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MTD3N25ET4G-VB Product details
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1. MTD3N25ET4G-VB Product Introduction
MTD3N25ET4G-VB is a high-performance **N-Channel MOSFET**, using **TO252 package**, designed for high-voltage power management and switching applications. The device has a maximum drain-source voltage (**VDS**) of up to **250V** and a maximum gate-source voltage (**VGS**) of **±20V**, suitable for a variety of industrial and consumer electronics applications. Its **turn-on voltage (Vth)** is **3V**, and it can turn on quickly at a lower gate voltage. At **VGS = 10V**, its **on-resistance (RDS(ON))** is **640mΩ**, which means that relatively low conduction losses can be achieved in practical applications, ensuring improved system efficiency. The maximum drain current (**ID**) is **4.5A**, suitable for a variety of applications with medium current requirements. MTD3N25ET4G-VB adopts **Trench technology**, with fast switching and low power consumption characteristics, widely used in power adapters, lighting control, drive circuits, etc.
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MTD3N25ET4G-VB is a high-performance **N-Channel MOSFET**, using **TO252 package**, designed for high-voltage power management and switching applications. The device has a maximum drain-source voltage (**VDS**) of up to **250V** and a maximum gate-source voltage (**VGS**) of **±20V**, suitable for a variety of industrial and consumer electronics applications. Its **turn-on voltage (Vth)** is **3V**, and it can turn on quickly at a lower gate voltage. At **VGS = 10V**, its **on-resistance (RDS(ON))** is **640mΩ**, which means that relatively low conduction losses can be achieved in practical applications, ensuring improved system efficiency. The maximum drain current (**ID**) is **4.5A**, suitable for a variety of applications with medium current requirements. MTD3N25ET4G-VB adopts **Trench technology**, with fast switching and low power consumption characteristics, widely used in power adapters, lighting control, drive circuits, etc.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | 640mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. MTD3N25ET4G-VB Detailed parameter description
| **Parameter** | **Description and value** |
|-------------------------|---------------------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-channel MOSFET |
| **Drain-source voltage (VDS)** | 250V |
| **Gate-source voltage (VGS)** | ±20V |
| **Throw-on voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 640mΩ @ VGS = 10V |
| **Drain current (ID)** | 4.5A |
| **Technology** | Trench |
| **Maximum power dissipation (Pd)** | 35W (depending on heat dissipation conditions) |
| **Operating temperature range** | -55°C to 150°C |
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| **Parameter** | **Description and value** |
|-------------------------|---------------------------------------|
| **Package** | TO252 |
| **Configuration** | Single N-channel MOSFET |
| **Drain-source voltage (VDS)** | 250V |
| **Gate-source voltage (VGS)** | ±20V |
| **Throw-on voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 640mΩ @ VGS = 10V |
| **Drain current (ID)** | 4.5A |
| **Technology** | Trench |
| **Maximum power dissipation (Pd)** | 35W (depending on heat dissipation conditions) |
| **Operating temperature range** | -55°C to 150°C |
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Domain and module applications：
III. MTD3N25ET4G-VB Application Fields and Modules
The characteristics of MTD3N25ET4G-VB make it widely used in multiple fields and modules. The following are some examples of applications suitable for this MOSFET:
1. **Power Management**
- MTD3N25ET4G-VB can be widely used in **power adapters** and **switching power supplies (SMPS)**, providing efficient voltage conversion and current control, suitable for power management of various electronic devices.
2. **Lighting Control**
- This MOSFET performs well in **LED lighting control systems**, can be used as an efficient switching element to control the brightness and working state of LEDs, and is suitable for indoor and outdoor lighting applications.
3. **Motor Drive**
- MTD3N25ET4G-VB is suitable for motor drive circuits, can respond quickly and provide efficient current control, and is widely used in motor control of household appliances and industrial equipment.
4. **Inverter Application**
- In **inverters**, this MOSFET can be used to convert high-voltage DC to AC, and is widely used in solar power generation systems and other renewable energy solutions.
5. **Battery Management System (BMS)**
- This MOSFET can be used as a switching element in the battery management system to effectively manage the charging and discharging process, improve the safety and efficiency of lithium batteries, and is particularly suitable for electric vehicles and energy storage systems.
6. **Consumer Electronics**
- Due to its high performance and miniaturized design, the MTD3N25ET4G-VB is suitable for power management modules of various **consumer electronic devices**, such as smartphones, tablets and portable devices.
In summary, as an efficient N-Channel MOSFET, the MTD3N25ET4G-VB is widely used in power management, drive and control and other fields with its excellent performance, meeting the needs of modern electronic devices for high efficiency and high reliability.
The characteristics of MTD3N25ET4G-VB make it widely used in multiple fields and modules. The following are some examples of applications suitable for this MOSFET:
1. **Power Management**
- MTD3N25ET4G-VB can be widely used in **power adapters** and **switching power supplies (SMPS)**, providing efficient voltage conversion and current control, suitable for power management of various electronic devices.
2. **Lighting Control**
- This MOSFET performs well in **LED lighting control systems**, can be used as an efficient switching element to control the brightness and working state of LEDs, and is suitable for indoor and outdoor lighting applications.
3. **Motor Drive**
- MTD3N25ET4G-VB is suitable for motor drive circuits, can respond quickly and provide efficient current control, and is widely used in motor control of household appliances and industrial equipment.
4. **Inverter Application**
- In **inverters**, this MOSFET can be used to convert high-voltage DC to AC, and is widely used in solar power generation systems and other renewable energy solutions.
5. **Battery Management System (BMS)**
- This MOSFET can be used as a switching element in the battery management system to effectively manage the charging and discharging process, improve the safety and efficiency of lithium batteries, and is particularly suitable for electric vehicles and energy storage systems.
6. **Consumer Electronics**
- Due to its high performance and miniaturized design, the MTD3N25ET4G-VB is suitable for power management modules of various **consumer electronic devices**, such as smartphones, tablets and portable devices.
In summary, as an efficient N-Channel MOSFET, the MTD3N25ET4G-VB is widely used in power management, drive and control and other fields with its excellent performance, meeting the needs of modern electronic devices for high efficiency and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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