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MTD3055VLG-VB Product details
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**Product Introduction: MTD3055VLG-VB MOSFET**
The MTD3055VLG-VB is a **single N-channel MOSFET** in a **TO252 package**, designed for high-performance and high-reliability switching applications. It has a **60V drain-source voltage (VDS)**, which can withstand higher voltages while operating stably at **±20V gate-source voltage (VGS)**. The **threshold voltage (Vth) of this MOSFET is 1.7V**, ensuring fast turn-on at a lower gate voltage, suitable for high-frequency switching operations.
The device's on-resistance (RDS(ON)) is 85mΩ** at **VGS=4.5V** and 73mΩ** at **VGS=10V**, showing good conduction performance and capable of supporting a maximum drain current (ID) of up to **18A**, making it suitable for circuit designs with medium loads. In addition, by using **trench technology**, this MOSFET not only has excellent electrical performance, but also has good thermal management capabilities, making it suitable for use in various working environments.
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The MTD3055VLG-VB is a **single N-channel MOSFET** in a **TO252 package**, designed for high-performance and high-reliability switching applications. It has a **60V drain-source voltage (VDS)**, which can withstand higher voltages while operating stably at **±20V gate-source voltage (VGS)**. The **threshold voltage (Vth) of this MOSFET is 1.7V**, ensuring fast turn-on at a lower gate voltage, suitable for high-frequency switching operations.
The device's on-resistance (RDS(ON)) is 85mΩ** at **VGS=4.5V** and 73mΩ** at **VGS=10V**, showing good conduction performance and capable of supporting a maximum drain current (ID) of up to **18A**, making it suitable for circuit designs with medium loads. In addition, by using **trench technology**, this MOSFET not only has excellent electrical performance, but also has good thermal management capabilities, making it suitable for use in various working environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
**Detailed parameter description**
| **Parameter** | **Value** | **Description** |
|------------------------|------------------------|----------|
| **Package type** | TO252 | Surface mount package, suitable for higher heat dissipation requirements|
| **Configuration** | Single-N-Channel | Single channel design, suitable for various electronic switch applications|
| **VDS (drain-source voltage)** | 60V | Can be used for high-voltage load switching|
| **VGS (gate-source voltage)** | ±20V | Maximum gate control voltage|
| **Vth (threshold voltage)** | 1.7V | Minimum gate voltage required to turn on|
| **RDS(ON)@VGS=4.5V** | 85mΩ | On-resistance at 4.5V gate drive voltage|
| **RDS(ON)@VGS=10V** | 73mΩ | On-resistance at 10V gate drive voltage |
| **ID (Drain Current)** | 18A | Maximum continuous drain current |
| **Technology** | Trench | Trench technology provides low on-resistance and good thermal performance |
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| **Parameter** | **Value** | **Description** |
|------------------------|------------------------|----------|
| **Package type** | TO252 | Surface mount package, suitable for higher heat dissipation requirements|
| **Configuration** | Single-N-Channel | Single channel design, suitable for various electronic switch applications|
| **VDS (drain-source voltage)** | 60V | Can be used for high-voltage load switching|
| **VGS (gate-source voltage)** | ±20V | Maximum gate control voltage|
| **Vth (threshold voltage)** | 1.7V | Minimum gate voltage required to turn on|
| **RDS(ON)@VGS=4.5V** | 85mΩ | On-resistance at 4.5V gate drive voltage|
| **RDS(ON)@VGS=10V** | 73mΩ | On-resistance at 10V gate drive voltage |
| **ID (Drain Current)** | 18A | Maximum continuous drain current |
| **Technology** | Trench | Trench technology provides low on-resistance and good thermal performance |
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Domain and module applications：
**Application fields and module examples**
1. **Power management**
MTD3055VLG-VB is widely used in power management circuits, especially in switching power supply design. As a high-side or low-side switch, it can effectively adjust the output state of the power supply and improve the overall energy efficiency of the system.
2. **Charger and battery management system**
This MOSFET is suitable for charger circuits to control the inflow and outflow of current to ensure the safety and efficiency of the battery during charging and discharging. It is especially suitable for the management and protection of lithium batteries.
3. **DC-DC converter**
In the DC-DC converter, MTD3055VLG-VB, as a switching element, can efficiently realize voltage conversion and meet the needs of various electronic devices for stable voltage.
4. **Motor control**
This MOSFET can be used as a switching element in the motor drive circuit to adjust the start, stop and speed control of the motor. It is widely used in power tools, household appliances and industrial automation equipment.
5. **LED drive and lighting system**
MTD3055VLG-VB can be used in LED drive circuits as a switch regulator to achieve LED brightness control. It is suitable for intelligent lighting and display systems and provides efficient current management.
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With its excellent performance and wide range of applications, MTD3055VLG-VB is an indispensable key component in modern electronic circuits and is suitable for the design requirements of a variety of power supplies and control systems.
1. **Power management**
MTD3055VLG-VB is widely used in power management circuits, especially in switching power supply design. As a high-side or low-side switch, it can effectively adjust the output state of the power supply and improve the overall energy efficiency of the system.
2. **Charger and battery management system**
This MOSFET is suitable for charger circuits to control the inflow and outflow of current to ensure the safety and efficiency of the battery during charging and discharging. It is especially suitable for the management and protection of lithium batteries.
3. **DC-DC converter**
In the DC-DC converter, MTD3055VLG-VB, as a switching element, can efficiently realize voltage conversion and meet the needs of various electronic devices for stable voltage.
4. **Motor control**
This MOSFET can be used as a switching element in the motor drive circuit to adjust the start, stop and speed control of the motor. It is widely used in power tools, household appliances and industrial automation equipment.
5. **LED drive and lighting system**
MTD3055VLG-VB can be used in LED drive circuits as a switch regulator to achieve LED brightness control. It is suitable for intelligent lighting and display systems and provides efficient current management.
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With its excellent performance and wide range of applications, MTD3055VLG-VB is an indispensable key component in modern electronic circuits and is suitable for the design requirements of a variety of power supplies and control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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