中文
English
MTD4N20E-VB Product details
Back to previous pageProduct introduction：
1. MTD4N20E-VB Product Introduction
MTD4N20E-VB is a **single N-channel power MOSFET**, using **TO252 package**, which is designed for high-voltage applications, with a maximum drain-source voltage (**VDS**) of 200V, supporting a gate-source voltage (**VGS**) of ±20V, and a turn-on voltage (**Vth**) of 3V. The on-resistance (**RDS(ON)**) of this MOSFET is 245mΩ at VGS=10V, with low power loss and excellent conduction performance, making it an excellent performer in a variety of power management and switching applications.
---
MTD4N20E-VB is a **single N-channel power MOSFET**, using **TO252 package**, which is designed for high-voltage applications, with a maximum drain-source voltage (**VDS**) of 200V, supporting a gate-source voltage (**VGS**) of ±20V, and a turn-on voltage (**Vth**) of 3V. The on-resistance (**RDS(ON)**) of this MOSFET is 245mΩ at VGS=10V, with low power loss and excellent conduction performance, making it an excellent performer in a variety of power management and switching applications.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of MTD4N20E-VB
| **Parameter** | **Value** | **Description** |
|-------------------------|---------------------------|------------------------------------|
| **Package type** | TO252 | Surface mount package, suitable for compact design|
| **Configuration** | Single N-channel | Suitable for low-side switching and power management|
| **VDS (drain-source voltage)** | 200V | Maximum drain-source voltage that can be tolerated|
| **VGS (gate-source voltage)** | ±20V | Maximum gate voltage range allowed|
| **Vth (turn-on voltage)** | 3V | MOSFET turns on when the gate voltage reaches this value|
| **RDS(ON)@VGS=10V** | 245mΩ | On-resistance at 10V gate voltage|
| **ID (drain current)** | 10A | Maximum continuous drain current |
| **Technology** | Trench | Trench technology for low voltage and high efficiency applications |
---
| **Parameter** | **Value** | **Description** |
|-------------------------|---------------------------|------------------------------------|
| **Package type** | TO252 | Surface mount package, suitable for compact design|
| **Configuration** | Single N-channel | Suitable for low-side switching and power management|
| **VDS (drain-source voltage)** | 200V | Maximum drain-source voltage that can be tolerated|
| **VGS (gate-source voltage)** | ±20V | Maximum gate voltage range allowed|
| **Vth (turn-on voltage)** | 3V | MOSFET turns on when the gate voltage reaches this value|
| **RDS(ON)@VGS=10V** | 245mΩ | On-resistance at 10V gate voltage|
| **ID (drain current)** | 10A | Maximum continuous drain current |
| **Technology** | Trench | Trench technology for low voltage and high efficiency applications |
---
Domain and module applications：
III. MTD4N20E-VB Application Fields and Module Examples
1. **Switching Power Supply**
MTD4N20E-VB can be widely used in **switching power supply**. As a switching element, it controls the flow of current during power conversion, which can effectively improve energy efficiency and reduce heat generation.
2. **DC-DC Converter**
In **DC-DC Converter** design, the high voltage tolerance and low on-resistance of this MOSFET make it very suitable for boost and buck circuits to ensure stable output voltage and current.
3. **Motor Drive**
This MOSFET can also be used in **motor drive** circuits as a switching element to control the start and stop and speed of the motor, which can achieve precise motor control and is suitable for fans, pumps and other power tools.
4. **LED driver**
In **LED driver** applications, the MTD4N20E-VB can be used as a switch to control the power supply of LED lighting, ensuring efficient power management and good light output.
5. **Consumer electronics**
This MOSFET also performs well in **consumer electronics** and is suitable for use in power management modules to help improve the energy efficiency of devices and extend battery life, such as in mobile phones, tablets and laptops.
In summary, the MTD4N20E-VB is an N-channel power MOSFET with high voltage tolerance and low power consumption, suitable for a variety of electronic devices and systems that require efficient power management.
1. **Switching Power Supply**
MTD4N20E-VB can be widely used in **switching power supply**. As a switching element, it controls the flow of current during power conversion, which can effectively improve energy efficiency and reduce heat generation.
2. **DC-DC Converter**
In **DC-DC Converter** design, the high voltage tolerance and low on-resistance of this MOSFET make it very suitable for boost and buck circuits to ensure stable output voltage and current.
3. **Motor Drive**
This MOSFET can also be used in **motor drive** circuits as a switching element to control the start and stop and speed of the motor, which can achieve precise motor control and is suitable for fans, pumps and other power tools.
4. **LED driver**
In **LED driver** applications, the MTD4N20E-VB can be used as a switch to control the power supply of LED lighting, ensuring efficient power management and good light output.
5. **Consumer electronics**
This MOSFET also performs well in **consumer electronics** and is suitable for use in power management modules to help improve the energy efficiency of devices and extend battery life, such as in mobile phones, tablets and laptops.
In summary, the MTD4N20E-VB is an N-channel power MOSFET with high voltage tolerance and low power consumption, suitable for a variety of electronic devices and systems that require efficient power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
