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MTD4N20-VB Product details
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Product Introduction
**MTD4N20-VB** is a high-performance single N-channel MOSFET in a TO252 package, designed for applications requiring medium power and high voltage handling. Its maximum drain-source voltage (VDS) is 200V, which is suitable for electronic devices in high-voltage environments. The device has a gate-source voltage (VGS) range of ±20V and can operate under flexible driving conditions. The threshold voltage (Vth) is 3V, ensuring fast turn-on at a lower gate voltage. The on-resistance (RDS(ON)) is 245mΩ, providing good conductivity at a gate voltage of 10V, thereby reducing conduction losses. The maximum drain current (ID) is 10A, which can meet the needs of a variety of applications. MTD4N20-VB uses Trench technology, has superior switching characteristics and thermal performance, and is widely used in power management, switching power supplies and other high-voltage control fields.
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**MTD4N20-VB** is a high-performance single N-channel MOSFET in a TO252 package, designed for applications requiring medium power and high voltage handling. Its maximum drain-source voltage (VDS) is 200V, which is suitable for electronic devices in high-voltage environments. The device has a gate-source voltage (VGS) range of ±20V and can operate under flexible driving conditions. The threshold voltage (Vth) is 3V, ensuring fast turn-on at a lower gate voltage. The on-resistance (RDS(ON)) is 245mΩ, providing good conductivity at a gate voltage of 10V, thereby reducing conduction losses. The maximum drain current (ID) is 10A, which can meet the needs of a variety of applications. MTD4N20-VB uses Trench technology, has superior switching characteristics and thermal performance, and is widely used in power management, switching power supplies and other high-voltage control fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| **Parameter** | **Value** |
|-------------------------|------------------|
| **Model** | MTD4N20-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 200V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 245mΩ @ VGS=10V |
| **Drain current (ID)** | 10A |
| **Technology** | Trench |
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| **Parameter** | **Value** |
|-------------------------|------------------|
| **Model** | MTD4N20-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 200V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 245mΩ @ VGS=10V |
| **Drain current (ID)** | 10A |
| **Technology** | Trench |
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Domain and module applications：
Applications and module examples
1. **Switching power supply**
The MTD4N20-VB is suitable for use in switching power supplies (SMPS) as a switching element in high voltage applications. Its maximum drain-source voltage of 200V can efficiently handle power conversion, and its low on-resistance helps reduce switching losses and improve overall efficiency.
2. **Power management system**
In power management systems, this MOSFET can be used for current control and voltage regulation to ensure device stability and high efficiency. Its flexible gate drive capability is suitable for high voltage environments, making it widely used in various power management solutions.
3. **Motor drive**
The MTD4N20-VB performs well in motor drive applications and is suitable for power tools and other motors that require precise control. Its high current carrying capacity and excellent conduction performance can improve the drive efficiency of the motor.
4. **LED drive circuit**
This MOSFET is also very suitable in LED drive circuits, especially for high-power lighting. Its low on-resistance can effectively reduce energy loss, thereby improving the driving performance and service life of the LED.
5. **Automotive electronics applications**
This MOSFET is also suitable for automotive electronic equipment such as battery management systems and high-voltage electrical control units. The high voltage withstand capability of MTD4N20-VB ensures reliability in complex electrical environments.
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In summary, **MTD4N20-VB** is a high-performance N-channel MOSFET suitable for multiple fields such as switching power supplies, power management systems, motor drives, LED drive circuits and automotive electronics. Its excellent electrical characteristics and reliability make it an ideal choice for high-voltage applications.
1. **Switching power supply**
The MTD4N20-VB is suitable for use in switching power supplies (SMPS) as a switching element in high voltage applications. Its maximum drain-source voltage of 200V can efficiently handle power conversion, and its low on-resistance helps reduce switching losses and improve overall efficiency.
2. **Power management system**
In power management systems, this MOSFET can be used for current control and voltage regulation to ensure device stability and high efficiency. Its flexible gate drive capability is suitable for high voltage environments, making it widely used in various power management solutions.
3. **Motor drive**
The MTD4N20-VB performs well in motor drive applications and is suitable for power tools and other motors that require precise control. Its high current carrying capacity and excellent conduction performance can improve the drive efficiency of the motor.
4. **LED drive circuit**
This MOSFET is also very suitable in LED drive circuits, especially for high-power lighting. Its low on-resistance can effectively reduce energy loss, thereby improving the driving performance and service life of the LED.
5. **Automotive electronics applications**
This MOSFET is also suitable for automotive electronic equipment such as battery management systems and high-voltage electrical control units. The high voltage withstand capability of MTD4N20-VB ensures reliability in complex electrical environments.
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In summary, **MTD4N20-VB** is a high-performance N-channel MOSFET suitable for multiple fields such as switching power supplies, power management systems, motor drives, LED drive circuits and automotive electronics. Its excellent electrical characteristics and reliability make it an ideal choice for high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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