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MTD4P06T4G-VB Product details
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MTD4P06T4G-VB Product Introduction
**MTD4P06T4G-VB** is a high-performance single P-channel MOSFET in a **TO252 package**, designed for power management and switching applications that require higher reverse voltages. The device has a **drain-source voltage (VDS)** of **-60V**, suitable for a variety of power circuits, especially in load switching and power distribution systems. The MTD4P06T4G-VB has a maximum **-30A** continuous drain current (ID), which can effectively drive high-current loads. At **VGS=10V**, its on-resistance is **90mΩ**, and at **VGS=4.5V** it is **100mΩ**, ensuring excellent conduction performance under a variety of gate voltage conditions. The device uses **Trench technology**, with low conduction loss and fast switching characteristics, suitable for high-frequency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100mΩ | 90mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
MTD4P06T4G-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS = 4.5V
- 90mΩ @ VGS = 10V
- **Maximum continuous leakage current (ID)**: -30A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to 150°C
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Domain and module applications：
Applications and module examples
1. **Load switch**: MTD4P06T4G-VB can be used as a load switch element to achieve fast switching of loads in situations where high voltage and high current are required. It is suitable for battery-powered portable devices and consumer electronics to provide efficient power management.
2. **Power management**: In the power distribution system, this MOSFET can be used as a switching element to control the switching of different power sources to achieve efficient energy distribution. It is particularly suitable for applications that require energy saving, such as smart home devices and power adapters.
3. **Motor drive**: MTD4P06T4G-VB is suitable for motor control circuits, such as DC motor drives, and provides reverse current processing capabilities. It is widely used in home appliances, power tools, robots and other fields.
4. **LED drive**: In LED drive circuits, this MOSFET can provide precise control of LEDs, and is particularly suitable for dimming and switching LED lighting systems to ensure high efficiency and extend service life.
5. **Audio amplifier**: In audio amplifier applications, MTD4P06T4G-VB can be used in the power amplification stage to provide reliable current driving capability and ensure clear transmission of audio signals, which is very suitable for high-fidelity audio equipment.
In summary, MTD4P06T4G-VB is a P-channel MOSFET with superior performance, which is widely used in many fields and can effectively improve the performance and reliability of electronic equipment.
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