficient charging process.
5. **Automotive Electronics**: In automotive power management and drive control circuits, the high voltage and high current capabilities of this MOSFET make it ideal for use in the electronic control units of modern cars.
In summary, the MTD6N10ET4G-VB is an ideal choice for multiple industries and applications due to its efficient performance and versatility.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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