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MTD3055ET4G-VB Product details
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Product Introduction
**MTD3055ET4G-VB** is a high-performance N-channel MOSFET in TO252 package, designed for low voltage, high current applications. Its superior Trench technology achieves low on-resistance and efficient current control, making it perform well in various power management and switching circuits. The drain-source voltage (VDS) of this MOSFET is 60V, which is suitable for a variety of electrical equipment applications. The maximum leakage current can reach 18A, which can cope with high load requirements and is widely used in industrial and consumer electronics.
**MTD3055ET4G-VB** is a high-performance N-channel MOSFET in TO252 package, designed for low voltage, high current applications. Its superior Trench technology achieves low on-resistance and efficient current control, making it perform well in various power management and switching circuits. The drain-source voltage (VDS) of this MOSFET is 60V, which is suitable for a variety of electrical equipment applications. The maximum leakage current can reach 18A, which can cope with high load requirements and is widely used in industrial and consumer electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Model**: MTD3055ET4G-VB
- **Package**: TO252
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 73mΩ @ VGS = 10V
- **Drain current (ID)**: 18A
- **Technology**: Trench
- **Model**: MTD3055ET4G-VB
- **Package**: TO252
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 73mΩ @ VGS = 10V
- **Drain current (ID)**: 18A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **Power converter**:
MTD3055ET4G-VB is commonly used in switching power supplies (SMPS) and DC-DC converters. As an efficient switching device, it can provide stable power output and efficient energy conversion. Its low on-resistance can reduce energy loss and improve overall efficiency.
2. **Motor drive**:
This MOSFET performs well in motor control circuits and is suitable for driving various DC motors and stepper motors. Due to its high current handling capability and fast switching characteristics, it can effectively control the operating state of the motor and improve the response speed of the system.
3. **Lighting control**:
In LED lighting drive applications, MTD3055ET4G-VB can be used to control the switching state of LEDs and provide stable current, thereby achieving efficient lighting solutions for commercial and residential lighting systems.
4. **Consumer Electronics**:
Due to its compact package and high performance, this MOSFET is suitable for power management and switch control circuits in portable devices and consumer electronics, improving the energy efficiency and operating stability of the equipment.
5. **Battery Management System**:
MTD3055ET4G-VB can also be applied to battery management systems, especially in electric vehicles and energy storage devices, responsible for battery charge and discharge control, ensuring the safety and efficient operation of the system.
The superior performance and diverse application scenarios of MTD3055ET4G-VB make it an indispensable component in modern electronic design.
1. **Power converter**:
MTD3055ET4G-VB is commonly used in switching power supplies (SMPS) and DC-DC converters. As an efficient switching device, it can provide stable power output and efficient energy conversion. Its low on-resistance can reduce energy loss and improve overall efficiency.
2. **Motor drive**:
This MOSFET performs well in motor control circuits and is suitable for driving various DC motors and stepper motors. Due to its high current handling capability and fast switching characteristics, it can effectively control the operating state of the motor and improve the response speed of the system.
3. **Lighting control**:
In LED lighting drive applications, MTD3055ET4G-VB can be used to control the switching state of LEDs and provide stable current, thereby achieving efficient lighting solutions for commercial and residential lighting systems.
4. **Consumer Electronics**:
Due to its compact package and high performance, this MOSFET is suitable for power management and switch control circuits in portable devices and consumer electronics, improving the energy efficiency and operating stability of the equipment.
5. **Battery Management System**:
MTD3055ET4G-VB can also be applied to battery management systems, especially in electric vehicles and energy storage devices, responsible for battery charge and discharge control, ensuring the safety and efficient operation of the system.
The superior performance and diverse application scenarios of MTD3055ET4G-VB make it an indispensable component in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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