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MTD3055T4G-VB Product details
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MTD3055T4G-VB Product Introduction
**MTD3055T4G-VB** is a high-performance single N-channel MOSFET in **TO252 package**, designed for high voltage and high current applications. The **drain-source voltage (VDS)** of this device is **60V**, suitable for various power management and switching circuits. With a maximum **18A** continuous drain current (ID), it can effectively handle large load currents. At **VGS=10V**, the on-resistance of MTD3055T4G-VB is **73mΩ**, and at **VGS=4.5V** it is **85mΩ**, ensuring excellent conduction performance under low gate voltage conditions. This device uses **Trench technology**, with high switching speed and low conduction loss, suitable for high-frequency and high-power circuit applications.
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**MTD3055T4G-VB** is a high-performance single N-channel MOSFET in **TO252 package**, designed for high voltage and high current applications. The **drain-source voltage (VDS)** of this device is **60V**, suitable for various power management and switching circuits. With a maximum **18A** continuous drain current (ID), it can effectively handle large load currents. At **VGS=10V**, the on-resistance of MTD3055T4G-VB is **73mΩ**, and at **VGS=4.5V** it is **85mΩ**, ensuring excellent conduction performance under low gate voltage conditions. This device uses **Trench technology**, with high switching speed and low conduction loss, suitable for high-frequency and high-power circuit applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
MTD3055T4G-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 73mΩ @ VGS = 10V
- **Maximum continuous leakage current (ID)**: 18A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to 150°C
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- **Package type**: TO252
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 73mΩ @ VGS = 10V
- **Maximum continuous leakage current (ID)**: 18A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to 150°C
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Domain and module applications：
Applications and module examples
1. **DC-DC converter**: The MTD3055T4G-VB can be used as a switching element in DC-DC converters, especially in applications that require stable high voltage output, such as boost and buck converters. Its low on-resistance characteristics can improve conversion efficiency and reduce heat generation.
2. **Power management**: This MOSFET is suitable for various power management circuits, such as battery management systems, load switches, and power distribution. It is able to switch between multiple power sources to ensure device stability and reliability, especially in portable and mobile devices.
3. **Motor drive**: In motor drive applications, the MTD3055T4G-VB can be used to control DC motors and stepper motors, ensuring precise control and efficient operation of the motors, and is widely used in power tools and household appliances.
4. **LED driver**: In LED lighting applications, MTD3055T4G-VB can be used as a switching element to control the switching and dimming functions of LEDs. Its lower on-resistance can reduce energy loss and improve the efficiency and life of LED lighting systems.
5. **Audio amplifier**: In audio amplifier design, MTD3055T4G-VB can be used in power amplifier circuits to improve the processing capability of audio signals and ensure stability under high currents, which is very suitable for the needs of high-fidelity audio equipment.
In summary, MTD3055T4G-VB
1. **DC-DC converter**: The MTD3055T4G-VB can be used as a switching element in DC-DC converters, especially in applications that require stable high voltage output, such as boost and buck converters. Its low on-resistance characteristics can improve conversion efficiency and reduce heat generation.
2. **Power management**: This MOSFET is suitable for various power management circuits, such as battery management systems, load switches, and power distribution. It is able to switch between multiple power sources to ensure device stability and reliability, especially in portable and mobile devices.
3. **Motor drive**: In motor drive applications, the MTD3055T4G-VB can be used to control DC motors and stepper motors, ensuring precise control and efficient operation of the motors, and is widely used in power tools and household appliances.
4. **LED driver**: In LED lighting applications, MTD3055T4G-VB can be used as a switching element to control the switching and dimming functions of LEDs. Its lower on-resistance can reduce energy loss and improve the efficiency and life of LED lighting systems.
5. **Audio amplifier**: In audio amplifier design, MTD3055T4G-VB can be used in power amplifier circuits to improve the processing capability of audio signals and ensure stability under high currents, which is very suitable for the needs of high-fidelity audio equipment.
In summary, MTD3055T4G-VB
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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