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MTD3302T4G-VB Product details
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Product Introduction
MTD3302T4G-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high-efficiency electronic applications. Its maximum drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) can reach ±20V, and the threshold voltage (Vth) is 1.7V. The on-resistance RDS(ON) of this MOSFET is 6mΩ when VGS is 4.5V, and 5mΩ when VGS is 10V, with excellent conduction performance. The maximum leakage current (ID) can reach 80A. Combined with advanced Trench technology, MTD3302T4G-VB can provide high-efficiency, low-power switching control and is widely used in various electronic devices.
MTD3302T4G-VB is a high-performance single N-channel MOSFET in TO252 package, designed for high-efficiency electronic applications. Its maximum drain-source voltage (VDS) is 30V, the gate-source voltage (VGS) can reach ±20V, and the threshold voltage (Vth) is 1.7V. The on-resistance RDS(ON) of this MOSFET is 6mΩ when VGS is 4.5V, and 5mΩ when VGS is 10V, with excellent conduction performance. The maximum leakage current (ID) can reach 80A. Combined with advanced Trench technology, MTD3302T4G-VB can provide high-efficiency, low-power switching control and is widely used in various electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 30V | 1.7V | 80A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: MTD3302T4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 30V (drain-source voltage)
- **VGS**: ±20V (gate-source voltage)
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 80A
- **Technology**: Trench
- **Model**: MTD3302T4G-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **VDS**: 30V (drain-source voltage)
- **VGS**: ±20V (gate-source voltage)
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 6mΩ @ VGS = 4.5V
- 5mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 80A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power management**:
MTD3302T4G-VB can be used in power management modules of switching power supplies (SMPS) and DC-DC converters to provide efficient power conversion and energy management, reduce power consumption and improve system efficiency.
2. **Motor drive**:
In motor drive applications, this MOSFET is suitable for DC motor and stepper motor control circuits, supports high current and fast switching, and can meet the high efficiency requirements in industrial automation and robotics.
3. **LED drive**:
MTD3302T4G-VB is an ideal choice for LED drive circuits, which can achieve efficient brightness adjustment with extremely low on-resistance and is widely used in high-power lighting and automotive lighting systems.
4. **Consumer electronics**:
In mobile devices, smart homes and wearable devices, this MOSFET can be used in battery management systems to optimize the charging and discharging process, improve battery efficiency and extend device life.
5. **Chargers and Adapters**:
This MOSFET can be used for switch control in various chargers and adapters to ensure reliable operation under high load current conditions and meet the needs of fast charging technology.
With its excellent performance and flexible application scenarios, MTD3302T4G-VB is an indispensable component in modern electronic devices and is widely used in high-efficiency circuit design.
1. **Power management**:
MTD3302T4G-VB can be used in power management modules of switching power supplies (SMPS) and DC-DC converters to provide efficient power conversion and energy management, reduce power consumption and improve system efficiency.
2. **Motor drive**:
In motor drive applications, this MOSFET is suitable for DC motor and stepper motor control circuits, supports high current and fast switching, and can meet the high efficiency requirements in industrial automation and robotics.
3. **LED drive**:
MTD3302T4G-VB is an ideal choice for LED drive circuits, which can achieve efficient brightness adjustment with extremely low on-resistance and is widely used in high-power lighting and automotive lighting systems.
4. **Consumer electronics**:
In mobile devices, smart homes and wearable devices, this MOSFET can be used in battery management systems to optimize the charging and discharging process, improve battery efficiency and extend device life.
5. **Chargers and Adapters**:
This MOSFET can be used for switch control in various chargers and adapters to ensure reliable operation under high load current conditions and meet the needs of fast charging technology.
With its excellent performance and flexible application scenarios, MTD3302T4G-VB is an indispensable component in modern electronic devices and is widely used in high-efficiency circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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