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MTD5P06ET4G-VB Product details

Product introduction:

Product Introduction

**MTD5P06ET4G-VB** is a high-performance single P-channel MOSFET in TO252 package, designed for low voltage and high current applications. Its maximum drain-source voltage (VDS) is -60V, suitable for use in negative voltage environments. The gate-source voltage (VGS) range of the device is ±20V, supporting flexible driving requirements. The threshold voltage (Vth) is -1.7V, which enables fast turn-on at a lower gate voltage. The on-resistance (RDS(ON)) is 100mΩ (@ VGS=4.5V) and 90mΩ (@ VGS=10V), ensuring efficient conduction performance under high current conditions (maximum drain current ID is -30A). MTD5P06ET4G-VB uses Trench technology and has superior switching characteristics. It is widely used in power management, motor drive and other fields requiring high efficiency and reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -60V -1.7V -30A 100mΩ 90mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -60V -1.7V -30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -60V -1.7V -30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P

Detailed parameter description

| **Parameter** | **Value** |
|-------------------------|-------------------|
| **Model** | MTD5P06ET4G-VB |
| **Package** | TO252 |
| **Configuration** | Single P-channel|
| **Drain-source voltage (VDS)** | -60V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | -1.7V |
| **On-resistance (RDS(ON))** | 100mΩ @ VGS=4.5V |
| **On-resistance (RDS(ON))** | 90mΩ @ VGS=10V |
| **Drain current (ID)** | -30A |
| **Technology** | Trench |

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Domain and module applications:


Applications and module examples

1. **Power management**
The MTD5P06ET4G-VB plays an important role in power management systems and is suitable for voltage regulation and current control circuits. It can operate reliably under high negative voltages, ensuring the stability and efficiency of power conversion, and is widely used in designs such as DC-DC converters and linear regulators.

2. **Motor drive**
In motor control applications, this MOSFET can efficiently drive a variety of motors and is suitable for power tools, fans and other equipment that require precise control. Its high conductivity and low conduction losses help improve the performance and service life of the motor.

3. **Automotive electronics**
The device can be used in automotive electronics such as battery management systems and high-voltage control circuits to ensure reliability in automotive environments. The high current carrying capability of the MTD5P06ET4G-VB makes it suitable for demanding automotive applications.

4. **LED lighting**
MTD5P06ET4G-VB is also widely used in LED drive circuits, especially in high-power LED lighting systems. Its low on-resistance can effectively reduce energy loss and improve the efficiency and reliability of LED lighting.

5. **Home appliances**
In home appliances, this MOSFET can be used for efficient energy management, such as smart home devices and various electric devices, ensuring stability and low power consumption during long-term operation.

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In summary, **MTD5P06ET4G-VB** is an efficient P-channel MOSFET suitable for power management, motor drive, automotive electronics, LED lighting and home appliances. Its superior electrical characteristics and reliability make it an ideal choice for negative voltage applications.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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