MTD60N02RT4G-VB Product details
Product introduction:
MTD60N02RT4G-VB is a high-performance **single N-channel** MOSFET in **TO252 package**, designed for low voltage and high current applications. The device has a **30V** drain-source voltage (VDS) and **±20V** gate-source voltage (VGS), and its threshold voltage is **1.7V**. At **VGS = 10V**, the on-resistance (RDS(ON)) of this MOSFET is only **5mΩ**, at **VGS = 4.5V** it is **6mΩ**, and the maximum drain current (ID) is **80A**. MTD60N02RT4G-VB adopts **Trench technology**, with extremely low on-resistance and efficient switching characteristics, which is very suitable for power management and high power applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| Parameters | Specifications |
|--------------------|--------------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-Channel |
| **Drain-source voltage (VDS)** | 30 V |
| **Gate-source voltage (VGS)** | ±20 V |
| **Threshold voltage (Vth)** | 1.7 V |
| **On-resistance (RDS(ON))** | 6 mΩ @ VGS = 4.5 V |
| | 5 mΩ @ VGS = 10 V |
| **Drain current (ID)** | 80 A |
| **Technology** | Trench |
MTD60N02RT4G-VB With its low on-resistance and high current capability, it is suitable for use in a variety of high-performance and low-power applications, ensuring the reliability and efficiency of the equipment.
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Domain and module applications:
1. **Power management system**
MTD60N02RT4G-VB plays a key role in power management applications. As an efficient switching device, it is used for power conversion and regulation to ensure stable power output. It is suitable for various consumer electronic products and industrial equipment.
2. **Switching power supply (SMPS)**
This MOSFET is suitable for switching power supply modules. It has efficient switching speed and low energy consumption. It can operate effectively under high frequency conditions. It is widely used in computer power supplies, chargers and LED drivers.
3. **Motor drive**
MTD60N02RT4G-VB performs well in motor drive applications and can provide strong current output. It is suitable for the control of DC motors and stepper motors. It is widely used in power tools, household appliances and automation equipment.
4. **LED drive circuit**
This MOSFET is very suitable for LED drive circuits. By efficiently controlling the current, the overall efficiency of the lighting system is improved. It is widely used in commercial and household LED lighting solutions.
5. **Communication equipment**
MTD60N02RT4G-VB can also be used in power management modules in various communication equipment to ensure the stability and efficiency of the power supply. It is suitable for wireless communication equipment, network switches and other data transmission equipment.
Through its superior performance, MTD60N02RT4G-VB has become an ideal choice for modern power management and control applications, providing support for the efficient operation of various electronic devices.
Technical support:
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