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MTD2N50E-VB Product details
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MTD2N50E-VB Product Introduction
The MTD2N50E-VB is a high-performance single N-channel power MOSFET in a TO252 package designed for high voltage and high current applications. The device's drain-source voltage (VDS) can reach 650V, enabling it to handle power management and switching requirements in high voltage environments. Its gate-source voltage (VGS) can reach ±30V, ensuring good switching performance. The threshold voltage (Vth) of the MTD2N50E-VB is 3.5V, enabling fast switching action at appropriate drive voltages. Its on-resistance (RDS(ON)) is 2750mΩ at 4.5V and 2200mΩ at 10V, providing relatively low conduction losses, thereby improving overall energy efficiency.
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The MTD2N50E-VB is a high-performance single N-channel power MOSFET in a TO252 package designed for high voltage and high current applications. The device's drain-source voltage (VDS) can reach 650V, enabling it to handle power management and switching requirements in high voltage environments. Its gate-source voltage (VGS) can reach ±30V, ensuring good switching performance. The threshold voltage (Vth) of the MTD2N50E-VB is 3.5V, enabling fast switching action at appropriate drive voltages. Its on-resistance (RDS(ON)) is 2750mΩ at 4.5V and 2200mΩ at 10V, providing relatively low conduction losses, thereby improving overall energy efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | 2200mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
| **Parameter** | **Specification** |
|--------------------------|-------------------------------|
| **Model** | MTD2N50E-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-Source Voltage (VDS)** | 650V |
| **Gate-Source Voltage (VGS)** | ±30V |
| **Threshold Voltage (Vth)** | 3.5V |
| **On-Resistance (RDS(ON))** | 2750mΩ @ VGS=4.5V |
| | 2200mΩ @ VGS=10V |
| **Drain Current (ID)** | 4A |
| **Technology** | Plannar |
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| **Parameter** | **Specification** |
|--------------------------|-------------------------------|
| **Model** | MTD2N50E-VB |
| **Package** | TO252 |
| **Configuration** | Single N-channel|
| **Drain-Source Voltage (VDS)** | 650V |
| **Gate-Source Voltage (VGS)** | ±30V |
| **Threshold Voltage (Vth)** | 3.5V |
| **On-Resistance (RDS(ON))** | 2750mΩ @ VGS=4.5V |
| | 2200mΩ @ VGS=10V |
| **Drain Current (ID)** | 4A |
| **Technology** | Plannar |
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Domain and module applications：
Application fields and module examples
**MTD2N50E-VB** performs well in many fields and modules, as shown below:
1. **High-voltage switching power supply**
- This MOSFET can be used in high-voltage switching power supply design, which can effectively handle high voltage conversion in the power supply, suitable for industrial power supply and power adapter, providing stable voltage output and high efficiency.
2. **Motor drive**
- In motor control applications, MTD2N50E-VB can efficiently drive various types of motors, suitable for power tools and home appliances, etc., providing stable current output to meet high power requirements.
3. **Inverter**
- This MOSFET can be used in inverter circuits, especially in renewable energy systems, such as solar inverters, to efficiently convert and manage energy and improve the overall efficiency of the system.
4. **Battery Management System (BMS)**
- In the battery management system, the MTD2N50E-VB can optimize the battery charging and discharging process, especially in high-voltage battery packs, ensuring battery safety and high efficiency, suitable for electric vehicles and energy storage systems.
5. **LED Driver**
- The device is also suitable for LED driver circuits, which can stably control the current of LED modules, ensure uniform brightness and extend the service life of LEDs, and is widely used in commercial lighting and indoor lighting.
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Through its excellent performance and wide applicability, the MTD2N50E-VB has become an important component in modern high-voltage electronic design and is widely used in various power supplies and drive systems.
**MTD2N50E-VB** performs well in many fields and modules, as shown below:
1. **High-voltage switching power supply**
- This MOSFET can be used in high-voltage switching power supply design, which can effectively handle high voltage conversion in the power supply, suitable for industrial power supply and power adapter, providing stable voltage output and high efficiency.
2. **Motor drive**
- In motor control applications, MTD2N50E-VB can efficiently drive various types of motors, suitable for power tools and home appliances, etc., providing stable current output to meet high power requirements.
3. **Inverter**
- This MOSFET can be used in inverter circuits, especially in renewable energy systems, such as solar inverters, to efficiently convert and manage energy and improve the overall efficiency of the system.
4. **Battery Management System (BMS)**
- In the battery management system, the MTD2N50E-VB can optimize the battery charging and discharging process, especially in high-voltage battery packs, ensuring battery safety and high efficiency, suitable for electric vehicles and energy storage systems.
5. **LED Driver**
- The device is also suitable for LED driver circuits, which can stably control the current of LED modules, ensure uniform brightness and extend the service life of LEDs, and is widely used in commercial lighting and indoor lighting.
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Through its excellent performance and wide applicability, the MTD2N50E-VB has become an important component in modern high-voltage electronic design and is widely used in various power supplies and drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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