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MTD5P06VT4G-VB Product details
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MTD5P06VT4G-VB Product Introduction
MTD5P06VT4G-VB is a high-efficiency single P-channel power MOSFET in a **TO252 package**, designed for high current and low voltage applications. Its drain-source voltage (**VDS**) can reach **-60V**, suitable for a variety of power management and switching applications. The gate-source voltage (**VGS**) of the device can reach ±20V, making it excellent in switching performance. The threshold voltage (**Vth**) is **-1.7V**, ensuring that the device can start at a lower driving voltage. Its on-resistance (**RDS(ON)**) is **100mΩ** at VGS of **4.5V** and **90mΩ** at VGS of **10V**, which makes the device exhibit lower conduction losses in high current applications and enhances overall energy efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100mΩ | 90mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
Detailed parameter description
| **Parameter** | **Specification** |
|--------------------------|-------------------------------|
| **Model** | MTD5P06VT4G-VB |
| **Package** | TO252 |
| **Configuration** | Single P channel|
| **Drain-source voltage (VDS)** | -60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | -1.7V |
| **On-resistance (RDS(ON))** | 100mΩ @ VGS=4.5V |
| | 90mΩ @ VGS=10V |
| **Drain current (ID)** | -30A |
| **Technology** | Trench |
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Domain and module applications：
Application fields and module examples
**MTD5P06VT4G-VB** has a wide range of applications in multiple fields and modules, with specific examples as follows:
1. **Power management system**
- This MOSFET is suitable for power management circuits such as DC-DC converters, which can efficiently regulate voltage and current to ensure stable power supply for various electronic devices. It is widely used in consumer electronics and industrial equipment.
2. **Motor drive**
- In motor control applications, the MTD5P06VT4G-VB can drive P-channel motors, which are suitable for power tools and household appliances. Through its efficient current control characteristics, it ensures smooth operation and high efficiency of the motor.
3. **LED drive circuit**
- This MOSFET is suitable for LED drive design, which can provide stable current output to ensure the consistency and brightness of LED lighting. It is widely used in commercial lighting and home decorative lighting.
4. **Switching Power Supply**
- MTD5P06VT4G-VB can be used for switching power supply design, which can efficiently handle power conversion and is particularly suitable for low voltage and high current applications. It can improve energy efficiency and reduce energy loss, and is suitable for a variety of electronic products.
5. **Battery Management System (BMS)**
- In the battery management system, this MOSFET can be used to optimize the battery charging and discharging process, ensure the safety and efficiency of high-power battery packs, and is suitable for electric vehicles and renewable energy storage systems.
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MTD5P06VT4G-VB
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