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MTD5N25ET4G-VB Product details
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1. MTD5N25ET4G-VB Product Introduction
MTD5N25ET4G-VB is a **single N-channel power MOSFET**, package type **TO252**. The device has a maximum drain-source voltage (**VDS**) of 250V, and a gate-source voltage (**VGS**) of ±20V, making it excellent in high-voltage applications. Its turn-on voltage (**Vth**) is 3V, and its on-resistance (**RDS(ON)**) is 640mΩ at VGS=10V, providing good conduction performance and low power loss. With its efficient Trench technology, the MTD5N25ET4G-VB is suitable for a variety of power management and switching applications.
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MTD5N25ET4G-VB is a **single N-channel power MOSFET**, package type **TO252**. The device has a maximum drain-source voltage (**VDS**) of 250V, and a gate-source voltage (**VGS**) of ±20V, making it excellent in high-voltage applications. Its turn-on voltage (**Vth**) is 3V, and its on-resistance (**RDS(ON)**) is 640mΩ at VGS=10V, providing good conduction performance and low power loss. With its efficient Trench technology, the MTD5N25ET4G-VB is suitable for a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | 640mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of MTD5N25ET4G-VB
| **Parameter** | **Value** | **Description** |
|-------------------------|---------------------------|------------------------------------|
| **Package type** | TO252 | Surface mount package, suitable for compact design|
| **Configuration** | Single N-channel | Suitable for low-side switching and power management|
| **VDS (drain-source voltage)** | 250V | Maximum drain-source voltage that can be tolerated|
| **VGS (gate-source voltage)** | ±20V | Maximum gate voltage range allowed|
| **Vth (turn-on voltage)** | 3V | MOSFET turns on when the gate voltage reaches this value|
| **RDS(ON)@VGS=10V** | 640mΩ | On-resistance at 10V gate voltage|
| **ID (drain current)** | 4.5A | Maximum continuous drain current |
| **Technology** | Trench | Trench technology for low voltage and high efficiency applications |
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| **Parameter** | **Value** | **Description** |
|-------------------------|---------------------------|------------------------------------|
| **Package type** | TO252 | Surface mount package, suitable for compact design|
| **Configuration** | Single N-channel | Suitable for low-side switching and power management|
| **VDS (drain-source voltage)** | 250V | Maximum drain-source voltage that can be tolerated|
| **VGS (gate-source voltage)** | ±20V | Maximum gate voltage range allowed|
| **Vth (turn-on voltage)** | 3V | MOSFET turns on when the gate voltage reaches this value|
| **RDS(ON)@VGS=10V** | 640mΩ | On-resistance at 10V gate voltage|
| **ID (drain current)** | 4.5A | Maximum continuous drain current |
| **Technology** | Trench | Trench technology for low voltage and high efficiency applications |
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Domain and module applications：
III. MTD5N25ET4G-VB Application Fields and Module Examples
1. **Switching Power Supply**
MTD5N25ET4G-VB can be widely used in **switching power supply** as a switching element to control the flow of current, while achieving high-efficiency power conversion, reducing heat loss and improving energy efficiency.
2. **DC-DC Converter**
In **DC-DC Converter** design, the high voltage tolerance and low on-resistance of this MOSFET make it very suitable for boost and buck circuits to ensure stable output voltage and current.
3. **Motor Drive**
This MOSFET can be used in **motor drive** circuits as a switching element to control the start and stop and speed of the motor. It is suitable for various power tools and household appliances to provide efficient motor control.
4. **LED driver**
In **LED driver** applications, MTD5N25ET4G-VB can be used as a switch to control the power supply of LED lighting, ensuring efficient power management and excellent light output performance, and is widely used in lighting systems.
5. **Consumer electronics**
This MOSFET performs well in **consumer electronics** and is suitable for use in power management modules to help improve the energy efficiency of devices and extend battery life, such as in mobile phones, tablets and portable devices.
In summary, MTD5N25ET4G-VB is an excellent N-channel power MOSFET suitable for a variety of efficient power management and switching applications, meeting the needs of modern electronic devices for high performance and reliability.
1. **Switching Power Supply**
MTD5N25ET4G-VB can be widely used in **switching power supply** as a switching element to control the flow of current, while achieving high-efficiency power conversion, reducing heat loss and improving energy efficiency.
2. **DC-DC Converter**
In **DC-DC Converter** design, the high voltage tolerance and low on-resistance of this MOSFET make it very suitable for boost and buck circuits to ensure stable output voltage and current.
3. **Motor Drive**
This MOSFET can be used in **motor drive** circuits as a switching element to control the start and stop and speed of the motor. It is suitable for various power tools and household appliances to provide efficient motor control.
4. **LED driver**
In **LED driver** applications, MTD5N25ET4G-VB can be used as a switch to control the power supply of LED lighting, ensuring efficient power management and excellent light output performance, and is widely used in lighting systems.
5. **Consumer electronics**
This MOSFET performs well in **consumer electronics** and is suitable for use in power management modules to help improve the energy efficiency of devices and extend battery life, such as in mobile phones, tablets and portable devices.
In summary, MTD5N25ET4G-VB is an excellent N-channel power MOSFET suitable for a variety of efficient power management and switching applications, meeting the needs of modern electronic devices for high performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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